All MOSFET Datasheet

 

3N50 MOSFET (IC) Datasheet. Cross Reference Search. 3N50 Equivalent

Type Designator: 3N50

Type of 3N50 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of 3N50 transistor (tr), nS: 25

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 2.2

Package: TO-252_TO-220F

3N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

3N50 PDF doc:

1.1. mte53n50erev2.pdf Size:167K _motorola

3N50
3N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTE53N50E/D Designer's? Data Sheet MTE53N50E ISOTOP? TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET 53 AMPERES This advanced high voltage TMOS EFET is designed to 500 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(o

1.2. mtp3n50e.pdf Size:215K _motorola

3N50
3N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's? Data Sheet MTP3N50E TMOS E-FET.? Motorola Preferred Device High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced high voltage TMOS EFET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new high energy d

1.3. mtp3n50erev1a.pdf Size:251K _motorola

3N50
3N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's? Data Sheet MTP3N50E TMOS E-FET.? Motorola Preferred Device High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced high voltage TMOS EFET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new high energy d

1.4. mte53n50e.pdf Size:172K _motorola

3N50
3N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTE53N50E/D Designer's? Data Sheet MTE53N50E ISOTOP? TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET 53 AMPERES This advanced high voltage TMOS EFET is designed to 500 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(o

1.5. phx3n50e.pdf Size:72K _philips2

3N50
3N50

Philips Semiconductors Product specification PowerMOS transistors PHX3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 2.1 A g • Isolated package RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

1.6. php3n50_1.pdf Size:52K _philips2

3N50
3N50

Philips Semiconductors Product specification PowerMOS transistor PHP3N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 3.4 A off-state characteristics, fast Ptot Total power dissipation

1.7. php3n50e_phb3n50e.pdf Size:78K _philips2

3N50
3N50

Philips Semiconductors Product specification PowerMOS transistors PHP3N50E, PHB3N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 3.4 A g • Low thermal resistance RDS(ON) ≤ 3 Ω s GENERAL DESCRIPTION N-channel, enhan

1.8. fqb13n50c_fqi13n50c.pdf Size:967K _fairchild_semi

3N50
3N50

October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to

1.9. fqp13n50cf_fqpf13n50cf.pdf Size:1148K _fairchild_semi

3N50
3N50

May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mi

1.10. fqa13n50cf.pdf Size:776K _fairchild_semi

3N50
3N50

July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to Fast switching

1.11. fdp13n50f_fdpf13n50ft.pdf Size:625K _fairchild_semi

3N50
3N50

September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54? Features Description RDS(on) = 0.42? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technology has been es

1.12. fqp3n50c.pdf Size:1267K _fairchild_semi

3N50
3N50

® QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description • 3 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10 nC ) DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to

1.13. fdd3n50nz.pdf Size:528K _fairchild_semi

3N50
3N50

October 2009 UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5? Features Description RDS(on) = 2.1? ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 6.2nC) stripe, DMOS technology. Low Crss ( Typ. 2.5pF) This advance technology has been especially tailore

1.14. fqpf13n50c.pdf Size:1062K _fairchild_semi

3N50
3N50

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

1.15. fdpf3n50nz.pdf Size:746K _fairchild_semi

3N50
3N50

October 2013 FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features Description • RDS(on) = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS • Low Gate Charge (Typ. 6.2 nC) technology. This advanced MOSFET family has the smallest • Low Crss (Typ. 2.5 pF

1.16. fqd3n50c_fqu3n50c.pdf Size:927K _fairchild_semi

3N50
3N50

March 2008 QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description 2.5A, 500V, RDS(on) = 2.5? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF) This advanced technology has been especially tailored to F

1.17. fqp13n50c_fqpf13n50c.pdf Size:922K _fairchild_semi

3N50
3N50

TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast swi

1.18. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

3N50
3N50

QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- Fast

1.19. fqp13n50c.pdf Size:1062K _fairchild_semi

3N50
3N50

November 2013 FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, • transistors are produced using Fairchild’s proprietary, ID = 6.5 A planar stripe, DMOS technology. This advanced • Low Gate Charge (Typ. 43 nC) technology has been especia

1.20. fqp13n50_fqpf13n50.pdf Size:883K _fairchild_semi

3N50
3N50

TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast sw

1.21. fqa13n50c_f109.pdf Size:862K _fairchild_semi

3N50
3N50

December 2013 FQA13N50C_F109 N-Channel QFET® MOSFET 500 V, 13.5 A, 480 mΩ Description Features These N-Channel enhancement mode power field effect • 13.5 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, ID = 6.75 A planar stripe, DMOS technology. This advanced technology • Low Gate Charge (Typ. 43 nC) has been especia

1.22. irfp23n50l.pdf Size:104K _international_rectifier

3N50
3N50

PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS) 500V 0.190? 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalan

1.23. irfb13n50a.pdf Size:97K _international_rectifier

3N50
3N50

PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 ? 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-2

1.24. irfb13n50apbf.pdf Size:189K _international_rectifier

3N50
3N50

PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 ? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.25. irfc43n50kb.pdf Size:13K _international_rectifier

3N50
3N50

PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS(on)=0.090? G 6" Wafer S Electrical Characteristics Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500V Min. VGS = 0V, ID = 250A RDS(on) Static Drain-to-Source On-Resistance 0.090? Max. VGS = 10V, ID = 28A VGS(th) Gate Threshold Voltage 3.0V Min., 5.0V Max.

