MOSFET Datasheet


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2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3141
2SK3141-01 ..2SK3668
2SK3669 ..2SK523
2SK525 ..3N60K
3N60Z ..5N80
5N90 ..AP10N70W
AP10P10GH-HF ..AP2R803GH-HF
AP2R803GMT-HF ..AP4543GEH-HF
AP4543GEM-HF ..AP92T12GP-HF
AP92U03GH-HF ..AP98T07GP-HF
AP9918GJ ..APT10M11JVR
APT10M11LVR ..AUIRF3007
AUIRF3205 ..AUIRLR2908
AUIRLR3105 ..BLD6G22LS-50
BLF1043 ..BS170F
BS170P ..BSP75G
BSP75N ..BUK6510-75C
BUK652R0-30C ..BUK9107-55ATE
BUK9120-48TC ..BUZ41A
BUZ42 ..CED12N10L
CED12P10 ..CEP01N65
CEP01N6G ..CEUF640
CEV2306 ..DMP2066LSD
DMP2066LSN ..FCPF22N60NT
FCPF22N60NT ..FDD13AN06A0_F085
FDD14AN06LA0_F085 ..FDMA1032CZ
FDMA1032CZ ..FDMS86103L
FDMS86103L ..FDPF5N50NZF
FDPF5N50NZU ..FDS8958A_F085
FDS8958A_F085 ..FQB19N20L
FQB19N20L ..FQP8N80C
FQP8N80C ..FRL9130H
FRL9130R ..GWM120-0075X1-SL
GWM120-0075X1-SL ..HAT1040T
HAT1041T ..HAT3038R
HAT3040R ..IPA030N10N3G
IPA032N06N3G ..IPB80N03S4L-02
IPB80N03S4L-03 ..IPI100N04S3-03
IPI100N04S4-H2 ..IPP60R160C6
IPP60R165CP ..IRF1010EZL
IRF1010EZS ..IRF5806
IRF5810 ..IRF7321D2
IRF7322D1 ..IRF840A
IRF840A ..IRFBF20S
IRFBF30 ..IRFL014
IRFL014N ..IRFPE40
IRFPE50 ..IRFS453
IRFS4610 ..IRFU2405
IRFU2407 ..IRL3502S
IRL3705N ..IRLR8113
IRLR8256 ..IXFE39N90
IXFE44N50Q ..IXFK21N100F
IXFK21N100Q ..IXFN48N50
IXFN48N50Q ..IXFT68N20
IXFT69N30P ..IXTA140N055T2
IXTA140P05T ..IXTH20N60
IXTH20N60MA ..IXTN600N04T2
IXTN60N50L2 ..IXTQ32P20T
IXTQ36N30P ..IXTZ24N50MA
IXTZ24N50MB ..KHB9D0N90P1
KHB9D5N20D ..KTJ6131E
KTJ6131V ..NCV8402D
NCV8403 ..NTD4805N
NTD4806N ..NTTFS4932N
NTTFS4937N ..PHX3N40E
PHX3N50E ..PSMN2R0-60ES
PSMN2R0-60PS ..RFD12N06RLESM
RFD14N05 ..RJK0455DPB
RJK0456DPB ..RQK0606KGDQA
RQK0607AQDQS ..SDF1NA60JAA
SDF1NA60JAB ..SFW9610
SFW9614 ..SMK0825FZ
SMK0850F ..SML6045BN
SML6045HN ..SPP08N50C3
SPP08N80C3 ..SSH20N45
SSH20N45A ..SSM5P05FU
SSM5P15FU ..SSS5N90A
SSS6N55 ..STD13NM60N
STD14NM50N ..STE50N40
STE53NA50 ..STK12N05L
STK12N06L ..STP20NM60
STP20NM60FD ..STP75N3LLH6
STP75NF20 ..STW12N60
STW12NA50 ..TK12X60U
TK130F06K3 ..TPC8010-H
TPC8012-H ..TPCC8006-H
TPCC8007 ..UT3P06
UT40N03 ..ZVN3310A
ZVN3310F ..ZXMS6006SG
 
2N6660 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N6660 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6660

Type of 2N6660 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 6.25

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6660 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO39

Equivalent transistors for 2N6660

2N6660 PDF doc:

