MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
3N50
  3N50
  3N50
 
3N50
  3N50
  3N50
 
3N50
  3N50
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP02N40K-HF
AP02N40P ..AP2306GN-HF
AP2307GN-HF ..AP4411GM
AP4412GM ..AP6683GYT-HF
AP6800GEO ..AP94T07GP-HF
AP94T07GP1-HF ..AP9976GM
AP9976GP ..APT50M60JN
APT50M85JVFR ..AUIRFP4668
AUIRFP4768 ..BF556C
BF805 ..BLF6G27LS-75
BLF6G27S-45 ..BSC120N03MSG
BSC123N08NS3G ..BSZ12DN20NS3G
BSZ130N03LSG ..BUK7520-55A
BUK7523-75A ..BUK9616-75B
BUK9618-30 ..CEB01N65
CEB01N6G ..CEF740G
CEF80N15 ..CEP85N75
CEP85N75V ..DMG9926UDM
DMG9926USD ..EKV550
EMH1303 ..FDB6030L
FDB6035AL ..FDD8444L_F085
FDD8444_F085 ..FDMC8622
FDMC86240 ..FDP18N20F
FDP18N50 ..FDS6375
FDS6570A ..FK14UM-10
FK14UM-9 ..FQD5N60C
FQD5P10 ..FQT1N60C
FQT1N80 ..FRX130H4
FRX130R1 ..H5N2509PF
H5N2510DL ..HAT2105T
HAT2108R ..HUF75343G3
HUF75343P3 ..IPB048N06LG
IPB049N06L3G ..IPD30N06S2-15
IPD30N06S2-23 ..IPI90R340C3
IPI90R500C3 ..IPU075N03LG
IPU090N03LG ..IRF3315L
IRF3315S ..IRF6629
IRF6631 ..IRF7507
IRF7507(N) ..IRF9643
IRF9910 ..IRFH5306
IRFH5406 ..IRFP240FI
IRFP241 ..IRFR5305
IRFR540Z ..IRFS9233
IRFS9240 ..IRFY130C
IRFY140 ..IRLHS6342
IRLHS6376 ..IRLZ14A
IRLZ20 ..IXFH26N50
IXFH26N50P ..IXFL38N100Q2
IXFL39N90 ..IXFR20N120P
IXFR20N80P ..IXFX220N15P
IXFX220N17T2 ..IXTA6N50D2
IXTA6N50P ..IXTH67N10
IXTH67N10MA ..IXTP2R4N50P
IXTP300N04T2 ..IXTT60N20L2
IXTT64N25P ..KF3N50IZ
KF3N60D ..KP501A
KP501B ..MCH6342
MCH6344 ..MTBA5C10Q8
MTBA5N10FP ..MTN3484J3
MTN3484V8 ..NDB6020
NDB6020P ..NTD4906N
NTD4909N ..NUD4700
NUS3116MT ..PMBF4416A
PMBF5484 ..PSMN3R3-40YS
PSMN3R4-30PL ..RFD16N05L
RFD16N05LSM ..RJK0852DPB
RJK0853DPB ..RRQ030P03
RRQ045P03 ..SDF250JAB
SDF26N50 ..SGM3055
SGS100MA010D1 ..SMK1260WF
SMK1265F ..SML60H20
SML60J35 ..SPP18P06PH
SPP20N60C3 ..SSH4N70
SSH4N70A ..SSM6J25FE
SSM6J26FE ..SST4117
SST4118 ..STD17N05L
STD17N05L-1 ..STF11NM60ND
STF11NM80 ..STK2N80
STK2NA60 ..STP23NM60ND
STP24NF10 ..STP7NK30Z
STP7NK40Z ..STW15NK90Z
STW15NM60ND ..TK14A55D
TK150F04K3 ..TPC8030
TPC8031-H ..TPCC8102
TPCC8103 ..UT4812
UT4812Z ..ZVN4310G
ZVN4424A ..ZXMS6006SG
 
3N50 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

3N50 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 3N50

Type of 3N50 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 3

Maximum junction temperature (Tj), °C: 150

Rise Time of 3N50 transistor (tr), nS: 25

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 2.2

Package: TO-252_TO-220F

Equivalent transistors for 3N50

3N50 PDF doc:

