All MOSFET. MTP4435V8 Datasheet

 

MTP4435V8 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTP4435V8

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 323 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0103 Ohm

Package: DFN3X3

MTP4435V8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

MTP4435V8 PDF doc:

1.1. mtp4435v8.pdf Size:328K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C391V8 Issued Date : 2012.09.28 CYStech Electronics Corp. Revised Date : Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4435V8 ID -40A 10.3mΩ(typ.) RDSON(MAX)@VGS=-10V, ID=-10A 15mΩ(typ.) RDSON(MAX)@VGS=-5V, ID=-7A Description The MTP4435V8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of

5.1. mtp4413q8.pdf Size:501K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C398Q8 Issued Date : 2007.10.12 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4413Q8 Description The MTP4413Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

5.2. mtp4423q8.pdf Size:426K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C423Q8 Issued Date : 2007.11.15 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4423Q8 Description The MTP4423Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 pack

5.3. mtp4411q8.pdf Size:287K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2011.12.07 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4411Q8 ID -5.3A RDSON@VGS=-10V, ID=-5.3A 35mΩ(typ) RDSON@VGS=-4.5V,ID=-4.2A 56mΩ(typ) Description The MTP4411Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast

5.4. mtp4403q8.pdf Size:622K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C791Q8 Issued Date : 2010.07.16 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4403Q8 RDSON(MAX) 50mΩ ID -6.1A Description The MTP4403Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance

5.5. mtp4403sq8.pdf Size:621K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C804Q8 Issued Date : 2009.12.16 CYStech Electronics Corp. Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -20V MTP4403SQ8 RDSON(MAX) 46mΩ ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistan

5.6. mtp4409q8.pdf Size:336K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C808Q8 Issued Date : 2012.04.03 CYStech Electronics Corp. Revised Date : 2014.05.16 Page No. : 1/9 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS -30V MTP4409Q8 ID -15A RDSON@VGS=-10V, ID=-15A 7.7mΩ(typ) RDSON@VGS=-4.5V, ID=-10A 11.4mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free

5.7. mtp4463q8.pdf Size:331K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C913Q8 Issued Date : 2013.06.18 CYStech Electronics Corp. Revised Date : 2014.05.21 Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -20V MTP4463Q8 ID -14A RDSON@VGS=-4.5V, ID=-14A 8.8mΩ(typ) RDSON@VGS=-2.5V, ID=-10A 12.8mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free

5.8. mtp4411aq8.pdf Size:296K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C386Q8 Issued Date : 2007.06.08 CYStech Electronics Corp. Revised Date : 2013.09.05 Page No. : 1/8 P-Channel Enhancement Mode MOSFET BVDSS -30V MTP4411AQ8 ID -5.3A RDSON@VGS=-10V, ID=-5.3A 35mΩ(typ) RDSON@VGS=-4.5V,ID=-4.2A 56mΩ(typ) Description The MTP4411AQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

5.9. mtp4411m3.pdf Size:281K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C400M3 CYStech Electronics Corp. Issued Date : 2011.10.06 Revised Date : 2013.08.07 Page No. : 1/8 -30V P-CHANNEL Enhancement Mode MOSFET BVDSS -30V MTP4411M3 ID -5A 40mΩ (typ.) RDSON@VGS=-10V, ID=-4A 58mΩ (typ.) RDSON@VGS=-4.5V, ID=-3A Features • Single Drive Requirement • Ultra High Speed Switching • Pb-free lead plating package Symbol Outline

5.10. mtp4409h8.pdf Size:284K _cystek

MTP4435V8
MTP4435V8

Spec. No. : C808H8 Issued Date : 2013.09.02 CYStech Electronics Corp. Revised Date : Page No. : 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP4409H8 ID -15A 7.3mΩ VGS=-10V, ID=-15A RDSON(TYP) 11mΩ VGS=-4.5V, ID=-10A Description The MTP4409H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast swi

Datasheet: MTP4403SQ8 , MTP4409H8 , MTP4409Q8 , MTP4411AQ8 , MTP4411M3 , MTP4411Q8 , MTP4413Q8 , MTP4423Q8 , IRFP4332 , MTP4463Q8 , MTP452L3 , MTP452M3 , MTP4835AQ8 , MTP4835L3 , MTP4835Q8 , MTP4835V8 , MTP5103J3 .

 


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