All MOSFET. MPF102 Datasheet

 

MPF102 MOSFET. Datasheet pdf. Equivalent

Type Designator: MPF102

Type of Transistor: JFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 7.5 V

Maximum Drain Current |Id|: 0.02 A

Maximum Junction Temperature (Tj): 155 °C

Package: TO-92

MPF102 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MPF102 PDF doc:

1.1. mpf102rev0d.pdf Size:270K _motorola

MPF102
MPF102

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPF102/D JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc 1 2 3 Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS –25 Vdc CASE 29–04, STYLE 5 Gate Current IG 10 mAdc TO–92 (TO–226AA) Total Device Dissipation @ TA = 25°

1.2. mpf102.pdf Size:26K _fairchild_semi

MPF102
MPF102

MPF102 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA TJ, TSTG O

1.3. mpf102.pdf Size:146K _onsemi

MPF102
MPF102

MPF102 Preferred Devices JFET VHF Amplifier N-Channel - Depletion Features • Pb-Free Package is Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit 3 Drain-Source Voltage VDS 25 Vdc GATE Drain-Gate Voltage VDG 25 Vdc Gate-Source Voltage VGS -25 Vdc 2 SOURCE Gate Current IG 10 mAdc Total Device Dissipation PD @ TA = 25°C 350 mW Derate above 25°C 2.8 mW/°

Datasheet: MMBF5484 , MMBF5485 , MMBF5486 , MMBFJ270 , MMBFJ271 , J309 , MMBFJ309 , MMBFJ310 , STP75NF75 , P1086 , P1087 , STP11NB40 , STP11NB40FP , STP9NB50 , STP9NB50FP , PF5102 , PF5103 .

 


MPF102
  MPF102
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  MPF102
 
MPF102
  MPF102
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