MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..ZVN0545G
ZVN1409A ..ZXMS6004FF
ZXMS6004SG ..ZXMS6006SG
 
AP4228GM All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

AP4228GM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: AP4228GM

Type of AP4228GM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.8

Maximum junction temperature (Tj), °C: 150

Rise Time of AP4228GM transistor (tr), nS: 8

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 0.026

Package: SO-8

Equivalent transistors for AP4228GM

AP4228GM PDF doc:

1.1. ap4228gm.pdf Size:227K _a-power

AP4228GM
AP4228GM
AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 26m? D1 Ў Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1 S2 ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TA=25? Continuous Drain Current3 6.8 A ID@TA=70? Continuous Drain Current3 5.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.1. ap4224agm.pdf Size:93K _a-power

AP4228GM
AP4228GM
AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 15m? D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 9.2 A ID@TA=70? Continuous Drain Current3 7.3 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 62.5 ?/W Data and specifications subject to change without notice 1 200902241

5.2. ap4226agm.pdf Size:206K _a-power

AP4228GM
AP4228GM
AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G2 G1 cost-effectiveness. S1 S2 The SO-8 package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 8.7 A ID@TA=70? Continuous Drain Current3 7 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.3. ap4226gm.pdf Size:71K _a-power

AP4228GM
AP4228GM
AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TA=25? Continuous Drain Current3 8.2 A ID@TA=70? Continuous Drain Current3 6.7 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-a

5.4. ap4226bgm-hf.pdf Size:98K _a-power

AP4228GM
AP4228GM
AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G2 G1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications S2 S1 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3, VGS @ 10V 10.7 A ID@TA=70? Continuous Drain Current3, VGS @ 10V 8.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Ran

5.5. ap4224gm.pdf Size:96K _a-power

AP4228GM
AP4228GM
AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 14m? D1 D1 Ў Dual N MOSFET Package ID 10A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 62.5 ?/W

5.6. ap4224lgm-hf-pre.pdf Size:74K _a-power

AP4228GM
AP4228GM
AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 14m? D1 Ў Dual N MOSFET Package ID 10A G2 S2 Ў RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 The SO-8 package is widely preferred for commercial-industrial G1 surface mount applications and suited for low voltage applications S1 S2 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction

See also transistors datasheet: AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , AP4226GM , 2SK2837 , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP .

Keywords

 AP4228GM Datasheet  AP4228GM Datenblatt  AP4228GM RoHS  AP4228GM Distributor
 AP4228GM Application Notes  AP4228GM Component  AP4228GM Circuit  AP4228GM Schematic
 AP4228GM Equivalent  AP4228GM Cross Reference  AP4228GM Data Sheet  AP4228GM Fiche Technique

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