MOSFET Datasheet



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2N6660
  2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
  2N6660
  2N6660
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
2N6660 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N6660 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6660

Type of 2N6660 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 6.25

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6660 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO39

Equivalent transistors for 2N6660 - Cross-Reference Search

2N6660 PDF doc:

1.1. 2n6660_2n6661.pdf Size:21K _supertex

2N6660
2N6660
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Features high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdown devices are free from thermal runaway and thermally-induced Low power drive requirement secondary breakdown. Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range Low CISS and fast switching

1.2. 2n6660.pdf Size:527K _supertex

2N6660
2N6660
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertex’s well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a device with the power handling > Low CISS and fast switching speeds capabilities of bipolar transistors, and the high input > Excellent thermal stability impedance and positive temperature coefficient inherent > Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this > High input impedance and high gain device is free from thermal runaway and thermally-induced > Hi-Rel processing available secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a wide > Motor controls range of switching and amplifying applications whe

5.1. 2n6667_2n6668.pdf Size:168K _motorola

2N6660
2N6660
Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON • Collector–Emitter Sustaining Voltage — @ 200 mAdc DARLINGTON VCEO(sus) = 60 Vdc (Min) — 2N6667 POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) — 2N6668 10 AMPERES • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc 60–80 VOLTS • Monolithic Construction with Built–In Base–Emitter Shunt Resistors 65 WATTS • TO–220AB Compact Package • Complementary to 2N6387, 2N6388 COLLECTOR BASE [ 8 k [ 120 CASE 221A–06 TO–220AB EMITTER IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Figure 1. Darlington Schematic IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIIIIII

5.2. 2n6668.pdf Size:46K _st

2N6660
2N6660
2N6668 ® SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k? R2(typ) = 120 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 10 A C ICM Collector Peak Current 15 A IB Base Current 250 mA Ptot Total Dissipation at Tc ? 25 oC65 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP type voltage and current values are negative. 1/4 December 2000 2N6668 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.92 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless

5.3. 2n6661-2.pdf Size:149K _vishay

2N6660
2N6660
New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) • Low Threshold: 1.6 V Number • Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 • Fast Switching Speed: 6 ns • Low Input and Output Leakage BENEFITS TO-205AD • Low Offset Voltage (TO-39) • Low-Voltage Operation • Easily Driven Without Buffer S Device Marking • High-Speed Circuits Side View 1 • Low Error Voltage 2N6661-2 “S” fxxyy APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS “S” = Siliconix Logo 2 3 f = Factory Code • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, xxyy = Date Code G D Memories, Transistors, etc. • Battery Operated Systems Top View • Solid-State Relays 2N6661-2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 2N6661-2 Unit Drain-Source Voltage VDS 90 V VGS Gate-Source V

5.4. 2n6661_vn88afd.pdf Size:73K _vishay

2N6660
2N6660
2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, D Low Input Capacitance: 35 pF D Easily Driven Without Buffer etc. D Fast Switching Speed: 6 ns D High-Speed Circuits D Battery Operated Systems D Low Input and Output Leakage D Low Error Voltage D Solid-State Relays TO-220SD TO-205AD D (Tab-Drain) (TO-39) S Device Marking Device Marking Side View Front View 1 2N6661 G VN88AFD “S” fllxxyy “S” xxyy “S” = Siliconix Logo “S” = Siliconix Logo 2 3 f = Factory Code xxyy = Date Code ll = Lot Traceability G D xxyy = Date Code S G D S

5.5. 2n6661.pdf Size:369K _supertex

2N6660
2N6660
Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertex’s well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device with the > Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the > Excellent thermal stability high input impedance and positive temperature coefficient > Integral source-drain diode inherent in MOS devices. Characteristic of all MOS > High input impedance and high gain structures, this device is free from thermal runaway and > Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a > Motor controls wide range of switching and amplifying applications wher

5.6. 2n6666_2n6667_2n6668.pdf Size:157K _bocasemi

2N6660
2N6660
A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.7. 2n6666.pdf Size:142K _inchange_semiconductor

2N6660
2N6660
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC -250 mA Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth

See also transistors datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF520 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

Keywords

 2N6660 Datasheet  2N6660 Datenblatt  2N6660 RoHS  2N6660 Distributor
 2N6660 Application Notes  2N6660 Component  2N6660 Circuit  2N6660 Schematic
 2N6660 Equivalent  2N6660 Cross Reference  2N6660 Data Sheet  2N6660 Fiche Technique

 

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