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FDS4435 MOSFET (IC) Datasheet. Cross Reference Search. FDS4435 Equivalent

Type Designator: FDS4435

Type of FDS4435 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2.5

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8.8

Maximum junction temperature (Tj), °C: 150

Rise Time of FDS4435 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.02

Package: SO8

FDS4435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDS4435 PDF doc:

1.1. fds4435bz.pdf Size:225K _fairchild_semi

FDS4435
FDS4435

April 2009 FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize the

1.2. fds4435bz_f085.pdf Size:296K _fairchild_semi

FDS4435
FDS4435

July 2009 FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m Features General Description Max rDS(on) = 20m at VGS = -10V, ID = -8.8A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 35m at VGS = -4.5V, ID = -6.7A Semiconductor’s advanced PowerTrench® process that has Extended VGSS range (-25V) for battery applications been especially tailored to minimize

1.3. fds4435.pdf Size:64K _fairchild_semi

FDS4435
FDS4435

October 2001 FDS4435 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel • –8.8 A, –30 V R = 20 m? @ V = –10 V DS(ON) GS Fairchild Semiconductor’s advanced PowerTrench R = 35 m? @ V = –4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave drive • Low gate

1.4. fds4435a.pdf Size:172K _fairchild_semi

FDS4435
FDS4435

October 2001 FDS4435A P-Channel Logic Level PowerTrench? MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using • -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 V Fairchild Semiconductor’s advanced PowerTrench process RDS(ON) = 0.025 W @ VGS = -4.5 V that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for sup

See also transistors datasheet: FDR836P , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , IRFB3306 , FDS4435A , FDS4953 , FDS5680 , FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 .

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