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MTEE2N20FP MOSFET (IC) Datasheet. Cross Reference Search. MTEE2N20FP Equivalent

Type Designator: MTEE2N20FP

Type of MTEE2N20FP transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 25

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 175

Rise Time of MTEE2N20FP transistor (tr), nS: 16

Drain-source Capacitance (Cd), pF: 25

Maximum drain-source on-state resistance (Rds), Ohm: 0.59

Package: TO-220FP

MTEE2N20FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTEE2N20FP PDF doc:

1.1. mtee2n20fp.pdf Size:342K _cystek

MTEE2N20FP
MTEE2N20FP

Spec. No. : C881FP Issued Date : 2012.11.20 CYStech Electronics Corp. Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTEE2N20FP ID 4A RDS(ON)@VGS=10V, ID=2.9A 650 mΩ(typ) RDS(ON)@VGS=7V, ID=1A 590 mΩ(typ) Description The MTEE2N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of f

2.1. mtee2n20j3.pdf Size:308K _cystek

MTEE2N20FP
MTEE2N20FP

Spec. No. : C881J3 Issued Date : 2012.12.14 CYStech Electronics Corp. Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 200V MTEE2N20J3 ID 4.5A RDS(ON)@VGS=10V, ID=2.9A 650 mΩ(typ) RDS(ON)@VGS=7V, ID=1A 590 mΩ(typ) Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic

See also transistors datasheet: MTEA2N15L3 , MTEA2N15Q8 , MTEA6C15J4 , MTEA6C15Q8 , MTEB4N15J3 , MTEB6N20J3 , MTED6N25J3 , MTED6N25KJ3 , 2SK1058 , MTEE2N20J3 , MTEF1P15L3 , MTEF1P15N6 , MTEF1P15Q8 , MTEF1P15V8 , MTEH0N25J3 , MTEJ0P20J3 , MTEJ0P20L3 .

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