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SJV01N60 MOSFET (IC) Datasheet. Cross Reference Search. SJV01N60 Equivalent

Type Designator: SJV01N60

Type of SJV01N60 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.625

Maximum drain-source voltage |Uds|, V: 600

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 1

Maximum junction temperature (Tj), °C: 150

Rise Time of SJV01N60 transistor (tr), nS: 21

Drain-source Capacitance (Cd), pF: 28

Maximum drain-source on-state resistance (Rds), Ohm: 0.01

Package: TO92

SJV01N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SJV01N60 PDF doc:

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SJV01N60
SJV01N60

SJV01N60 1A , 600V , RDS(ON) 10 m? ? ? ? N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced A D termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, B this a

See also transistors datasheet: SID05N10 , SID10N30-600I , SID20N06-90I , SID3055 , SID40N03 , SID9435 , SID9575 , SID9971 , IRF840 , SMG1330N , SMG2301 , SMG2301P , SMG2302 , SMG2302N , SMG2305 , SMG2305P , SMG2305PE .

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