MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK652R6-40C
BUK653R2-55C ..BUK9212-55B
BUK9213-30A ..BUZ46
BUZ50A ..CED16N10L
CED20P06 ..CEP02N6A
CEP02N6G ..CPH3350
CPH3351 ..DMP2104LP
DMP2104V ..FCPF7N60NT
FCPF7N60NT ..FDD18N20LZ
FDD18N20LZ ..FDMA291P
FDMA3023PZ ..FDMS86105
FDMS86105 ..FDPF5N60NZ
FDPF5N60NZ ..FDS8958B
FDS8978 ..FQB22P10TM_F085
FQB25N33TM_F085 ..FQP9N30
FQP9N90C ..FRL9230R
FRM130D ..GWM160-0055X1-SL
GWM160-0055X1-SL ..HAT1046R
HAT1047R ..HEPF2004
HEPF2007A ..IPA057N06N3G
IPA057N08N3G ..IPB80N04S2L-03
IPB80N04S3-03 ..IPI100N10S3-05
IPI100P03P3L-04 ..IPP60R199CP
IPP60R250CP ..IRF1010NS
IRF1010Z ..IRF610A
IRF610S ..IRF7326D2
IRF7328 ..IRF840I
IRF840S ..IRFBL10N60A
IRFBL12N50A ..IRFL1006
IRFL110 ..IRFPF50
IRFPG30 ..IRFS510A
IRFS520 ..IRFU2905Z
IRFU310 ..IRL3705Z
IRL3705ZL ..IRLR8726
IRLR8729 ..IXFE44N60
IXFE48N50Q ..IXFK230N20T
IXFK240N15T2 ..IXFN48N55
IXFN48N60P ..IXFT70N15
IXFT70N20Q3 ..IXTA152N085T7
IXTA15P15T ..IXTH220N055T
IXTH220N075T ..IXTN90N25L2
IXTN90P20P ..IXTQ40N50L2
IXTQ40N50Q ..IXTZ35N25MA
IXTZ35N25MB ..KMA2D4P20SA
KMA2D7DP20X ..KTK5132E
KTK5132S ..NDB4050L
NDB4060 ..NTD4815N
NTD4855N ..NTTFS5826NL
NTUD3127C ..PHX6ND50E
PHX7N60E ..PSMN2R6-40YS
PSMN2R7-30PL ..RFD7N10LE
RFD7N10LESM ..RJK1051DPB
RJK1052DPB ..RSD160P05
RSD175N10 ..SDF360JED
SDF3N90 ..SGSP319
SGSP321 ..SML1004RCN
SML1004RGN ..SMN03T80F
SMN03T80IS ..SSD12P10
SSD15N10 ..SSM3J05FU
SSM3J09FU ..SSM6L40TU
SSM6N04FU ..STB14NK60Z
STB14NM50N ..STD35NF3LL
STD38NH02L ..STF34NM60ND
STF35N65M5 ..STL60N32N3LL
STL60N3LLH5 ..STP36NF06L
STP38N06 ..STP9NK65ZFP
STP9NK70Z ..STW45NM60
STW45NM60D ..TK35S04K3L
TK3A60DA ..TPC8108
TPC8109 ..TPCP8206
TPCP8301 ..VMK90-02T2
VMM1500-0075X2 ..ZXMN3AMC
ZXMN3B01F ..ZXMS6006SG
 
AP4228GM All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

AP4228GM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: AP4228GM

Type of AP4228GM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.8

Maximum junction temperature (Tj), °C: 150

Rise Time of AP4228GM transistor (tr), nS: 8

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 0.026

Package: SO-8

Equivalent transistors for AP4228GM

AP4228GM PDF doc:

1.1. ap4228gm.pdf Size:227K _a-power

AP4228GM
AP4228GM
AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 26m? D1 Ў Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1 S2 ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TA=25? Continuous Drain Current3 6.8 A ID@TA=70? Continuous Drain Current3 5.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.1. ap4224agm.pdf Size:93K _a-power

AP4228GM
AP4228GM
AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 15m? D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 9.2 A ID@TA=70? Continuous Drain Current3 7.3 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 62.5 ?/W Data and specifications subject to change without notice 1 200902241

5.2. ap4226agm.pdf Size:206K _a-power

AP4228GM
AP4228GM
AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G2 G1 cost-effectiveness. S1 S2 The SO-8 package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 8.7 A ID@TA=70? Continuous Drain Current3 7 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.3. ap4226gm.pdf Size:71K _a-power

AP4228GM
AP4228GM
AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TA=25? Continuous Drain Current3 8.2 A ID@TA=70? Continuous Drain Current3 6.7 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-a

5.4. ap4226bgm-hf.pdf Size:98K _a-power

AP4228GM
AP4228GM
AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G2 G1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications S2 S1 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3, VGS @ 10V 10.7 A ID@TA=70? Continuous Drain Current3, VGS @ 10V 8.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Ran

5.5. ap4224gm.pdf Size:96K _a-power

AP4228GM
AP4228GM
AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 14m? D1 D1 Ў Dual N MOSFET Package ID 10A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 62.5 ?/W

5.6. ap4224lgm-hf-pre.pdf Size:74K _a-power

AP4228GM
AP4228GM
AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 14m? D1 Ў Dual N MOSFET Package ID 10A G2 S2 Ў RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 The SO-8 package is widely preferred for commercial-industrial G1 surface mount applications and suited for low voltage applications S1 S2 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction

See also transistors datasheet: AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , AP4226GM , 2SK2837 , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP .

Keywords

 AP4228GM Datasheet  AP4228GM Datenblatt  AP4228GM RoHS  AP4228GM Distributor
 AP4228GM Application Notes  AP4228GM Component  AP4228GM Circuit  AP4228GM Schematic
 AP4228GM Equivalent  AP4228GM Cross Reference  AP4228GM Data Sheet  AP4228GM Fiche Technique

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