1.26. irfps43n50k.pdf Size:99K _international_rectifier

3N50
3N50

PD- 93922B SMPS MOSFET IRFPS43N50K HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.078? 47A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Cap

1.27. irfps43n50k_sihfps43n50k.pdf Size:170K _vishay

3N50
3N50

IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current Configurat

1.28. irfb13n50a_sihfb13n50a.pdf Size:201K _vishay

3N50
3N50

IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) (?)VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration Single

1.29. irfp23n50l_sihfp23n50l.pdf Size:188K _vishay

3N50
3N50

IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) (?)VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd (nC) 7

1.30. zxt13n50de6.pdf Size:423K _diodes

3N50
3N50

ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATU

1.31. spd03n50c3_rev.2.5.pdf Size:625K _infineon

3N50
3N50

VDS Tjmax ? G G

1.32. ixfh13n50_ixfm13n50.pdf Size:82K _ixys

3N50
3N50

HiPerFETTM IXFH 13 N50 VDSS = 500 V Power MOSFETs IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr ? 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C13 A TO-204 AA (IXFM) IDM

1.33. ixta3n50p_ixtp3n50p_ixty3n50p.pdf Size:237K _ixys

3N50
3N50

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM TC = 25 C, pulse width limited

1.34. ixfk33n50_ixfk35n50.pdf Size:38K _ixys

3N50
3N50

VDSS ID25 RDS(on) HiPerFETTM IXFK33N50 500 V 33 A 0.16 W Power MOSFETs IXFK35N50 500 V 35 A 0.15 W N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated, High dv/dt, Low trr Preliminary data TO-264 AA Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V G VGS Continuous ±20 V D (TAB) D S VGSM Transient ±30 V ID

1.35. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys

3N50
3N50

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25C to 150C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab) S TL 1.6mm (0.062 in.)

1.36. ixtk33n50.pdf Size:92K _ixys

3N50
3N50

IXTK 33N50 VDSS = 500 V High Current ID (cont) = 33 A MegaMOSTMFET Ω RDS(on) = 0.17 Ω Ω Ω Ω N-Channel Enhancement Mode Preliminary data Symbol Test conditions Maximum ratings TO-264 AA VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V D (TAB) G D ID25 TC = 25°C 33 A S IDM TC = 25°C, pulse

1.37. ixfp3n50pm.pdf Size:107K _ixys

3N50
3N50

Preliminary Technical Information VDSS = 500 V IXFP 3N50PM PolarHVTM HiPerFET ID25 = 2.7 A Power MOSFET ? ? RDS(on) ? 2.0 ? ? ? ? ? ? ? (Electrically Isolated Tab) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to

1.38. ixfj13n50.pdf Size:66K _ixys

3N50
3N50

HiPerFETTM IXFJ 13N50 VDSS = 500 V Power MOSFETs ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr £ 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V D é VGS Continuous ±20 V S (TAB) VGSM Transient ±30 V ID25 TC = 25°C13 A G = Gate, D = Drain, S = So

1.39. ixtk33n45_ixtk33n50.pdf Size:74K _ixys

3N50
3N50



1.40. 3n50z.pdf Size:173K _utc

3N50
3N50

UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high ener

1.41. 3n50.pdf Size:231K _utc

3N50
3N50

UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state 1 resistance and superior switching performance. It also can withstand high energy pulse in

1.42. 13n50.pdf Size:216K _utc

3N50
3N50

UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse 1 under the avalanche and commutation

1.43. kf13n50p-f.pdf Size:901K _kec

3N50
3N50

KF13N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 500V, ID= 13A ·Drain-

1.44. kf3n50dz-iz.pdf Size:404K _kec

3N50
3N50

KF3N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ electronic ballas

1.45. kf3n50dz-ds.pdf Size:382K _kec

3N50
3N50

KF3N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ electronic ballast and swit

1.46. kf3n50fz-fs.pdf Size:82K _kec

3N50
3N50

KF3N50FZ/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS _ A 10.16 0.2 + electronic ballast and switching m

1.47. aotf13n50.pdf Size:159K _aosemi

3N50
3N50

AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.48. aot13n50.pdf Size:159K _aosemi

3N50
3N50

AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss a

1.49. aot3n50.pdf Size:158K _aosemi

3N50
3N50

AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 3Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with

1.50. aod3n50.pdf Size:273K _aosemi

3N50
3N50

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150℃ designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V) < 3Ω By providing low RDS(on), Ciss and Crss along with

1.51. aotf3n50.pdf Size:158K _aosemi

3N50
3N50

AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 3Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with

1.52. aou3n50.pdf Size:273K _aosemi

3N50
3N50

AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150℃ designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V) < 3Ω By providing low RDS(on), Ciss and Crss along with

