All MOSFET. CEUF640 Datasheet

 

CEUF640 MOSFET. Datasheet pdf. Equivalent

Type Designator: CEUF640

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 355 pF

Maximum Drain-Source On-State Resistance (Rds): 0.15 Ohm

Package: TO252

CEUF640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEUF640 PDF doc:

1.1. ceuf640_cedf640.pdf Size:368K _cet

CEUF640
CEUF640

CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 ? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwis

5.1. ceuf634_cedf634.pdf Size:390K _cet

CEUF640
CEUF640

CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) S TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

Datasheet: CEU830G , CEU83A3 , CEU83A3G , CEU840A , CEU84A4 , CEU85A3 , CEU93A3 , CEUF634 , 2N7000 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A , CED84A4 .

 


CEUF640
  CEUF640
  CEUF640
  CEUF640
 
CEUF640
  CEUF640
  CEUF640
  CEUF640
 

social 

LIST

Last Update

MOSFET: 2SK642 | 2SK641 | SVF2N60D | SVF2N60T | SVF2N60F | SVF2N60M | FQP630 | FMR23N50E | FMV23N50E | FMH23N50E | STK0460F | UTC50N06L | TSP8N60M | TSF8N60M | STK630F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers