FK10SM-12 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FK10SM-12

Type of FK10SM-12 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 600V

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of FK10SM-12 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 1.18

Package: TO3P

Equivalent transistors for FK10SM-12

FK10SM-12 PDF documents for downloads:

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See also transistors datasheet: FDV301N , FDV302P , FDV303N , FDV304P , FK10KM-10 , FK10KM-12 , FK10KM-9 , FK10SM-10 , IRF250 , FK10SM-9 , FK10UM-10 , FK10UM-12 , FK10UM-9 , FK10VS-10 , FK10VS-12 , FK10VS-9 , FK14KM-10 .

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