1.53. ap13n50i-hf.pdf Size:96K _a-power

3N50
3N50

AP13N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

1.54. ap13n50w.pdf Size:58K _a-power

3N50
3N50

AP13N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos

1.55. ap13n50r-hf.pdf Size:57K _a-power

3N50
3N50

AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

1.56. sif13n50c.pdf Size:298K _sisemi

3N50
3N50

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHA

1.57. mtn13n50e3.pdf Size:508K _cystek

3N50
3N50

Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resis

1.58. mtn13n50fp.pdf Size:338K _cystek

3N50
3N50

Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low o

1.59. 13n50.pdf Size:1972K _goford

3N50
3N50

GOFORD 13N50 500V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID This Power MOSFET is produced using advanced planar stripe DMOS technology. 500V 0.48Ω 13A This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

1.60. sdu03n50_sdd03n50.pdf Size:412K _samhop

3N50
3N50

Green Product SDU/D03N50 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (Ω) Typ Rugged and reliable. 500V 2.6A 2.0 @ VGS=10V Suface Mount Package. D G S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) ORDER

1.61. ssf13n50.pdf Size:510K _silikron

3N50
3N50

 SSF13N50 Main Product Characteristics VDSS 500V RDS(on) 0.39Ω(typ.) ID 13A Marking and Pin TO-220 Schematic Diagram Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ o

1.62. ssf13n50f.pdf Size:533K _silikron

3N50
3N50

 SSF13N50F Main Product Characteristics: VDSS 500V RDS(on) 0.41Ω(typ.) ID 13A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

1.63. brf13n50.pdf Size:896K _blue-rocket-elect

3N50
3N50

BRF13N50(BRCS13N50FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 超低栅电荷,低反馈电容,开关速度快。 Ultra low gate charge, low effective output capacitance, high switch speed. 用途 / Applications 用于小型化高效率的开关电源的

1.64. cs13n50_a8h.pdf Size:357K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS13N50 A8H VDSS 500 V General Description: ID 13 A CS13N50 A8H, the silicon N-channel Enhanced PD (TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.34 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

1.65. cs13n50f_a9d.pdf Size:486K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS13N50F A9D VDSS 500 V General Description: ID 13 A CS13N50F A9D, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.66. cs3n50_b4hy.pdf Size:250K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS3N50 B4HY General Description: VDSS 500 V CS3N50 B4HY, the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.67. cs13n50f_a9h.pdf Size:346K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS13N50F A9H VDSS 500 V General Description: ID 13 A CS13N50F A9H, the silicon N-channel Enhanced PD (TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.34 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.68. cs3n50_b4.pdf Size:230K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS3N50 B4 General Description: VDSS 500 V CS3N50 B4, the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

1.69. cs13n50_a8r.pdf Size:265K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS13N50 A8R General Description: VDSS 500 V CS13N50 A8R, the silicon N-channel Enhanced ID 13 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.70. cs3n50_b3hy.pdf Size:201K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS3N50 B3HY General Description: VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W RDS(ON)Typ 2.4 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

1.71. cs3n50_b3.pdf Size:196K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS3N50 B3 General Description: VDSS 500 V CS3N50 B3, the silicon N-channel Enhanced ID 3 A PD (TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON) 2.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swit

1.72. cs13n50f_a9r.pdf Size:268K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS13N50F A9R General Description: VDSS 500 V CS13N50F A9R, the silicon N-channel Enhanced ID 13 A PD(TC=25℃) 42 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.4 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

1.73. cs13n50_a8d.pdf Size:489K _crhj

3N50
3N50

Silicon N-Channel Power MOSFET R ○ CS13N50 A8D VDSS 500 V General Description: ID 13 A CS13N50 A8D, the silicon N-channel Enhanced PD (TC=25℃) 125 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.4 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

1.74. cm13n50f_to220fh.pdf Size:147K _jdsemi

3N50
3N50

R CM13N50F 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS

1.75. cm3n50c.pdf Size:126K _jdsemi

3N50
3N50

R C35C MN0 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯 等功率开关电路 2 .主要特点 开关速度快 通态电阻小,输入电容小 TO-251 TO-252 3

1.76. cm13n50.pdf Size:130K _jdsemi

3N50
3N50

R C1N0 M35 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆500V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1 .主要用途 主要用于电子镇流器、节能灯、 跑步机等功率开关电路 2 .主要特点 开关速度快 驱动简单,可并联使用 3 .封装

See also transistors datasheet: UF830Z , UF840 , UK3568 , UF450 , UF460 , 1N50 , 1N50Z , 2N50 , IRF4905 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 8N50 , 1N40 .

Search Terms:

 3N50 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


3N50
  3N50
  3N50
  3N50
 
3N50
  3N50
  3N50
  3N50
 

social 

LIST

Last Update

MOSFET: RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 | RFL1N20L | RFL1N20 | RFL1N18L | RFL1N18 | RFL1N10 | RFL1N08 | SM7308CSKP | SM6043CSQ |

Enter a full or partial SMD code with a minimum of 2 letters or numbers