1.1. mtp3n50e.pdf Size:215K _motorola

3N50
3N50
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's? Data Sheet MTP3N50E TMOS E-FET.? Motorola Preferred Device High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced high voltage TMOS EFET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new high energy device also offers a draintosource diode RDS(on) = 3.0 OHMS with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor ? controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. D Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching G Internal SourcetoDrain Diode Designed to Replace Extern

1.2. mtp3n50erev1a.pdf Size:251K _motorola

3N50
3N50
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP3N50E/D Designer's? Data Sheet MTP3N50E TMOS E-FET.? Motorola Preferred Device High Energy Power FET NChannel EnhancementMode Silicon Gate TMOS POWER FET This advanced high voltage TMOS EFET is designed to 3.0 AMPERES withstand high energy in the avalanche mode and switch efficiently. 500 VOLTS This new high energy device also offers a draintosource diode RDS(on) = 3.0 OHMS with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor ? controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. D Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching G Internal SourcetoDrain Diode Designed to Replace Extern

1.3. mte53n50e.pdf Size:172K _motorola

3N50
3N50
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTE53N50E/D Designer's? Data Sheet MTE53N50E ISOTOP? TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET 53 AMPERES This advanced high voltage TMOS EFET is designed to 500 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 0.080 OHM This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor ? controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against 4 unexpected voltage transients. 1 3 2500 V RMS Isolated Isotop Package 2 Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

1.4. mte53n50erev2.pdf Size:167K _motorola

3N50
3N50
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTE53N50E/D Designer's? Data Sheet MTE53N50E ISOTOP? TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor NChannel EnhancementMode Silicon Gate TMOS POWER FET 53 AMPERES This advanced high voltage TMOS EFET is designed to 500 VOLTS withstand high energy in the avalanche mode and switch efficiently. RDS(on) = 0.080 OHM This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor ? controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against 4 unexpected voltage transients. 1 3 2500 V RMS Isolated Isotop Package 2 Avalanche Energy Specified SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

1.5. php3n50_1.pdf Size:52K _philips2

3N50
3N50
Philips Semiconductors Product specification PowerMOS transistor PHP3N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 3.4 A off-state characteristics, fast Ptot Total power dissipation 83 W switching and high thermal cycling RDS(ON) Drain-source on-state resistance 3 ? performance with low thermal resistance. Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ID Continuous drain current Tmb = 25 ?C; VGS = 10 V - 3.4 A Tmb = 100 ?C; VGS = 10 V -

1.6. fqp13n50_fqpf13n50.pdf Size:883K _fairchild_semi

3N50
3N50
TM QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 12.5A, 500V, RDS(on) = 0.43? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25C unless otherwise noted

1.7. fdd3n50nz.pdf Size:528K _fairchild_semi

3N50
3N50
October 2009 UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5? Features Description RDS(on) = 2.1? ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low Gate Charge ( Typ. 6.2nC) stripe, DMOS technology. Low Crss ( Typ. 2.5pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast Switching performance, and withstand high energy pulse in the avalanche 100% Avalanche Tested and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt Capability correction. ESD Imoroved Capability RoHS Compliant D D D G G G S D-PAK S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDD3N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage 25 V -Continuous

1.8. fqa13n50cf.pdf Size:776K _fairchild_semi

3N50
3N50
July 2007 FRFET FQA13N50CF 500V N-Channel MOSFET Features Description 15A, 500V, RDS(on) = 0.48? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 43nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high Fast recovery body diode (typical 100ns) efficient switched mode power supplies, active power factor RoHS compliant correction, electronic lamp ballast based on half bridge topology. D G TO-3PN FQA Series G D S S Absolute Maximum Ratings Symbol Parameter FQA13N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25C)

