All MOSFET. 2SK373 Datasheet

 

2SK373 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK373

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.4 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 3.5 V

Maximum Drain Current |Id|: 0.0065 A

Maximum Junction Temperature (Tj): 125 °C

Maximum Drain-Source On-State Resistance (Rds): 700 Ohm

Package: TO92_SC43

2SK373 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK373 PDF doc:

1.1. 2sk373.pdf Size:313K _toshiba

2SK373
2SK373

2SK373 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK373 For Audio, High Voltage Amplifier and Constant Current Unit: mm Applications High breakdown voltage: VGDS = -100 V (min) High input impedance: I = -1.0 nA (max) (V = -80 V) GSS GS Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Gate-drain voltage VGDS -100 V Gate current

1.2. rej03g0525_2sk3736ds.pdf Size:98K _renesas

2SK373
2SK373

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.3. 2sk3736.pdf Size:85K _renesas

2SK373
2SK373

2SK3736 Silicon N Channel MOS FET Power Switching REJ03G0525-0200 Rev.2.00 Jul 27, 2006 Features Capable of 2.5 V gate drive Low drive current Low on-resistance Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source

Datasheet: 2SK3614 , 2SK3656 , 2SK3663 , 2SK3664 , 2SK3668 , 2SK367 , 2SK368 , 2SK3702 , RFP50N06 , 2SK374 , 2SK3740 , 2SK3743 , 2SK3749 , 2SK3756 , 2SK375L , 2SK375S , 2SK3761 .

 


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