All MOSFET Datasheet

 

2N6659-SM MOSFET (IC) Datasheet. Cross Reference Search. 2N6659-SM Equivalent

Type Designator: 2N6659-SM

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 6.25

Maximum Drain-Source Voltage |Vds|, V: 60

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 1.1

Maximum Junction Temperature (Tj), ¬įC: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 5

Package: TO220SM

2N6659-SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N6659-SM PDF doc:

4.1. 2n6659.pdf Size:18K _semelab

2N6659-SM
2N6659-SM

2N6659 MECHANICAL DATA Dimensions in mm (inches) NĖCHANNEL 8.89 (0.35) ENHANCEMENT MODE 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MOS TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) ē Switching Regulators dia. ē Converters 5.08 (0.200) typ. ē Motor Drivers 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.

5.1. 2n6383-85_2n6648-49_2n6650.pdf Size:146K _mospec

2N6659-SM
2N6659-SM

A A A

5.2. 2n6656-59_2n6660-61.pdf Size:42K _no

2N6659-SM
2N6659-SM

ÔĽŅ

5.3. 2n6653.pdf Size:11K _semelab

2N6659-SM
2N6659-SM

2N6653 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.4. 2n6655.pdf Size:11K _semelab

2N6659-SM
2N6659-SM

2N6655 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.5. 2n6654.pdf Size:12K _semelab

2N6659-SM
2N6659-SM

2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in acc

5.6. 2n6653.pdf Size:147K _jmnic

2N6659-SM
2N6659-SM

JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

5.7. 2n6654.pdf Size:147K _jmnic

2N6659-SM
2N6659-SM

JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION ·With TO-3 package ·High voltage capability ·Fast switching speeds ·Low saturation voltage APPLICATIONS ·Switcing regulators ·Inverters ·Solenoid and relay drivers ·Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3

5.8. 2n6653.pdf Size:116K _inchange_semiconductor

2N6659-SM
2N6659-SM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6653 MAXIMUN RA

5.9. 2n6654.pdf Size:116K _inchange_semiconductor

2N6659-SM
2N6659-SM

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6654 MAXIMUN RA

See also transistors datasheet: 2N5484 , 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , RFP50N06 , 2N6660 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M .

Search Terms:

 2N6659-SM - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


2N6659-SM
  2N6659-SM
  2N6659-SM
  2N6659-SM
 
2N6659-SM
  2N6659-SM
  2N6659-SM
  2N6659-SM
 

social 

LIST

Last Update

MOSFET: IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |

Enter a full or partial SMD code with a minimum of 2 letters or numbers