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2N6660 MOSFET (IC) Datasheet. Cross Reference Search. 2N6660 Equivalent

Type Designator: 2N6660

Type of 2N6660 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 6.25

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1.1

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of 2N6660 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO39

2N6660 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N6660 PDF doc:

1.1. 2n6660.pdf Size:527K _supertex

2N6660
2N6660

Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertexĺs well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a devic

1.2. 2n6660_2n6661.pdf Size:21K _supertex

2N6660
2N6660

2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information.

1.3. 2n6656-59_2n6660-61.pdf Size:42K _no

2N6660
2N6660

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See also transistors datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF520 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

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