F5017H MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: F5017H

Type of F5017H transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C: 150

Rise Time of F5017H transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.16

Package: TO220F5

Equivalent transistors for F5017H

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See also transistors datasheet: C2T225A , DM601 , DM616 , ECG221 , ECG454 , ECG455 , F5001H , F5016H , IRF840 , F5018 , F5019 , F5020 , F5021H , F5022 , F5023 , F5026 , F5027 .

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