RSJ10HN06 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RSJ10HN06

Type of RSJ10HN06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), °C: 150

Rise Time of RSJ10HN06 transistor (tr), nS: 470nS

Drain-source Capacitance (Cd), pF: 2000

Maximum drain-source on-state resistance (Rds), Ohm: 0.003

Package: LPTS

Equivalent transistors for RSJ10HN06

RSJ10HN06 PDF documents for downloads:

1.1. rsj10hn06.pdf Size:1245K _rohm

Data Sheet 4V Drive Nch MOSFET RSJ10HN06 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 ?Features 1.24 1) Low on-resistance. 2) Built-in G-S Protection Diode. 2.54 0.4 0.78 3) High power Package 2.7 5.08 (1) (2) (3) ? Application Switching ? Packaging specifications ? Inner circuit ?1 Package Taping Type Code TL Basic ordering unit (pieces) 1000 ?2 RSJ10HN06 ? (1) (2) (3) (1) Gate ?1 ESD PROTECTION DIODE (2) Drain ?2 BODY DIODE (3) Source ?Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ?20 V Continuous ID *3 ?100 A Drain current Pulsed IDP *1 ?200 A Continuous IS *3 100 A Source current (Body Diode) Pulsed ISP *1 200 A Power dissipation PD *2 100 W Channel temperature Tch 150 ?C Range of storage temperature Tstg ?55 to ?150 ?C *1 Pw?10?s, Duty cycle?1% *2 TC=25?C *3 Limited only by maximum channel temperature allowed. ? Thermal r

See also transistors datasheet: RSE002N06 , RSE002P03 , RSF010P05 , RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , BF961 , RSJ250P10 , RSJ300N10 , RSJ400N06 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 .

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