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CEUF640 MOSFET (IC) Datasheet. Cross Reference Search. CEUF640 Equivalent

Type Designator: CEUF640

Type of CEUF640 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 15

Maximum junction temperature (Tj), °C: 150

Rise Time of CEUF640 transistor (tr), nS: 5

Drain-source Capacitance (Cd), pF: 355

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: TO252

CEUF640 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEUF640 PDF doc:

1.1. ceuf640_cedf640.pdf Size:368K _cet

CEUF640
CEUF640

CEDF640/CEUF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 15A, RDS(ON) = 0.15 ? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwis

5.1. ceuf634_cedf634.pdf Size:390K _cet

CEUF640
CEUF640

CEDF634/CEUF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES 250V, 6.7A, RDS(ON) = 450m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) S TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

See also transistors datasheet: CEU830G , CEU83A3 , CEU83A3G , CEU840A , CEU84A4 , CEU85A3 , CEU93A3 , CEUF634 , 2N7000 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A , CED84A4 .

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 CEUF640 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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