1.9. fdp13n50f_fdpf13n50ft.pdf Size:625K _fairchild_semi

3N50
3N50
September 2007 UniFETTM FDP13N50F / FDPF13N50FT tm N-Channel MOSFET 500V, 12A, 0.54? Features Description RDS(on) = 0.42? ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 30nC) stripe, DMOS technology. Low Crss ( Typ. 14.5pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pulse in the avalanche 100% avalanche tested and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capability correction. RoHS compliant D G TO-220 TO-220F G D S FDP Series G D S FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter FDP13N50F FDPF13N50FT Units VDSS Drain to Source Voltage 500 V VGSS Gate to Sour

1.10. fqb13n50c_fqi13n50c.pdf Size:967K _fairchild_semi

3N50
3N50
October 2008 QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D D G I2-PAK D2-PAK G S FQI Series FQB Series G D S S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter FQB13N50C / FQI13N50C Units VDSS Drain-Source Voltage

1.11. fqd3n50c_fqu3n50c.pdf Size:927K _fairchild_semi

3N50
3N50
March 2008 QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description 2.5A, 500V, RDS(on) = 2.5? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the avalanche Improved dv/dt capability and commutation mode. These devices are well suited for high RoHS compliant efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D D G D-PAK I-PAK G S FQD Series FQU Series G D S S Absolute Maximum Ratings Symbol Parameter Units FQD3N50C/FQU3N50C VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC

1.12. fqp13n50cf_fqpf13n50cf.pdf Size:1148K _fairchild_semi

3N50
3N50
May 2006 TM FRFET FQP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features Description 13A, 500V, RDS(on) = 0.54? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 20pF) This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and 100% avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability cient switched mode power supplies and active power factor correction. Fast recovery body diode (typical 100ns) D G TO-220F TO-220 G D S G D S FQPF Series FDP Series S Absolute Maximum Ratings Symbol Parameter FQP13N50CF FQPF13N50CF Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25C) 13 13* A

1.13. fqp3n50c_fqpf3n50c.pdf Size:1269K _fairchild_semi

3N50
3N50
QFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Features Description 3 A, 500 V, RDS(on) = 2.5 ? @ VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 10 nC ) DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and 100 % avalanche tested commutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF

1.14. fqp13n50c_fqpf13n50c.pdf Size:922K _fairchild_semi

3N50
3N50
TM QFET FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 43 nC) planar stripe, DMOS technology. Low Crss ( typical 20pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25C unl

1.15. irfc43n50kb.pdf Size:13K _international_rectifier

3N50
3N50
PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS(on)=0.090? G 6" Wafer S Electrical Characteristics Parameter Description Guaranteed (Min/Max) Test Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500V Min. VGS = 0V, ID = 250A RDS(on) Static Drain-to-Source On-Resistance 0.090? Max. VGS = 10V, ID = 28A VGS(th) Gate Threshold Voltage 3.0V Min., 5.0V Max. VDS = VGS, ID = 250A IDSS Drain-to-Source Leakage Current 50A Max. VDS = 500V, VGS = 0V, TJ = 25C IGSS Gate-to-Source Leakage Current 100nA Max. VGS = 30V TJ Operating Junction and -55C to 150C Max. TSTG Storage Temperature Range Mechanical Data Nominal Back Metal Composition, Thickness: Cr-NiV-Ag ( 0.1m-0.2m-0.5m ) Nominal Front Metal Composition, Thickness: Al with 1% Si (0.004 mm) Dimensions: 0.315" x 0.470" [ 8.00 mm x 11.94 mm ] Wafer Diameter: 150 mm Wafer Thickness: 0.375 mm 0.025 mm Relevant Die Mechanical Drawing Number 01-5444 Minimum Street Width 0.004" Rej

1.16. irfb13n50a.pdf Size:97K _international_rectifier

3N50
3N50
PD - 94339 SMPS MOSFET IRFB13N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.450 ? 14A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 9.1 A IDM Pulsed Drain Current 56 PD @TC = 25C Power Dissipation 250 W Linear Derating Factor 2.0 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 9.2 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 C (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Avalanche Characteristics Symbol Parameter Typ. Max. Units

1.17. irfps43n50k.pdf Size:99K _international_rectifier

3N50
3N50
PD- 93922B SMPS MOSFET IRFPS43N50K HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.078? 47A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-247 Avalanche Voltage and Current Low RDS(on) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 47 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 29 A IDM Pulsed Drain Current 190 PD @TC = 25C Power Dissipation 540 W Linear Derating Factor 4.3 W/C VGS Gate-to-Source Voltage 30 V dv/dtPeak Diode Recovery dv/dt 9.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 C (1.6mm from case ) Avalanche Characteristics Symbol Parameter Typ.

1.18. irfp23n50l.pdf Size:104K _international_rectifier

3N50
3N50
PD - 94230 SMPS MOSFET IRFP23N50L HEXFET Power MOSFET Applications VDSS RDS(on) typ. Trr typ. ID Switch Mode Power Supply (SMPS) 500V 0.190? 170ns 23A UninterruptIble Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Enhanced Body Diode dv/dt Capability TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 23 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 15 A IDM Pulsed Drain Current 92 PD @TC = 25C Power Dissipation 370 W Linear Derating Factor 2.9 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 14 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 C (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1

1.19. irfb13n50apbf.pdf Size:189K _international_rectifier

3N50
3N50
PD - 95122 SMPS MOSFET IRFB13N50APbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.450 ? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB AbsoIute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 14 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 9.1 A IDM Pulsed Drain Current 56 PD @TC = 25C Power Dissipation 250 W Linear Derating Factor 2.0 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt ? 9.2 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 C (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) AvaIanche Characteristics SymboI Pa

1.20. irfp23n50l_sihfp23n50l.pdf Size:188K _vishay

3N50
3N50
IRFP23N50L, SiHFP23N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) (?)VGS = 10 V 0.190 Lower Gate Charge Results in Simpler Drive RoHS* Qg (Max.) (nC) 150 COMPLIANT Requirements Qgs (nC) 44 Enhanced dV/dt Capabilities Offer Improved Ruggedness Qgd (nC) 72 Higher Gate Voltage Threshold Offers Improved Noise Configuration Single Immunity D Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS Zero Voltage Switching SMPS G Telecom and Server Power Supplies Uninterruptible Power Supplies S Motor Control Applications D S G N-Channel MOSFET ORDERING INFORMATION Package TO-247AC IRFP23N50LPbF Lead (Pb)-free SiHFP23N50L-E3 IRFP23N50L SnPb SiHFP23N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30

1.21. irfb13n50a_sihfb13n50a.pdf Size:201K _vishay

3N50
3N50
IRFB13N50A, SiHFB13N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler Drive VDS (V) 500 Reqirements Available RDS(on) (?)VGS = 10 V 0.450 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 81 COMPLIANT Ruggedness Qgs (nC) 20 Qgd (nC) 36 Fully Characterized Capacitance and Avalanche Voltage Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) G Uninterruptible Power Supplies High Speed Power Switching S D S G N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFB13N50APbF Lead (Pb)-free SiHFB13N50A-E3 IRFB13N50A SnPb SiHFB13N50A ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage 30 VGS 14 TC = 25 C Continuous Drain Current VGS at 10 V ID TC = 100 C 9.1 A Pulsed Drain Currenta IDM 56 Linear Derating

1.22. irfps43n50k_sihfps43n50k.pdf Size:170K _vishay

3N50
3N50
IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current Configuration Single Low RDS(on) D Compliant to RoHS Directive 2002/95/EC Super-247 APPLICATIONS G Switch Mode Power Supply (SMPS) S D Uninterruptible Power Supply G High Speed Power Switching S N-Channel MOSFET Hard Switched and High Frequency Circuits ORDERING INFORMATION Package Super-247 IRFPS43N50KPbF Lead (Pb)-free SiHFPS43N50K-E3 IRFPS43N50K SnPb SiHFPS43N50K ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 TC = 25 C 47 Continuous Drain Current VGS at 10

1.23. zxt13n50de6.pdf Size:423K _diodes

3N50
3N50
ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. SOT23-6 FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=4A Continuous Collector Current SOT23-6 package APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control C C ORDERING INFORMATION C C DEVICE REEL SIZE TAPE WIDTH QUANTITY (inches) (mm) PER REEL B E ZXT13N50DE6TA 7 8mm embossed 3000 units Top View ZXT13N50DE6TC 13 8mm embossed 10000 units DEVICE MARKING N50D ISSUE 1 - NOVEMBER 1999 1 ZXT13N50DE6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base

1.24. spd03n50c3_rev.2.5.pdf Size:625K _infineon

3N50
3N50
VDS Tjmax ? G G TC TC tp Tjmax VDD EAR Tjmax VDD Tjmax Gate source voltage VGS VGS Ptot 5) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.5 P 8-04-10

1.25. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys

3N50
3N50
Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25C to 150C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab) S TL 1.6mm (0.062 in.) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C G = Gate D = Drain Md Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. S = Source Tab = Drain Weight TO-263 2.5 g TO-220 3.0 g Features Normally ON Mode International Standard Packages Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages Symbol Test Conditions Characteristic Values Easy to Mount (TJ = 25C, Unless Otherwise Specified) Min. Typ. Max. Space Savings BVDSX VGS = - 5V, ID = 250?A 500 V High Power Density VGS(off) VDS = 25V, ID = 250?A - 2.0 - 4.0 V Applications IGSX VGS = 20V, V

1.26. ixfh13n50_ixfm13n50.pdf Size:82K _ixys

3N50
3N50
HiPerFETTM IXFH 13 N50 VDSS = 500 V Power MOSFETs IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W N-Channel Enhancement Mode trr ? 250 ns High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 MW 500 V (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C13 A TO-204 AA (IXFM) IDM TC = 25C, pulse width limited by TJM 52 A IAR TC = 25C13 A EAR TC = 25C18 mJ dv/dt IS ? IDM, di/dt ? 100 A/ms, VDD ? VDSS, 5 V/ns TJ ? 150C, RG = 2 W G D PD TC = 25C 180 W G = Gate, D = Drain, TJ -55 ... +150 C S = Source, TAB = Drain TJM 150 C Tstg -55 ... +150 C Features TL 1.6 mm (0.062 in.) from case for 10 s 300 C International standard packages Low RDS (on) HDMOSTM process Md Mounting torque 1.13/10 Nm/lb.in. Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Weight TO-204 = 18 g, TO-247 = 6 g rated Low package inductance - easy to d

1.27. ixfp3n50pm.pdf Size:107K _ixys

3N50
3N50
Preliminary Technical Information VDSS = 500 V IXFP 3N50PM PolarHVTM HiPerFET ID25 = 2.7 A Power MOSFET ? ? RDS(on) ? 2.0 ? ? ? ? ? ? ? (Electrically Isolated Tab) ? trr ? 200 ns ? ? ? N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25 C 2.7 A Isolated Tab IDM TC = 25 C, pulse width limited by TJM 8AG D S IAR TC = 25 C3 A EAR TC = 25 C10 mJ EAS TC = 25 C 100 mJ G = Gate D = Drain S = Source dv/dt IS ?IDM, di/dt ?100 A/s, VDD ?VDSS, 10 V/ns TJ ?150 C, RG = 50 ? PD TC = 25 C36 W TJ -55 ... +150 C Features TJM 150 C Tstg -55 ... +150 C l Plastic overmolded tab for electrical isolation TL 1.6 mm (0.062 in.) from case for 10 s 300 C l Fast intrinsic diode TSOLD Plastic body for 10 s 260 C l International stan

1.28. ixta3n50p_ixtp3n50p_ixty3n50p.pdf Size:237K _ixys

3N50
3N50
IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM TC = 25 C, pulse width limited by TJM 8A TO-263 (IXTA) IAR TC = 25 C3 A EAR TC = 25 C10 mJ EAS TC = 25 C 180 mJ G S dv/dt IS ?IDM, di/dt ?100 A/s, VDD ?VDSS, 10 V/ns (TAB) TJ ?150 C, RG = 20 ? TO-252 (IXTY) PD TC = 25 C70 W TJ -55 ... +150 C TJM 150 C G Tstg -55 ... +150 C S TL 1.6 mm (0.062 in.) from case for 10 s 300 C (TAB) TSOLD Plastic body for 10 s 260 C G = Gate D = Drain Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. S = Source TAB = Drain Weight TO-220 4 g Features TO-263 3 g TO-252 0.8 g l International standard packages l Unclamped Inductive Switching (UIS) rated l Low

1.29. 3n50.pdf Size:231K _utc

3N50
3N50
UNISONIC TECHNOLOGIES CO., LTD 3N50 Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET 1 TO-220F DESCRIPTION The UTC 3N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state 1 resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. TO-252 The UTC 3N50 is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON)=3.2? @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 3N50L-TF3-T 3N50G-TF3-T TO-220F G D S Tube 3N50L-TN3-R 3N50G-TN3-R TO-252 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Sourc

1.30. 13n50.pdf Size:216K _utc

3N50
3N50
UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can also withstand high energy pulse 1 under the avalanche and commutation mode conditions. TO-220F The UTC 13N50 is ideally suitable for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge topology. FEATURES * RDS(ON) =0.48? @VGS = 10V 1 * Ultra low gate charge (typical 43nC ) * Low reverse transfer Capacitance ( CRSS = typical 20pF ) TO-220F1 * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 13N50L-TA3-T 13N50G-TA3-T

1.31. 3n50z.pdf Size:173K _utc

3N50
3N50
UNISONIC TECHNOLOGIES CO., LTD 3N50Z Preliminary Power MOSFET 3A, 500V N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 3N50Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 3N50Z is generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology. FEATURES * RDS(ON)=3.2? @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 3N50ZL-TF3-T 3N50ZG-TF3-T TO-220F G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw 1 of 6 Copyright

1.32. kf3n50dz-iz.pdf Size:404K _kec

3N50
3N50
KF3N50DZ/IZ SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF3N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ electronic ballast and switching mode power supplies. B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ F 2.30 + 0.10 G 0.96 MAX ·VDSS= 500V, ID= 2.5A H 0.90 MAX H ·Drain-Source ON Resistance : RDS(ON)=2.5?(Max) @VGS = 10V J _ J 1.80 + 0.20 E _ K 2.30 + 0.10 G N ·Qg(typ) = 7.50nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 N 0.70 MIN 1 2 3 1. GATE 2. DRAIN MAXIMUM RATING (Tc=25?) 3. SOURCE CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V ±30 DPAK (1) @TC=25? 2.5 ID Drain Current @TC=100? 1.5 A IDP

1.33. kf13n50p-f.pdf Size:901K _kec

3N50
3N50
KF13N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF13N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS= 500V, ID= 13A ·Drain-Source ON Resistance : RDS(ON)=0.44?(Max) @VGS = 10V ·Qg(typ.) = 35nC MAXIMUM RATING (Tc=25?) RATING CHARACTERISTIC SYMBOL UNIT KF13N50P KF13N50F VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V ±30 @TC=25? 13 13* ID Drain Current @TC=100? 8 8* A KF13N50F IDP Pulsed (Note1) 40 40* Single Pulsed Avalanche Energy EAS 860 mJ (Note 2) Repetitive Avalanche Energy EAR 19.5 mJ (Note 1) Peak Diode Recovery dv/dt dv/dt 4.5 V/ns (Note 3) 208 49.8 W Tc=25? Drain Power PD Dissipation 1.66 0.4 Derate above 25? W/? Tj Maximum Junction Temperature 150 ? Ts

1.34. kf3n50fz-fs.pdf Size:82K _kec

3N50
3N50
KF3N50FZ/FS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for E DIM MILLIMETERS _ A 10.16 0.2 + electronic ballast and switching mode power supplies. _ B 15.87 0.2 + _ C 2.54 0.2 + _ D 0.8 0.1 + FEATURES _ E 3.18 0.1 + ·VDSS= 500V, ID= 3A _ F 3.3 0.1 + _ ·Drain-Source ON Resistance : RDS(ON)=2.5?(Max) @VGS = 10V G 12.57 0.2 + L M _ H 0.5 0.1 R + ·Qg(typ) = 7.50nC _ 13.0 0.5 J + _ ·trr(typ) = 120ns (KF3N50FS) K 3.23 0.1 + D L 1.47 MAX ·trr(typ) = 300ns (KF3N50FZ) M 1.47 MAX N N H _ N 2.54 0.2 + _ O 6.68 0.2 + _ Q + 4.7 0.2 MAXIMUM RATING (Tc=25?) _ R 2.76 0.2 + 1 2 3 CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V

1.35. kf3n50dz-ds.pdf Size:382K _kec

3N50
3N50
KF3N50DZ/DS SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate A K DIM MILLIMETERS charge and excellent avalanche characteristics. It is mainly suitable for L C D _ A 6.60 + 0.20 _ electronic ballast and switching mode power supplies. B 6.10 + 0.20 _ C 5.34 + 0.30 _ D 0.70 + 0.20 _ E 2.70 0.15 + B FEATURES _ F 2.30 + 0.10 G 0.96 MAX ·VDSS= 500V, ID= 2.5A H 0.90 MAX H ·Drain-Source ON Resistance : RDS(ON)=2.5?(Max) @VGS = 10V J _ J 1.80 + 0.20 E _ K 2.30 + 0.10 G N ·Qg(typ) = 7.50nC _ L 0.50 0.10 + F F M _ + M 0.50 0.10 ·trr(typ) = 120ns (KF3N50DS) N 0.70 MIN ·trr(typ) = 300ns (KF3N50DZ) O 0.1 MAX 1 2 3 1. GATE 2. DRAIN MAXIMUM RATING (Tc=25?) 3. SOURCE O CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage V

1.36. aou3n50.pdf Size:273K _aosemi

3N50
3N50
AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150℃ designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V) < 3Ω By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested! 100% Rg Tested! TO252 TO251 DPAK D Top View Bottom View Top View Bottom View D D G G S S S S D G D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 500 V Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC=25°C 2.8 Continuous Drain ID CurrentB TC=100°C 1.8 A Pulsed Drain Current C IDM 9 Avalanche Current C IAR 2 A Repetitive avala

1.37. aod3n50.pdf Size:273K _aosemi

3N50
3N50
AOD3N50/AOU3N50 500V, 3A N-Channel MOSFET General Description Product Summary The AOD3N50 & AOU3N50 have been fabricated using an advanced high voltage MOSFET process that is VDS 600V@150℃ designed to deliver high levels of performance and ID (at VGS=10V) 2.8A robustness in popular AC-DC applications. RDS(ON) (at VGS=10V) < 3Ω By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested! 100% Rg Tested! TO252 TO251 DPAK D Top View Bottom View Top View Bottom View D D G G S S S S D G D G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 500 V Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC=25°C 2.8 Continuous Drain ID CurrentB TC=100°C 1.8 A Pulsed Drain Current C IDM 9 Avalanche Current C IAR 2 A Repetitive avala

1.38. aot3n50.pdf Size:158K _aosemi

3N50
3N50
AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 3Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N50L & AOTF3N50L Top View TO-220F TO-220 D G G G D D S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT3N50 AOTF3N50 Units Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC=25°C 3 3* Continuous Drain ID Current TC=100°C 1.9 1.9* A Pulsed Drain Current C IDM 9 Avalanche Current C IAR 2 A Repetitive avalanche energ

1.39. aot13n50.pdf Size:159K _aosemi

3N50
3N50
AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT13N50L & AOTF13N50L Top View TO-220F TO-220 D G G G D D S AOT13N50 S AOTF13N50 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT13N50 AOTF13N50 Units Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC=25°C 13 13* Continuous Drain ID Current TC=100°C 8.5 8.5* A Pulsed Drain Current C IDM 48 Avalanche Current C

1.40. aotf13n50.pdf Size:159K _aosemi

3N50
3N50
AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.51Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT13N50L & AOTF13N50L Top View TO-220F TO-220 D G G G D D S AOT13N50 S AOTF13N50 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT13N50 AOTF13N50 Units Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC=25°C 13 13* Continuous Drain ID Current TC=100°C 8.5 8.5* A Pulsed Drain Current C IDM 48 Avalanche Current C

1.41. aotf3n50.pdf Size:158K _aosemi

3N50
3N50
AOT3N50/AOTF3N50 500V, 3A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT3N50 & AOTF3N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 3A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 3Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT3N50L & AOTF3N50L Top View TO-220F TO-220 D G G G D D S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT3N50 AOTF3N50 Units Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V TC=25°C 3 3* Continuous Drain ID Current TC=100°C 1.9 1.9* A Pulsed Drain Current C IDM 9 Avalanche Current C IAR 2 A Repetitive avalanche energ

1.42. ap13n50w.pdf Size:58K _a-power

3N50
3N50
AP13N50W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G TO-3P D S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +30 V Continuous Drain Current, VGS @ 10V ID@TC=25? 14 A Continuous Drain Current, VGS @ 10V ID@TC=100? 9 A IDM Pulsed Drain Current1 50 A PD@TC=25? Total Power Dissipation 156 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 0.8 ?/W Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ?/W Data

1.43. ap13n50r-hf.pdf Size:57K _a-power

3N50
3N50
AP13N50R-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-262(R) S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +30 V Continuous Drain Current, VGS @ 10V ID@TC=25? 14 A Continuous Drain Current, VGS @ 10V ID@TC=100? 9 A IDM Pulsed Drain Current1 50 A PD@TC=25? Total Power Dissipation 156 W PD@TA=25? Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-

1.44. ap13n50i-hf.pdf Size:96K _a-power

3N50
3N50
AP13N50I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў Low On-resistance BVDSS 500V Ў Simple Drive Requirement RDS(ON) 0.52? Ў Fast Switching Characteristic ID 14A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low G on-resistance and cost-effectiveness. D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +30 V Continuous Drain Current, VGS @ 10V ID@TC=25? 14 A Continuous Drain Current, VGS @ 10V ID@TC=100? 9 A IDM Pulsed Drain Current1 50 A PD@TC=25? Total Power Dissipation 39 W Linear Derating Factor 0.31 W/? EAS Single Pulse Avalanche Energy2 98 mJ IAR Avalanche Current 14 A TSTG Storage Te

1.45. sif13n50c.pdf Size:298K _sisemi

3N50
3N50
深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N- MOS / N-CHANNEL POWER MOSFET SIF13N50C N-沟道功率 MOS 管/ N-CHANNEL POWER MOSFET SIF13N50C RoHS RoHS ●特点:热阻低 开关速度快 输入阻抗高 符合RoHS RoHS规范 FEATURES FEATURES ●FEATURES FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●应用:电子镇流器 电子变压器 开关电源 APPLICATION: APPLICATION: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY APPLICATION: TC=25°C TC=25°C ●最大额定值(TC=25°C TC=25°C) ●Absolute Maximum Ratings(Tc=

1.46. mtn13n50fp.pdf Size:338K _cystek

3N50
3N50
Spec. No. : C405FP Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2011.03.30 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω typ. MTN13N50FP ID : 13A Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Symbol Outline MTN13N50FP TO-220FP G:Gate D:Drain G D S S:Source MTN13N50FP CYStek Product Specification Spec. No. : C405FP

1.47. mtn13n50e3.pdf Size:508K _cystek

3N50
3N50
Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronics Corp. Revised Date : 2009.08.13 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS : 500V RDS(ON) : 0.48Ω MTN13N50E3 ID : 13A Description The MTN13N50E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=550V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Symbol Outline MTN13N50E3 TO-220 G:Gate D:Drain S:Source G D S MTN13N50E3 CYStek Product Specification Spec. No. : C405E3 Issued Date : 2008.12.01 CYStech Electronic

See also transistors datasheet: UF830Z , UF840 , UK3568 , UF450 , UF460 , 1N50 , 1N50Z , 2N50 , IRF4905 , 3N50Z , 4N50 , 5N50 , 5N50K , 6N50 , 7N50 , 8N50 , 1N40 .

Keywords

 3N50 Datasheet  3N50 Datenblatt  3N50 RoHS  3N50 Distributor
 3N50 Application Notes  3N50 Component  3N50 Circuit  3N50 Schematic
 3N50 Equivalent  3N50 Cross Reference  3N50 Data Sheet  3N50 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages