MOSFET Datasheet


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2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT6013JVR
APT6015B2VR ..AUIRFR1010Z
AUIRFR1018E ..BF861B
BF861C ..BLF6G38-100
BLF6G38-10G ..BSC12DN20NS3G
BSC130P03LSG ..BSZ160N10NS3G
BSZ165N04NSG ..BUK7526-100B
BUK7528-100A ..BUK9618-55A
BUK96180-100A ..CEB02N65A
CEB02N65G ..CEF830G
CEF840A ..CEP9060N
CEP93A3 ..DMG9933USD
DMN100 ..EMH1307
EMH1405 ..FDB6035L
FDB603AL ..FDD8445
FDD8445_F085 ..FDMC86244
FDMC86324 ..FDP19N40
FDP19N40 ..FDS6574A
FDS6575 ..FK14VS-10
FK14VS-9 ..FQD5P20
FQD6N25 ..FQT1N80
FQT3P20 ..FRX130R2
FRX130R3 ..H5N2510DS
H5N2514P ..HAT2114R
HAT2116H ..HUF75343S3S
HUF75344G3 ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF340
IRF3415 ..IRF6633
IRF6633A ..IRF7507(P)
IRF7509 ..IRF9952Q
IRF9953 ..IRFH7911
IRFH7914 ..IRFP244A
IRFP245 ..IRFR9010
IRFR9012 ..IRFS9520
IRFS9521 ..IRFY340
IRFY340C ..IRLI3705N
IRLI3803 ..IRLZ24NL
IRLZ24NS ..IXFH26N60Q
IXFH28N50F ..IXFL44N80
IXFL60N60 ..IXFR24N50
IXFR24N50Q ..IXFX24N100F
IXFX24N90Q ..IXTA76N075T
IXTA76N25T ..IXTH6N100D2
IXTH6N120 ..IXTP30N10MB
IXTP32N20T ..IXTT72N10
IXTT72N20 ..KF3N80D
KF3N80F ..KP504B
KP504D ..MCH6437
MCH6444 ..MTBA5Q10Q8
MTBA6C12J4 ..MTN3607F3
MTN3820F3 ..NDB603AL
NDB6050 ..NTD4963N
NTD4965N ..NVD5862N
NVD5863NL ..PMBFJ109
PMBFJ110 ..PSMN3R5-80PS
PSMN3R7-25YLC ..RFD3055
RFD3055LE ..RJK1008DPE
RJK1008DPN ..RSC002P03
RSD050N06 ..SDF320JAB
SDF320JDA ..SGSP201
SGSP222 ..SMK1360FD
SMK1430DI ..SML60S16
SML60S18 ..SPP21N50C3
SPP24N60C3 ..SSH5N90A
SSH60N06 ..SSM6J410TU
SSM6J412TU ..SSU1N60A
SSU2N60A ..STD17N06-1
STD17N06L ..STF12NK60Z
STF12NK65Z ..STK4N25
STK4N30 ..STP25N05FI
STP25N06 ..STP7NM80
STP80N20M5 ..STW16NK60Z
STW17N62K3 ..TK15A60D
TK15A60U ..TPC8035-H
TPC8036-H ..TPCC8A01-H
TPCF8001 ..UT5504
UT60N03 ..ZVN4525G
ZVN4525Z ..ZXMS6006SG
 
2N6660 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N6660 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6660

Type of 2N6660 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 6.25

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6660 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO39

Equivalent transistors for 2N6660

2N6660 PDF doc:

1.1. 2n6660_2n6661.pdf Size:21K _supertex

2N6660
2N6660
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Features high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdown devices are free from thermal runaway and thermally-induced Low power drive requirement secondary breakdown. Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range Low CISS and fast switching

1.2. 2n6660.pdf Size:527K _supertex

2N6660
2N6660
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertex’s well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a device with the power handling > Low CISS and fast switching speeds capabilities of bipolar transistors, and the high input > Excellent thermal stability impedance and positive temperature coefficient inherent > Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this > High input impedance and high gain device is free from thermal runaway and thermally-induced > Hi-Rel processing available secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a wide > Motor controls range of switching and amplifying applications whe

5.1. 2n6667_2n6668.pdf Size:168K _motorola

2N6660
2N6660
Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON • Collector–Emitter Sustaining Voltage — @ 200 mAdc DARLINGTON VCEO(sus) = 60 Vdc (Min) — 2N6667 POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) — 2N6668 10 AMPERES • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc 60–80 VOLTS • Monolithic Construction with Built–In Base–Emitter Shunt Resistors 65 WATTS • TO–220AB Compact Package • Complementary to 2N6387, 2N6388 COLLECTOR BASE [ 8 k [ 120 CASE 221A–06 TO–220AB EMITTER IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Figure 1. Darlington Schematic IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIIIIII

5.2. 2n6668.pdf Size:46K _st

2N6660
2N6660
2N6668 ® SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k? R2(typ) = 120 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 10 A C ICM Collector Peak Current 15 A IB Base Current 250 mA Ptot Total Dissipation at Tc ? 25 oC65 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP type voltage and current values are negative. 1/4 December 2000 2N6668 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.92 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless

5.3. 2n6661-2.pdf Size:149K _vishay

2N6660
2N6660
New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) • Low Threshold: 1.6 V Number • Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 • Fast Switching Speed: 6 ns • Low Input and Output Leakage BENEFITS TO-205AD • Low Offset Voltage (TO-39) • Low-Voltage Operation • Easily Driven Without Buffer S Device Marking • High-Speed Circuits Side View 1 • Low Error Voltage 2N6661-2 “S” fxxyy APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS “S” = Siliconix Logo 2 3 f = Factory Code • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, xxyy = Date Code G D Memories, Transistors, etc. • Battery Operated Systems Top View • Solid-State Relays 2N6661-2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 2N6661-2 Unit Drain-Source Voltage VDS 90 V VGS Gate-Source V

5.4. 2n6661_vn88afd.pdf Size:73K _vishay

2N6660
2N6660
2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, D Low Input Capacitance: 35 pF D Easily Driven Without Buffer etc. D Fast Switching Speed: 6 ns D High-Speed Circuits D Battery Operated Systems D Low Input and Output Leakage D Low Error Voltage D Solid-State Relays TO-220SD TO-205AD D (Tab-Drain) (TO-39) S Device Marking Device Marking Side View Front View 1 2N6661 G VN88AFD “S” fllxxyy “S” xxyy “S” = Siliconix Logo “S” = Siliconix Logo 2 3 f = Factory Code xxyy = Date Code ll = Lot Traceability G D xxyy = Date Code S G D S

5.5. 2n6661.pdf Size:369K _supertex

2N6660
2N6660
Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertex’s well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device with the > Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the > Excellent thermal stability high input impedance and positive temperature coefficient > Integral source-drain diode inherent in MOS devices. Characteristic of all MOS > High input impedance and high gain structures, this device is free from thermal runaway and > Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a > Motor controls wide range of switching and amplifying applications wher

5.6. 2n6666_2n6667_2n6668.pdf Size:157K _bocasemi

2N6660
2N6660
A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.7. 2n6666.pdf Size:142K _inchange_semiconductor

2N6660
2N6660
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC -250 mA Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth

See also transistors datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF520 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

Keywords

 2N6660 Datasheet  2N6660 Datenblatt  2N6660 RoHS  2N6660 Distributor
 2N6660 Application Notes  2N6660 Component  2N6660 Circuit  2N6660 Schematic
 2N6660 Equivalent  2N6660 Cross Reference  2N6660 Data Sheet  2N6660 Fiche Technique

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