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CEP16N10 MOSFET (IC) Datasheet. Cross Reference Search. CEP16N10 Equivalent

Type Designator: CEP16N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 60

Maximum Drain-Source Voltage |Vds|, V: 100

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 15.2

Maximum Junction Temperature (Tj), °C: 175

Rise Time (tr), nS: 3

Drain-Source Capacitance (Cd), pF: 105

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.12

Package: TO220

CEP16N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEP16N10 PDF doc:

1.1. cep16n10_ceb16n10.pdf Size:534K _cet

CEP16N10
CEP16N10

CEP16N10/CEB16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 120m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Par

1.2. cep16n10l_ceb16n10l.pdf Size:645K _cet

CEP16N10
CEP16N10

CEP16N10L/CEB16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 15.2A, RDS(ON) = 115m? @VGS = 10V. RDS(ON) = 125m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM R

See also transistors datasheet: CEP15A03 , CEB14A04 , CEP14A04 , CEB140N10 , CEP140N10 , CEB16N10L , CEP16N10L , CEB16N10 , IRFP260N , CEB13N10L , CEP13N10L , CEB13N10 , CEP13N10 , CEB14N5 , CEF14N5 , CEP14N5 , CEB13N5 .

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