1.1. 2n6660_2n6661.pdf Size:21K _supertex

2N6660
2N6660
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Features high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdown devices are free from thermal runaway and thermally-induced Low power drive requirement secondary breakdown. Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range Low CISS and fast switching

1.2. 2n6660.pdf Size:527K _supertex

2N6660
2N6660
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertex’s well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a device with the power handling > Low CISS and fast switching speeds capabilities of bipolar transistors, and the high input > Excellent thermal stability impedance and positive temperature coefficient inherent > Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this > High input impedance and high gain device is free from thermal runaway and thermally-induced > Hi-Rel processing available secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a wide > Motor controls range of switching and amplifying applications whe

5.1. 2n6667_2n6668.pdf Size:168K _motorola

2N6660
2N6660
Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON • Collector–Emitter Sustaining Voltage — @ 200 mAdc DARLINGTON VCEO(sus) = 60 Vdc (Min) — 2N6667 POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) — 2N6668 10 AMPERES • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc 60–80 VOLTS • Monolithic Construction with Built–In Base–Emitter Shunt Resistors 65 WATTS • TO–220AB Compact Package • Complementary to 2N6387, 2N6388 COLLECTOR BASE [ 8 k [ 120 CASE 221A–06 TO–220AB EMITTER IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Figure 1. Darlington Schematic IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIIIIII

5.2. 2n6668.pdf Size:46K _st

2N6660
2N6660
2N6668 ® SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k? R2(typ) = 120 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 10 A C ICM Collector Peak Current 15 A IB Base Current 250 mA Ptot Total Dissipation at Tc ? 25 oC65 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP type voltage and current values are negative. 1/4 December 2000 2N6668 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.92 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless

5.3. 2n6661-2.pdf Size:149K _vishay

2N6660
2N6660
New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) • Low Threshold: 1.6 V Number • Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 • Fast Switching Speed: 6 ns • Low Input and Output Leakage BENEFITS TO-205AD • Low Offset Voltage (TO-39) • Low-Voltage Operation • Easily Driven Without Buffer S Device Marking • High-Speed Circuits Side View 1 • Low Error Voltage 2N6661-2 “S” fxxyy APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS “S” = Siliconix Logo 2 3 f = Factory Code • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, xxyy = Date Code G D Memories, Transistors, etc. • Battery Operated Systems Top View • Solid-State Relays 2N6661-2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 2N6661-2 Unit Drain-Source Voltage VDS 90 V VGS Gate-Source V

5.4. 2n6661_vn88afd.pdf Size:73K _vishay

2N6660
2N6660
2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, D Low Input Capacitance: 35 pF D Easily Driven Without Buffer etc. D Fast Switching Speed: 6 ns D High-Speed Circuits D Battery Operated Systems D Low Input and Output Leakage D Low Error Voltage D Solid-State Relays TO-220SD TO-205AD D (Tab-Drain) (TO-39) S Device Marking Device Marking Side View Front View 1 2N6661 G VN88AFD “S” fllxxyy “S” xxyy “S” = Siliconix Logo “S” = Siliconix Logo 2 3 f = Factory Code xxyy = Date Code ll = Lot Traceability G D xxyy = Date Code S G D S

5.5. 2n6661.pdf Size:369K _supertex

2N6660
2N6660
Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertex’s well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device with the > Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the > Excellent thermal stability high input impedance and positive temperature coefficient > Integral source-drain diode inherent in MOS devices. Characteristic of all MOS > High input impedance and high gain structures, this device is free from thermal runaway and > Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a > Motor controls wide range of switching and amplifying applications wher

5.6. 2n6666_2n6667_2n6668.pdf Size:157K _bocasemi

2N6660
2N6660
A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.7. 2n6666.pdf Size:142K _inchange_semiconductor

2N6660
2N6660
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC -250 mA Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth

See also transistors datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF520 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

Keywords

 2N6660 Datasheet  2N6660 Datenblatt  2N6660 RoHS  2N6660 Distributor
 2N6660 Application Notes  2N6660 Component  2N6660 Circuit  2N6660 Schematic
 2N6660 Equivalent  2N6660 Cross Reference  2N6660 Data Sheet  2N6660 Fiche Technique

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