MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
AP4228GM
  AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
  AP4228GM
  AP4228GM
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306N
SMG2306NE ..SML40J53
SML40J93 ..SPA08N50C3
SPA08N80C3 ..SSD9973
SSDF9504 ..SSM3J16FV
SSM3J16TE ..SSM6N7002FU
SSM6P05FU ..STB190NF04
STB19NF20 ..STD3LN62K3
STD3N25-1 ..STF25NM60ND
STF26NM60N ..STK830F
STK830P ..STP14NF12FP
STP14NK50Z ..STP5N30L
STP5N30LFI ..STS4DNF60L
STS4DNFS30L ..STU612D
STU616S ..TF252
TF252TH ..TK80F08K3
TK80S04K3L ..TPCA8045-H
TPCA8046-H ..UP2003
UP672 ..WTC2302
WTC2305 ..ZXMP10A13F
ZXMP10A16K ..ZXMS6006SG
 
AP4228GM All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

AP4228GM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: AP4228GM

Type of AP4228GM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.8

Maximum junction temperature (Tj), °C: 150

Rise Time of AP4228GM transistor (tr), nS: 8

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 0.026

Package: SO-8

Equivalent transistors for AP4228GM - Cross-Reference Search

AP4228GM PDF doc:

1.1. ap4228gm.pdf Size:227K _a-power

AP4228GM
AP4228GM
AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 26m? D1 Ў Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1 S2 ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TA=25? Continuous Drain Current3 6.8 A ID@TA=70? Continuous Drain Current3 5.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.1. ap4226gm.pdf Size:71K _a-power

AP4228GM
AP4228GM
AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TA=25? Continuous Drain Current3 8.2 A ID@TA=70? Continuous Drain Current3 6.7 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-a

5.2. ap4224agm.pdf Size:93K _a-power

AP4228GM
AP4228GM
AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 15m? D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 9.2 A ID@TA=70? Continuous Drain Current3 7.3 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 62.5 ?/W Data and specifications subject to change without notice 1 200902241

5.3. ap4224lgm-hf-pre.pdf Size:74K _a-power

AP4228GM
AP4228GM
AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 14m? D1 Ў Dual N MOSFET Package ID 10A G2 S2 Ў RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 The SO-8 package is widely preferred for commercial-industrial G1 surface mount applications and suited for low voltage applications S1 S2 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction

5.4. ap4224gm.pdf Size:96K _a-power

AP4228GM
AP4228GM
AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 14m? D1 D1 Ў Dual N MOSFET Package ID 10A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 62.5 ?/W

5.5. ap4226bgm-hf.pdf Size:98K _a-power

AP4228GM
AP4228GM
AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G2 G1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications S2 S1 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3, VGS @ 10V 10.7 A ID@TA=70? Continuous Drain Current3, VGS @ 10V 8.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Ran

5.6. ap4226agm.pdf Size:206K _a-power

AP4228GM
AP4228GM
AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G2 G1 cost-effectiveness. S1 S2 The SO-8 package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 8.7 A ID@TA=70? Continuous Drain Current3 7 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

See also transistors datasheet: AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , AP4226GM , 2SK2837 , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP .

Keywords

 AP4228GM Datasheet  AP4228GM Datenblatt  AP4228GM RoHS  AP4228GM Distributor
 AP4228GM Application Notes  AP4228GM Component  AP4228GM Circuit  AP4228GM Schematic
 AP4228GM Equivalent  AP4228GM Cross Reference  AP4228GM Data Sheet  AP4228GM Fiche Technique

 

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