R5011ANX MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: R5011ANX

Type of R5011ANX transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 11

Maximum junction temperature (Tj), °C: 150

Rise Time of R5011ANX transistor (tr), nS: 28nS

Drain-source Capacitance (Cd), pF: 400

Maximum drain-source on-state resistance (Rds), Ohm: 0.38

Package: TO220FM

Equivalent transistors for R5011ANX

R5011ANX PDF documents for downloads:

1.1. r5011anx.pdf Size:232K _rohm

R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX Dimensions (Unit : mm) Structure Silicon N-channel MOSFET TO-220FM 10.0 ?3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Fast switching speed. 1.3 3) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8 (1)Base 4) Drive circuits can be simple. 2.54 2.54 0.75 2.6 (2)Collector (1) (2) (3) 5) Parallel use is easy. (3)Emitter Applications Switching Packaging specifications Inner circuit Package Bulk Type Code - Basic ordering unit (pieces) 500 ?1 R5011ANX Absolute maximum ratings (Ta=25 C) (1) (2) (3) Parameter Symbol Limits Unit (1) Gate (2) Drain Drain-source voltage VDSS 500 V ?1 Body Diode (3) Source Gate-source voltage VGSS ±30 V ?3 Continuous ID ±11 A Drain current ?1 Pulsed IDP ±44 A ?3 Continuous IS 11 A Source current ?1 (Body Diode) Pulsed ISP 44 A ?2 Avalanche Current IAS 5.5 A ?2 Avalanche Energy EAS 8.1 mJ Total power dissipation (Tc=25°C

3.1. r5011anj.pdf Size:263K _rohm

10V Drive Nch MOSFET R5011ANJ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Fast switching speed. 2.54 0.4 0.78 2.7 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 5.08 (1) Gate (1) (2) (3) 4) Drive circuits can be simple. (2) Drain (3) Source Each lead has same dimensions 5) Parallel use is easy. LPTL 8.9 4.8 Applications Switching (1) Gate (1) (2) (3) (2) Drain Each lead has same dimensions (3) Source Packaging specifications Inner circuit Package Taping LPTS TL Type Code ?1 LPTL TLL Basic ordering unit (pieces) 1000 (1) (2) (3) (1) Gate (2) Drain ?1 Body Diode (3) Source Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ?3 Continuous ID ±11 A Drain current ?1 Pulsed IDP ±44 A ?3 Continuous IS 11 A Source current ?1 (Body Diode) Pulsed ISP 44 A ?2 Avalanche

5.1. r5011fnx.pdf Size:283K _rohm

10V Drive Nch MOSFET R5011FNX Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TO-220FM 10.0 ?3.2 4.5 2.8 Features 1) Fast reverse recovery time. 2) Low on-resistance. 1.2 1.3 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 0.8 5) Drive circuits can be simple. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) 6) Parallel use is easy. (3) Source Applications Switching Inner circuit Packaging specifications Package Bulk ?1 Type Basic ordering unit (pieces) 500 R5011FNX (1) (2) (3) (1) Gate (2) Drain ?1 Body Diode (3) Source Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 500 V Gate-source voltage VGSS ±30 V ?3 Continuous ID ±11 A Drain current ?1 Pulsed IDP ±44 A ?3 Continuous IS 11 A Source current ?1 (Body Diode) Pulsed ISP 44 A ?2 Avalanche current IAS 5.5 A ?2 Avalanche energy EAS 8.1 mJ Total power dissipation (Tc=25°C) PD 50

See also transistors datasheet: R4008AND , R5005CNJ , R5007ANJ , R5007ANX , R5009ANJ , R5009ANX , R5009FNX , R5011ANJ , IRF640 , R5011FNX , R5013ANJ , R5013ANX , R5016ANJ , R5016ANX , R5016FNX , R5019ANJ , R5019ANX .

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