MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
AP4228GM All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

AP4228GM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: AP4228GM

Type of AP4228GM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.8

Maximum junction temperature (Tj), °C: 150

Rise Time of AP4228GM transistor (tr), nS: 8

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 0.026

Package: SO-8

Equivalent transistors for AP4228GM

AP4228GM PDF doc:

1.1. ap4228gm.pdf Size:227K _a-power

AP4228GM
AP4228GM
AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 26m? D1 Ў Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1 S2 ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TA=25? Continuous Drain Current3 6.8 A ID@TA=70? Continuous Drain Current3 5.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.1. ap4226gm.pdf Size:71K _a-power

AP4228GM
AP4228GM
AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TA=25? Continuous Drain Current3 8.2 A ID@TA=70? Continuous Drain Current3 6.7 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-a

5.2. ap4224agm.pdf Size:93K _a-power

AP4228GM
AP4228GM
AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 15m? D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 9.2 A ID@TA=70? Continuous Drain Current3 7.3 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 62.5 ?/W Data and specifications subject to change without notice 1 200902241

5.3. ap4224lgm-hf-pre.pdf Size:74K _a-power

AP4228GM
AP4228GM
AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 14m? D1 Ў Dual N MOSFET Package ID 10A G2 S2 Ў RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 The SO-8 package is widely preferred for commercial-industrial G1 surface mount applications and suited for low voltage applications S1 S2 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction

5.4. ap4224gm.pdf Size:96K _a-power

AP4228GM
AP4228GM
AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 14m? D1 D1 Ў Dual N MOSFET Package ID 10A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 62.5 ?/W

5.5. ap4226bgm-hf.pdf Size:98K _a-power

AP4228GM
AP4228GM
AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G2 G1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications S2 S1 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3, VGS @ 10V 10.7 A ID@TA=70? Continuous Drain Current3, VGS @ 10V 8.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Ran

5.6. ap4226agm.pdf Size:206K _a-power

AP4228GM
AP4228GM
AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G2 G1 cost-effectiveness. S1 S2 The SO-8 package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 8.7 A ID@TA=70? Continuous Drain Current3 7 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

See also transistors datasheet: AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , AP4226GM , 2SK2837 , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP .

Keywords

 AP4228GM Datasheet  AP4228GM Datenblatt  AP4228GM RoHS  AP4228GM Distributor
 AP4228GM Application Notes  AP4228GM Component  AP4228GM Circuit  AP4228GM Schematic
 AP4228GM Equivalent  AP4228GM Cross Reference  AP4228GM Data Sheet  AP4228GM Fiche Technique

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