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2N5461 MOSFET (IC) Datasheet. Cross Reference Search. 2N5461 Equivalent

Type Designator: 2N5461

Type of Transistor: JFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd), W: 0.35

Maximum Drain-Source Voltage |Vds|, V: 40

Maximum Gate-Source Voltage |Vgs|, V: 4.5

Maximum Drain Current |Id|, A: 0.009

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm:

Package: TO-92

2N5461 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N5461 PDF doc:

1.1. 2n5460_2n5461_2n5462.pdf Size:116K _motorola

2N5461
2N5461

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5460/D JFET Amplifiers 2N5460 P–Channel — Depletion 2 DRAIN thru 2N5462 3 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc 1 Forward Gate Current IG(f) 10 mAdc 2 3 Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C

1.2. 2n5460_2n5461_2n5462_mmbf5460_mmbf5461_mmbf5462.pdf Size:114K _fairchild_semi

2N5461
2N5461

2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25°C unless otherwise noted - Sym

1.3. 2n5460_sst5460_2n5461_sst5461_2n5462_sst5462.pdf Size:48K _vishay

2N5461
2N5461

2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 SST5460 2N5461 SST5461 2N5462 SST5462 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 40 1 –1 2N/SST5461 1 to 7.5 40 1.5 –2 2N/SST5462 1.8 to 9 40 2 –4 FEATURES BENEFITS APPLICATIONS D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage Amplifie

1.4. 2n5460_2n5461_2n5462.pdf Size:62K _central

2N5461
2N5461

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.5. 2n5460_2n5461_2n5462.pdf Size:60K _onsemi

2N5461
2N5461

2N5460, 2N5461, 2N5462 JFET Amplifier P-Channel - Depletion Features • Pb-Free Packages are Available* http://onsemi.com 2 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain - Gate Voltage VDG 40 Vdc GATE Reverse Gate - Source Voltage VGSR 40 Vdc Forward Gate Current IG(f) 10 mAdc 1 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Junction Temp

See also transistors datasheet: 2N5434 , 2N5452 , 2N5453 , 2N5454 , 2N5457 , 2N5458 , 2N5459 , 2N5460 , IRF2807 , 2N5462 , 2N5515 , 2N5516 , 2N5517 , 2N5518 , 2N5519 , 2N5520 , 2N5521 .

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