MOSFET Datasheet


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2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
  2N6660
 
2N6660
  2N6660
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF22N60NT
FCPF260N60E ..FDD13AN06A0_F085
FDD13AN06_F085 ..FDMA7630
FDMA7632 ..FDMS8320L
FDMS8320LDC ..FDPF16N50
FDPF16N50T ..FDSS2407
FDT1600N10ALZ ..FQB9P25
FQD10N20C ..FQS4900
FQS4901 ..FRX130R2
FRX130R3 ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB065N03LG
IPB065N06LG ..IPD350N06LG
IPD35N10S3L-26 ..IPP028N08N3G
IPP030N10N3G ..IPW50R399CP
IPW60R041C6 ..IRF350
IRF3515L ..IRF6633A
IRF6635 ..IRF7509
IRF7509(N) ..IRF9953
IRF9956 ..IRFH7911
IRFH7914 ..IRFP244A
IRFP245 ..IRFR9010
IRFR9012 ..IRFS9243
IRFS9520 ..IRFY140C
IRFY240 ..IRLI2203N
IRLI2505 ..IRLZ24
IRLZ24A ..IXFH26N50Q
IXFH26N55Q ..IXFL40N110P
IXFL44N100P ..IXFR21N100Q
IXFR230N20T ..IXFX230N20T
IXFX240N15T2 ..IXTA70N075T2
IXTA70N085T ..IXTH67N10MB
IXTH68N20 ..IXTP30N08MA
IXTP30N08MB ..IXTT68P20T
IXTT69N30P ..KF3N60F
KF3N60I ..KP501V
KP502A ..MCH6421
MCH6431 ..MTBA5N10V8
MTBA5Q10Q8 ..MTN351AN3
MTN35N03J3 ..NDB6030
NDB6030L ..NTD4963N
NTD4965N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF150JAA
SDF150JAB ..SFT1446
SFT1450 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPB80P06PG
SPD01N60C3 ..SSG4394N
SSG4402N ..SSM3K116TU
SSM3K119TU ..SSP5N90A
SSP6N55 ..STB4N62K3
STB4NK60Z ..STD5N52U
STD5N62K3 ..STF8NM50N
STF8NM60ND ..STLT19
STLT19FI ..STP20N10L
STP20N10LFI ..STP6N25FI
STP6N50 ..STT10L01
STT2604 ..STV60N05
STV60N05-16 ..TK12J60U
TK12X53D ..TPC8006-H
TPC8009-H ..TPCC8003-H
TPCC8005-H ..UT3N06
UT3P01Z ..ZVN3306A
ZVN3306F ..ZXMS6006SG
 
2N6660 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N6660 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6660

Type of 2N6660 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 6.25

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1.1

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6660 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO39

Equivalent transistors for 2N6660

2N6660 PDF doc:

1.1. 2n6660_2n6661.pdf Size:21K _supertex

2N6660
2N6660
2N6660 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS /RDS(ON) ID(ON) BVDGS (max) (min) TO-39 60V 3.0? 1.5A 2N6660 90V 4.0? 1.5A 2N6661 High Reliability Devices Advanced DMOS Technology See pages 5-4 and 5-5 for MILITARY STANDARD Process These enhancement-mode (normally-off) transistors utilize a Flows and Ordering Information. vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the Features high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these Free from secondary breakdown devices are free from thermal runaway and thermally-induced Low power drive requirement secondary breakdown. Ease of paralleling Supertex’s vertical DMOS FETs are ideally suited to a wide range Low CISS and fast switching

1.2. 2n6660.pdf Size:527K _supertex

2N6660
2N6660
Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure and > Low power drive requirement Supertex’s well-proven silicon-gate manufacturing process. > Ease of paralleling This combination produces a device with the power handling > Low CISS and fast switching speeds capabilities of bipolar transistors, and the high input > Excellent thermal stability impedance and positive temperature coefficient inherent > Integral source-drain diode in MOS devices. Characteristic of all MOS structures, this > High input impedance and high gain device is free from thermal runaway and thermally-induced > Hi-Rel processing available secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a wide > Motor controls range of switching and amplifying applications whe

5.1. 2n6667_2n6668.pdf Size:168K _motorola

2N6660
2N6660
Order this document MOTOROLA by 2N6667/D SEMICONDUCTOR TECHNICAL DATA 2N6609 (See 2N3773) Darlington Silicon 2N6667 Power Transistors 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc PNP SILICON • Collector–Emitter Sustaining Voltage — @ 200 mAdc DARLINGTON VCEO(sus) = 60 Vdc (Min) — 2N6667 POWER TRANSISTORS VCEO(sus) = 80 Vdc (Min) — 2N6668 10 AMPERES • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2 Vdc (Max) @ IC = 5 Adc 60–80 VOLTS • Monolithic Construction with Built–In Base–Emitter Shunt Resistors 65 WATTS • TO–220AB Compact Package • Complementary to 2N6387, 2N6388 COLLECTOR BASE [ 8 k [ 120 CASE 221A–06 TO–220AB EMITTER IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Figure 1. Darlington Schematic IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII III IIIIIIIIIIII

5.2. 2n6668.pdf Size:46K _st

2N6660
2N6660
2N6668 ® SILICON PNP POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: GENERAL PURPOSE SWITCHING GENERAL PURPOSE SWITCHING AND 3 AMPLIFIER 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM R1(typ) = 8 k? R2(typ) = 120 ? ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 80 V VCEO Collector-Emitter Voltage (IB = 0) 80 V VEBO Emitter-Base Voltage (IC = 0) 5 V I Collector Current 10 A C ICM Collector Peak Current 15 A IB Base Current 250 mA Ptot Total Dissipation at Tc ? 25 oC65 W o T Storage Temperature -65 to 150 C stg o Tj Max. Operating Junction Temperature 150 C For PNP type voltage and current values are negative. 1/4 December 2000 2N6668 THERMAL DATA o Rthj-case Thermal Resistance Junction-case Max 1.92 C/W o Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 oC unless

5.3. 2n6661-2.pdf Size:149K _vishay

2N6660
2N6660
New Product 2N6661-2 Vishay Siliconix N-Channel 90-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 3.6 ? Part VDS min. (V) RDS(on) max. (?) VGS(th) (V) ID (A) • Low Threshold: 1.6 V Number • Low Input Capacitance: 35 pF 4 at VGS = 10 V 2N6661-2 90 0.8 to 2 0.86 • Fast Switching Speed: 6 ns • Low Input and Output Leakage BENEFITS TO-205AD • Low Offset Voltage (TO-39) • Low-Voltage Operation • Easily Driven Without Buffer S Device Marking • High-Speed Circuits Side View 1 • Low Error Voltage 2N6661-2 “S” fxxyy APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS “S” = Siliconix Logo 2 3 f = Factory Code • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, xxyy = Date Code G D Memories, Transistors, etc. • Battery Operated Systems Top View • Solid-State Relays 2N6661-2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 2N6661-2 Unit Drain-Source Voltage VDS 90 V VGS Gate-Source V

5.4. 2n6661_vn88afd.pdf Size:73K _vishay

2N6660
2N6660
2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V (D-S) MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 3.6 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 1.6 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, D Low Input Capacitance: 35 pF D Easily Driven Without Buffer etc. D Fast Switching Speed: 6 ns D High-Speed Circuits D Battery Operated Systems D Low Input and Output Leakage D Low Error Voltage D Solid-State Relays TO-220SD TO-205AD D (Tab-Drain) (TO-39) S Device Marking Device Marking Side View Front View 1 2N6661 G VN88AFD “S” fllxxyy “S” xxyy “S” = Siliconix Logo “S” = Siliconix Logo 2 3 f = Factory Code xxyy = Date Code ll = Lot Traceability G D xxyy = Date Code S G D S

5.5. 2n6661.pdf Size:369K _supertex

2N6660
2N6660
Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode (normally- > Free from secondary breakdown off) transistor that utilizes a vertical DMOS structure > Low power drive requirement and Supertex’s well-proven silicon-gate manufacturing > Ease of paralleling process. This combination produces a device with the > Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the > Excellent thermal stability high input impedance and positive temperature coefficient > Integral source-drain diode inherent in MOS devices. Characteristic of all MOS > High input impedance and high gain structures, this device is free from thermal runaway and > Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertex’s vertical DMOS FETs are ideally suited to a > Motor controls wide range of switching and amplifying applications wher

5.6. 2n6666_2n6667_2n6668.pdf Size:157K _bocasemi

2N6660
2N6660
A B O C A S E M I C O N D U C T O R C O R P A Boca Semiconductor Corp. BSC http://www.bocasemi.com A Boca Semiconductor Corp. BSC http://www.bocasemi.com

5.7. 2n6666.pdf Size:142K _inchange_semiconductor

2N6660
2N6660
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2N6666 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -3A ·Complement to Type 2N6386 APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -15 A IBB Base Current-DC -250 mA Collector Power Dissipation 65 TC=25? PC W Collector Power Dissipation 2 Ta=25? Tj Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 1.92 ?/W Rth

See also transistors datasheet: 2N5485 , 2N5486 , 2N6656 , 2N6657 , 2N6658 , 2N6659 , 2N6659-LCC4 , 2N6659-SM , IRF520 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , 2N6660-SM , 2N6661 , 2N6661-220M , 2N6661JAN .

Keywords

 2N6660 Datasheet  2N6660 Datenblatt  2N6660 RoHS  2N6660 Distributor
 2N6660 Application Notes  2N6660 Component  2N6660 Circuit  2N6660 Schematic
 2N6660 Equivalent  2N6660 Cross Reference  2N6660 Data Sheet  2N6660 Fiche Technique

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