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MTB55N03N3 MOSFET (IC) Datasheet. Cross Reference Search. MTB55N03N3 Equivalent

Type Designator: MTB55N03N3

Type of MTB55N03N3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.38

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.8

Maximum junction temperature (Tj), °C: 150

Rise Time of MTB55N03N3 transistor (tr), nS: 3.7

Drain-source Capacitance (Cd), pF: 46

Maximum drain-source on-state resistance (Rds), Ohm: 0.035

Package: SOT-23

MTB55N03N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTB55N03N3 PDF doc:

1.1. mtb55n03n3.pdf Size:308K _cystek

MTB55N03N3
MTB55N03N3

Spec. No. : C723N3 Issued Date : 2009.06.12 CYStech Electronics Corp. Revised Date : 2012.10.08 Page No. : 1/8 30V N-Channel Logic Level Enhancement Mode MOSFET BVDSS 30V MTB55N03N3 ID 4.8A RDSON(TYP)@VGS=10V, ID=3.5A 35mΩ RDSON(TYP)@VGS=4.5V, ID=2A 58mΩ Features • Lower gate charge • Pb-free lead plating and Halogen-free package Equivalent Circuit Outline MTB5

2.1. mtb55n03j3.pdf Size:279K _cystek

MTB55N03N3
MTB55N03N3

Spec. No. : C723J3 Issued Date : 2012.05.07 CYStech Electronics Corp. Revised Date : 2013.12.26 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB55N03J3 ID 24A RDS(ON)@VGS=10V, ID=12A 34mΩ(typ) RDS(ON)@VGS=4.5V, ID=6A 58mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • Pb-free lead

3.1. mtb55n06z.pdf Size:151K _motorola

MTB55N03N3
MTB55N03N3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET.? High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS EFET is designed to RDS(on) = 18 m? withstand high energy in the avalanche mode and switch efficiently. This new hi

3.2. mtb55n06zrev1.pdf Size:146K _motorola

MTB55N03N3
MTB55N03N3

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB55N06Z/D Advance Information MTB55N06Z TMOS E-FET.? High Energy Power FET D2PAK for Surface Mount TMOS POWER FET NChannel EnhancementMode Silicon Gate 55 AMPERES 60 VOLTS This advanced high voltage TMOS EFET is designed to RDS(on) = 18 m? withstand high energy in the avalanche mode and switch efficiently. This new hi

3.3. mtb55n06q8.pdf Size:318K _cystek

MTB55N03N3
MTB55N03N3

Spec. No. : C746Q8 Issued Date : 2009.10.19 CYStech Electronics Corp. Revised Date : 2013.12.20 Page No. : 1/9 N-Channel Logic Level Enhancement Mode MOSFET BVDSS 60V MTB55N06Q8 ID 8A RDSON@VGS=10V, ID=6A 35mΩ(typ) RDSON@VGS=5V, ID=5A 38mΩ(typ) Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating •

See also transistors datasheet: MTB40P06Q8 , MTB40P06V8 , MTB44P04J3 , MTB45A06Q8 , MTB45P03Q8 , MTB4D0N03ATH8 , MTB4D0N03ATV8 , MTB55N03J3 , IRLR2905 , MTB55N06Q8 , MTB55N10J3 , MTB55N10Q8 , MTB600N03N3 , MTB60A06Q8 , MTB60B06Q8 , MTB60N06J3 , MTB60N06L3 .

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