MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
  AP4228GM
 
AP4228GM
  AP4228GM
 
 
List
03N06 ..2N5116
2N5196 ..2N6798
2N6798JANTX ..2N7272H3
2N7272H4 ..2SJ365
2SJ368 ..2SK1082
2SK1086 ..2SK1459LS
2SK146 ..2SK1888
2SK1889 ..2SK2333
2SK2339 ..2SK2706
2SK2707 ..2SK3067
2SK3068 ..2SK3467
2SK3469-01MR ..2SK4016
2SK4017 ..2SK901
2SK902 ..3SK180-6
3SK181 ..7N50
7N50A ..AO4842
AO4850 ..AOD4185
AOD4186 ..AON6298
AON6400 ..AOT254L
AOT25S65 ..AOWF2606
AOWF412 ..AP1RC03GMT-HF
AP20N15AGH-HF ..AP40T03GH
AP40T03GI ..AP60T03GH-HF
AP60T03GI ..AP9466GH
AP9466GJ ..AP9971GD
AP9971GH ..APM9410K
APM9424 ..APT20M38BVR
APT20M38SVR ..APT8015JVFR
APT8015JVR ..AUIRFR2607Z
AUIRFR2905Z ..BF904
BF904A ..BLF6G38S-25
BLF7G10L-250 ..BSB019N03LXG
BSB024N03LXG ..BSR92P
BSS100 ..BUK653R3-30C
BUK653R4-40C ..BUK9214-30A
BUK9215-55A ..BUZ50A-220M
BUZ50A-220SM ..CED16N10
CED16N10L ..CEP02N65G
CEP02N6A ..CL616BA
CLY2 ..DMN62D1SFB
DMN66D0LDW ..FCP110N65F
FCP11N60 ..FDC6302P
FDC6303N ..FDG6335N
FDG8842CZ ..FDMS3660AS
FDMS3660S ..FDP5680
FDP5690 ..FDS8449
FDS8449_F085 ..FQA44N30
FQA46N15 ..FQPF11N50CF
FQPF11P06 ..FRM9130R
FRM9140D ..FTD02N70
FTD04N60A ..H5N3003P
H5N3004P ..HAT2137H
HAT2139H ..HUF75545P3
HUF75545S3S ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF3305
IRF3315 ..IRF6621
IRF6622 ..IRF7495
IRF7501 ..IRF9633
IRF9640 ..IRFH5250D
IRFH5255 ..IRFP230
IRFP231 ..IRFR411
IRFR420 ..IRFS9133
IRFS9140 ..IRFW840A
IRFWZ14A ..IRLD024
IRLD110 ..IRLW540A
IRLW610A ..IXFH22N55
IXFH22N60P ..IXFK90N20
IXFK90N20Q ..IXFR15N100Q3
IXFR15N80Q ..IXFX170N20T
IXFX180N07 ..IXTA50N20P
IXTA50N25T ..IXTH50P085
IXTH50P10 ..IXTP24P085T
IXTP260N055T2 ..IXTT360N055T2
IXTT36N50P ..KF13N50F
KF13N50P ..KMC7D0CN20C
KMC7D0CN20CA ..LS3954
LS3954A ..MTB20P03L3
MTB22N04J3 ..MTN2302V3
MTN2304M3 ..MTP4411M3
MTP4411Q8 ..NTA7002N
NTB25P06 ..NTNUS3171PZ
NTP2955 ..P0903BEA
P0903BIS ..P45N03LTFG
P5002CDG ..PHB42N03LT
PHB44N06LT ..PMF3800SN
PMF400UN ..PSMN5R0-100PS
PSMN5R0-30YL ..RFD12N06RLE
RFD12N06RLESM ..RJK0454DPB
RJK0455DPB ..RQK0605JGDQA
RQK0606KGDQA ..SDF10N90
SDF11N100GAF ..SFR9220
SFR9224 ..SMG2301
SMG2301P ..SML4080CN
SML4080GN ..SPA03N60C3
SPA04N50C3 ..SSD40P04-20D
SSD40P04-20DE ..SSF4N60G
SSF4N80AS ..SSG4940NC
SSG4942N ..SSM3K36MFV
SSM3K36TU ..SSPL6005
SSPL6022 ..STB458D
STB45NF06 ..STD5N20T4
STD5N52K3 ..STF8N65M5
STF8NK100Z ..STL90N3LLH6
STL9N3LLH5 ..STP20N06
STP20N06FI ..STP656F
STP65NF06 ..STT03N20
STT04N20 ..STV55N05L
STV55N06L ..TK12A50D
TK12A53D ..TPC6109-H
TPC6110 ..TPCA8A02-H
TPCA8A04-H ..UT3404
UT3406 ..YW3407
ZDM4206N ..ZXMP6A18DN8
ZXMP6A18K ..ZXMS6006SG
 
AP4228GM MOSFET DataSheet. BJT, Power MOSFET, IGBT, IC Catalog
 

AP4228GM MOSFET (IC) Datasheet. Cross Reference Search. AP4228GM Equivalent

Type Designator: AP4228GM

Type of AP4228GM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.8

Maximum junction temperature (Tj), °C: 150

Rise Time of AP4228GM transistor (tr), nS: 8

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 0.026

Package: SO-8

Equivalent transistors for AP4228GM - Cross-Reference Search

 

AP4228GM PDF doc:

1.1. ap4228gm.pdf Size:227K _a-power

AP4228GM
AP4228GM
AP4228GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 26m? D1 Ў Fast Switching Characteristic ID 6.8A S2G2 G1 SO-8 S1 D2 D1 Description G2 G1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, S1 S2 ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage + 20 V ID@TA=25? Continuous Drain Current3 6.8 A ID@TA=70? Continuous Drain Current3 5.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.1. ap4226agm.pdf Size:206K _a-power

AP4228GM
AP4228GM
AP4226AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? D1 Ў Dual N MOSFET Package ID 8.7A G2 S2 G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and G2 G1 cost-effectiveness. S1 S2 The SO-8 package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 8.7 A ID@TA=70? Continuous Drain Current3 7 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junct

5.2. ap4226gm.pdf Size:71K _a-power

AP4228GM
AP4228GM
AP4226GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V Ў Ў Ў D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 18m? Ў Ў Ў D1 Ў Dual N MOSFET Package ID 8.2A Ў Ў Ў G2 S2 G1 SO-8 S1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device design, ultra low on-resistance and cost-effectiveness. S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ± 20 V ID@TA=25? Continuous Drain Current3 8.2 A ID@TA=70? Continuous Drain Current3 6.7 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-a

5.3. ap4226bgm-hf.pdf Size:98K _a-power

AP4228GM
AP4228GM
AP4226BGM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Lower On-resistance BVDSS 30V D2 D2 D1 Ў Simple Drive Requirement RDS(ON) 11m? D1 Ў Fast Switching Characteristic ID 10.7A G2 S2 Ў Halogen Free & RoHS Compliant G1 SO-8 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G2 G1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications S2 S1 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3, VGS @ 10V 10.7 A ID@TA=70? Continuous Drain Current3, VGS @ 10V 8.5 A IDM Pulsed Drain Current1 40 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Ran

5.4. ap4224lgm-hf-pre.pdf Size:74K _a-power

AP4228GM
AP4228GM
AP4224LGM-HF Preliminary Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 20V D2 D2 D1 Ў Capable of 2.5V Gate Drive RDS(ON) 14m? D1 Ў Dual N MOSFET Package ID 10A G2 S2 Ў RoHS Compliant & Halogen-Free G1 SO-8 S1 Description Advanced Power MOSFETs from APEC provide the designer D2 D1 with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 The SO-8 package is widely preferred for commercial-industrial G1 surface mount applications and suited for low voltage applications S1 S2 such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage +12 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction

5.5. ap4224gm.pdf Size:96K _a-power

AP4228GM
AP4228GM
AP4224GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 14m? D1 D1 Ў Dual N MOSFET Package ID 10A G2 Ў RoHS Compliant S2 G1 SO-8 S1 Description The Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25? Continuous Drain Current3 10 A ID@TA=70? Continuous Drain Current3 8 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W Linear Derating Factor 0.016 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Thermal Resistance Junction-ambient3 Max. 62.5 ?/W

5.6. ap4224agm.pdf Size:93K _a-power

AP4228GM
AP4228GM
AP4224AGM RoHS-compliant Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Ў Low On-Resistance BVDSS 30V D2 D2 Ў Simple Drive Requirement RDS(ON) 15m? D1 D1 ID 9.2A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TA=25? Continuous Drain Current3 9.2 A ID@TA=70? Continuous Drain Current3 7.3 A IDM Pulsed Drain Current1 30 A PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient3 62.5 ?/W Data and specifications subject to change without notice 1 200902241

See also transistors datasheet: AP40T10GP-HF , AP40T10GR , AP4224AGM , AP4224GM , AP4224LGM-HF , AP4226AGM , AP4226BGM-HF , AP4226GM , 2SK2837 , AP4230GM-HF , AP4232AGM , AP4232BGM-HF , AP4232GM-HF , AP42T03GP , AP4405GM , AP4407GM-HF , AP4407GP .

Keywords

 AP4228GM Datasheet  AP4228GM Design AP4228GM MOSFET AP4228GM Power
 AP4228GM RoHS Compliant AP4228GM Service AP4228GM Triacs AP4228GM Semiconductor
 AP4228GM Database AP4228GM Innovation AP4228GM IC AP4228GM Electricity

 

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages