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AO8808A MOSFET (IC) Datasheet. Cross Reference Search. AO8808A Equivalent

Type Designator: AO8808A

Type of AO8808A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.4

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 150

Rise Time of AO8808A transistor (tr), nS: 7.2

Drain-source Capacitance (Cd), pF: 232

Maximum drain-source on-state resistance (Rds), Ohm: 0.014

Package: TSSOP-8

AO8808A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AO8808A PDF doc:

1.1. ao8808a.pdf Size:365K _aosemi

AO8808A
AO8808A

AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.9A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) < 14mΩ (VGS = 10V) retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 15mΩ (VGS = 4.5V)

5.1. ao8801a.pdf Size:349K _aosemi

AO8808A
AO8808A

AO8801A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V) < 42mΩ for use as a load switch or in PWM applications. RDS(ON) (at VGS= -2.5V) < 54mΩ RDS(ON

5.2. ao8804.pdf Size:139K _aosemi

AO8808A
AO8808A

AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8804 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) < 13mΩ (VGS = 10V) retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 14mΩ

5.3. ao8801.pdf Size:302K _aosemi

AO8808A
AO8808A

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and operation ID = -4.7 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is RDS(ON) < 42mΩ (VGS = -4.5V) suitable for use as a load switch or in PWM applications. RDS(ON) <

5.4. ao8807.pdf Size:152K _aosemi

AO8808A
AO8808A

AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) < 20mΩ (VGS = -4.5V) device is suitable for use as a load switch. AO8807 RDS(ON) < 24mΩ (VGS = -2

See also transistors datasheet: AO7417 , AO7600 , AO7800 , AO7801 , AO8801 , AO8801A , AO8804 , AO8807 , IRF9540N , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , AO8830 , AO9926B , AO9926C .

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