All MOSFET Datasheet

 

2SK3637 MOSFET (IC) Datasheet. Cross Reference Search. 2SK3637 Equivalent

Type Designator: 2SK3637

Type of 2SK3637 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 50

Maximum junction temperature (Tj), °C: 150

Rise Time of 2SK3637 transistor (tr), nS: 125

Drain-source Capacitance (Cd), pF: 750

Maximum drain-source on-state resistance (Rds), Ohm: 0.029

Package: TOP-3E-A1

2SK3637 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK3637 PDF doc:

1.1. 2sk3637.pdf Size:90K _panasonic

2SK3637
2SK3637

www.DataSheet4U.com Power MOSFETs 2SK3637 Silicon N-channel power MOSFET Unit: mm 15.5±0.5 3.0±0.3 ? 3.2±0.1 5? For PDP/For high-speed switching 5? ¦ Features • Low on-resistance, low Qg 5? • High avalanche resistance 5? (4.0) 5? 2.0±0.2 ¦ Absolute Maximum Ratings TC = 25°C 1.1±0.1 0.7±0.1 Parameter Symbol Rating Unit 5.45±0.3 Drain-source surrender voltage VDS

4.1. 2sk363.pdf Size:173K _toshiba

2SK3637
2SK3637

2SK363 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current Unit: mm and Impedance Converter Applications High breakdown voltage: VGDS = -40 V High input impedance: I = -1.0 nA (max) (V = -30 V) GSS GS Low R : R = 20 ? (typ.) (I = 15 mA) DS (ON) DS (ON) DSS Maximum Ratings (Ta = = 25C) = = Charac

4.2. 2sk3633.pdf Size:239K _toshiba

2SK3637
2SK3637

2SK3633 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (?-MOS IV) 2SK3633 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.35 ? (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 ?A (VDS = 640 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (T

4.3. 2sk113_2sk152_2sk363_2sj44_ifn113_ifn152_ifn363_ifp44.pdf Size:88K _interfet

2SK3637
2SK3637

Databook.fxp 1/13/99 2:09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V – 50 – 20 – 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS (– 20 V) (–10 V) (– 30 V) (

See also transistors datasheet: 2SK2352 , 2SK2655-01R , 2SK2872-01MR , 2SK3430 , 2SK3430-S , 2SK3430-Z , 2SK3523-01R , 2SK3525-01MR , IRF540N , 2SK4096LS , BUZ334 , 3N161 , 3N165 , 3N166 , 3SK199 , 3SK207 , 3SK225 .

Search Terms:

 2SK3637 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


2SK3637
  2SK3637
  2SK3637
  2SK3637
 
2SK3637
  2SK3637
  2SK3637
  2SK3637
 

social 

LIST

Last Update

MOSFET: 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H | RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers