RSQ020N03 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RSQ020N03

Type of RSQ020N03 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.25

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 2

Maximum junction temperature (Tj), °C: 150

Rise Time of RSQ020N03 transistor (tr), nS: 9nS

Drain-source Capacitance (Cd), pF: 40

Maximum drain-source on-state resistance (Rds), Ohm: 0.096

Package: TSMT6

Equivalent transistors for RSQ020N03

RSQ020N03 PDF documents for downloads:

1.1. rsq020n03.pdf Size:65K _rohm

RSQ020N03 Transistors 4V Drive Nch MOSFET RSQ020N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0~0.1 (1) (2) (3) 1pin mark 0.16 0.4 Applications Each lead has same dimensions Switching Abbreviated symbol : QQ Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code TR Basic ordering unit (pieces) 3000 ?2 RSQ020N03 ?1 (1) Drain (2) Drain (3) Gate (1) (2) (3) (4) Source (5) Drain ?1 ESD PROTECTION DIODE (6) Drain ?2 BODY DIODE Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-source voltage V 30 V DSS Gate-source voltage V 20 V GSS Continuous I ±2.0 A D Drain current ?1 Pulsed IDP ±8.0 A Source current Continuous I 1.0 A S (Body diode) ?1 Pulsed I 8.0 A SP ?2 Total power dissipation P 1.25 W D Channel temperature Tch 150

See also transistors datasheet: RSJ400N06 , RSJ450N04 , RSJ550N10 , RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , IRF9540 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 .

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