RCX080N25 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RCX080N25

Type of RCX080N25 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 250V

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 150

Rise Time of RCX080N25 transistor (tr), nS: 28nS

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 0.46

Package: TO220FM

Equivalent transistors for RCX080N25

RCX080N25 PDF documents for downloads:

1.1. rcx080n25.pdf Size:1211K _rohm

Data Sheet 10V Drive Nch MOSFET RCX080N25 ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) High ESD. 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) ? Application Switching ? Packaging specifications ? Inner circuit Package Bulk Type Code - ?1 Basic ordering unit (pieces) 500 RCX080N25 ? (1) Gate (1) (2) (3) (2) Drain ? Absolute maximum ratings (Ta = 25?C) (3) Source ?1 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage VDSS 250 V Gate-source voltage VGSS ?30 V Continuous ID *3 ?8A Drain current *1,3 Pulsed IDP ?32 A Continuous IS 8A Source current (Body Diode) *1 Pulsed ISP 32 A *2 Avalanche current IAS 4A Avalanche energy EAS *2 4.66 mJ *4 Power dissipation PD 35 W Channel temperature Tch 150 ?C Range of storage temperature Tstg ?55 to ?150 ?C *1 Pw?10?s, Duty cycle?1% *2 L 500?H, VDD=50V, RG=25?, Tch=25?C *3 Limited only by max

2.1. rcx080n20.pdf Size:1119K _rohm

Data Sheet 10V Drive Nch MOSFET RCX080N20 ? Structure ? Dimensions (Unit : mm) TO-220FM Silicon N-channel MOSFET 10.0 ?3.2 4.5 2.8 ?Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) ? Application Switching ? Packaging specifications ? Inner circuit Package Bulk Type Code - ?1 Basic ordering unit (pieces) 500 RCX080N20 ? (1) Gate (2) Drain (1) (2) (3) ? Absolute maximum ratings (Ta = 25?C) (3) Source ?1 BODY DIODE Parameter Symbol Limits Unit Drain-source voltage VDSS 200 V Gate-source voltage VGSS ?30 V Continuous ID *3 ?8A Drain current Pulsed IDP *1 ?32 A Continuous IS 8A Source current (Body Diode) Pulsed ISP *1 32 A Avalanche current IAS *2 4.0 A Avalanche energy EAS *2 5.17 mJ *4 Power dissipation PD 40 W Channel temperature Tch 150 ?C Range of storage temperature Tstg ?55 to ?150 ?C *1 Pw?10?s, Duty cycle?1% *2 L 500?H, VDD=50V, RG=25?, Tch=25°C *3 Limited only by maxi

See also transistors datasheet: RCD060N25 , RCD075N20 , RCD080N25 , RCD100N20 , RCJ330N25 , RCJ450N20 , RCX050N25 , RCX080N20 , BUZ90A , RCX120N20 , RCX120N25 , RCX160N20 , RCX330N25 , RCX450N20 , RHK005N03 , RHP020N06 , RHP030N03 .

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