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KF4N65P MOSFET (IC) Datasheet. Cross Reference Search. KF4N65P Equivalent

Type Designator: KF4N65P

Type of KF4N65P transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 83.3

Maximum drain-source voltage |Uds|, V: 650

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 3.6

Maximum junction temperature (Tj), °C: 150

Rise Time of KF4N65P transistor (tr), nS: 15

Drain-source Capacitance (Cd), pF: 60

Maximum drain-source on-state resistance (Rds), Ohm: 2.1

Package: TO220AB

KF4N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

KF4N65P PDF doc:

1.1. kf4n65p_f.pdf Size:414K _kec

KF4N65P
KF4N65P

KF4N65P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF4N65P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supplies.

See also transistors datasheet: KF3N60F , KF3N60I , KF3N60P , KF3N80F , KF4N20LD , KF4N20LI , KF4N20LW , KF4N65F , 2N3824 , KF4N80F , KF5N50D , KF5N50DS , KF5N50DZ , KF5N50F , KF5N50FS , KF5N50FSA , KF5N50FZ .

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