MOSFET Datasheet


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2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB150N10
FDB15N50 ..FDD86102
FDD86102LZ ..FDMS7698
FDMS7700S ..FDS3590
FDS3672 ..FK18SM-10
FK18SM-12 ..FQP14N30
FQP16N25 ..FRE264R
FRE460D ..FSL23AOD
FSL23AOR ..H7N0311LS
H7N0312AB ..HAT2184WP
HAT2185WP ..HUF76129S3S
HUF76131SK8 ..IPB120N06S4-02
IPB120N06S4-03 ..IPD60R520CP
IPD60R600C6 ..IPP072N10N3G
IPP075N15N3G ..IRC130
IRC140 ..IRF3711ZCS
IRF3711ZL ..IRF6722M
IRF6722S ..IRF7751G
IRF7752 ..IRFB31N20D
IRFB3206 ..IRFI4227
IRFI4229 ..IRFP350A
IRFP350FI ..IRFS151
IRFS152 ..IRFSL3306
IRFSL33N15D ..IRFZ34
IRFZ34A ..IRLL024Z
IRLL110 ..ITF87072DK8T
IXBH15N140 ..IXFH50N60P3
IXFH52N30P ..IXFN100N10S3
IXFN100N20 ..IXFR4N100Q
IXFR50N50 ..IXFX48N55
IXFX48N60P ..IXTC230N085T
IXTC240N055T ..IXTK120N25
IXTK120N25P ..IXTP5N50P
IXTP5N60P ..IXTV200N10T
IXTV200N10TS ..KF60N06P
KF6N60D ..KP727A
KP727B ..MMBF4093
MMBF4117 ..MTD3055V
MTD3055VL ..MTN5N50FP
MTN5N50I3 ..NDD02N60Z
NDD03N50Z ..NTF3055-100
NTF3055L108 ..OM11N60SA
OM1N100SA ..PMGD780SN
PMGD8000LN ..PSMN6R0-30YLB
PSMN6R5-25YLC ..RFG60P03
RFG60P05E ..RJK1555DPA
RJK1557DPA ..RSM002N06
RSM002P03 ..SDF320JAA
SDF320JAB ..SFW9644
SFW9Z14 ..SMK0765F
SMK0765FJ ..SML601R6KN
SML6030BN ..SPD09P06PLG
SPD15P10PG ..SSG4530C
SSG4536C ..SSM3K16CT
SSM3K16FS ..SSP7462N
SSP7464N ..STB70NFS03L
STB75NF20 ..STD6N10-1
STD6N10T4 ..STH10NA50FI
STH12N60 ..STM4470A
STM4470E ..STP22NM60N
STP22NS25Z ..STP75NF68
STP75NF75 ..STT3981
STT3998N ..STW13NK100Z
STW13NK50Z ..TK15A50D
TK15A60D ..TPC8034-H
TPC8035-H ..TPCC8131
TPCC8A01-H ..UT50N03
UT5504 ..ZVN4525E6
ZVN4525G ..ZXMS6006SG
 
2N6660 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N6660 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6660

Type of 2N6660 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 6.25

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6660 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO39

Equivalent transistors for 2N6660

2N6660 PDF doc:

1.1. 2n6660_2n6661.pdf Size:21K _supertex

2N6660
2N6660
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Features high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdown devices are free from thermal runaway and thermally-induced Low power drive requirement secondary breakdown. Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range Low CISS and fast switching

1.2. 2n6660.pdf Size:527K _supertex

2N6660
2N6660
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertex’s well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a device with the power handling > Low CISS and fast switching speeds capabilities of bipolar transistors, and the high input > Excellent thermal stability impedance and positive temperature coefficient inherent > Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this > High input impedance and high gain device is free from thermal runaway and thermally-induced > Hi-Rel processing available secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a wide > Motor controls range of switching and amplifying applications whe

5.1. 2n6667_2n6668.pdf Size:168K _motorola

2N6660
2N6660
Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON • Collector–Emitter Sustaining Voltage — @ 200 mAdc DARLINGTON VCEO(sus) = 60 Vdc (Min) — 2N6667 POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) — 2N6668 10 AMPERES • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc 60–80 VOLTS • Monolithic Construction with Built–In Base–Emitter Shunt Resistors 65 WATTS • TO–220AB Compact Package • Complementary to 2N6387, 2N6388 COLLECTOR BASE [ 8 k [ 120 CASE 221A–06 TO–220AB EMITTER IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Figure 1. Darlington Schematic IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIIIIII

5.2. 2n6668.pdf Size:46K _st

2N6660
2N6660
2N6668 ® SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k? R2(typ) = 120 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 10 A C ICM Collector Peak Current 15 A IB Base Current 250 mA Ptot Total Dissipation at Tc ? 25 oC65 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP type voltage and current values are negative. 1/4 December 2000 2N6668 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.92 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless

5.3. 2n6661-2.pdf Size:149K _vishay

2N6660
2N6660
New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) • Low Threshold: 1.6 V Number • Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 • Fast Switching Speed: 6 ns • Low Input and Output Leakage BENEFITS TO-205AD • Low Offset Voltage (TO-39) • Low-Voltage Operation • Easily Driven Without Buffer S Device Marking • High-Speed Circuits Side View 1 • Low Error Voltage 2N6661-2 “S” fxxyy APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS “S” = Siliconix Logo 2 3 f = Factory Code • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, xxyy = Date Code G D Memories, Transistors, etc. • Battery Operated Systems Top View • Solid-State Relays 2N6661-2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 2N6661-2 Unit Drain-Source Voltage VDS 90 V VGS Gate-Source V

5.4. 2n6661_vn88afd.pdf Size:73K _vishay

2N6660
2N6660
2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, D Low Input Capacitance: 35 pF D Easily Driven Without Buffer etc. D Fast Switching Speed: 6 ns D High-Speed Circuits D Battery Operated Systems D Low Input and Output Leakage D Low Error Voltage D Solid-State Relays TO-220SD TO-205AD D (Tab-Drain) (TO-39) S Device Marking Device Marking Side View Front View 1 2N6661 G VN88AFD “S” fllxxyy “S” xxyy “S” = Siliconix Logo “S” = Siliconix Logo 2 3 f = Factory Code xxyy = Date Code ll = Lot Traceability G D xxyy = Date Code S G D S

5.5. 2n6661.pdf Size:369K _supertex

2N6660
2N6660
Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertex’s well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device with the > Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the > Excellent thermal stability high input impedance and positive temperature coefficient > Integral source-drain diode inherent in MOS devices. Characteristic of all MOS > High input impedance and high gain structures, this device is free from thermal runaway and > Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a > Motor controls wide range of switching and amplifying applications wher

5.6. 2n6666_2n6667_2n6668.pdf Size:157K _bocasemi

2N6660
2N6660
A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.7. 2n6666.pdf Size:142K _inchange_semiconductor

2N6660
2N6660
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC -250 mA Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth

See also transistors datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF520 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

Keywords

 2N6660 Datasheet  2N6660 Datenblatt  2N6660 RoHS  2N6660 Distributor
 2N6660 Application Notes  2N6660 Component  2N6660 Circuit  2N6660 Schematic
 2N6660 Equivalent  2N6660 Cross Reference  2N6660 Data Sheet  2N6660 Fiche Technique

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