All MOSFET. AO8808A Datasheet

 

AO8808A MOSFET. Datasheet pdf. Equivalent

Type Designator: AO8808A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7.2 nS

Drain-Source Capacitance (Cd): 232 pF

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TSSOP-8

AO8808A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AO8808A PDF doc:

1.1. ao8808a.pdf Size:365K _aosemi

AO8808A
AO8808A

AO8808A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8808A uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.9A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) < 14mΩ (VGS = 10V) retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 15mΩ (VGS = 4.5V)

5.1. ao8801a.pdf Size:349K _aosemi

AO8808A
AO8808A

AO8801A 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO8801A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5A with gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V) < 42mΩ for use as a load switch or in PWM applications. RDS(ON) (at VGS= -2.5V) < 54mΩ RDS(ON

5.2. ao8804.pdf Size:139K _aosemi

AO8808A
AO8808A

AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8804 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) < 13mΩ (VGS = 10V) retaining a 12V VGS(MAX) rating. It is ESD protected. RDS(ON) < 14mΩ

5.3. ao8801.pdf Size:302K _aosemi

AO8808A
AO8808A

AO8801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8801 uses advanced trench technology to VDS (V) = -20V provide excellent RDS(ON), low gate charge and operation ID = -4.7 A (VGS = -4.5V) with gate voltages as low as 1.8V. This device is RDS(ON) < 42mΩ (VGS = -4.5V) suitable for use as a load switch or in PWM applications. RDS(ON) <

5.4. ao8807.pdf Size:152K _aosemi

AO8808A
AO8808A

AO8807 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8807 uses advanced trench technology to VDS (V) = -12V provide excellent RDS(ON), low gate charge and ID = -6.5 A (VGS = -4.5V) operation with gate voltages as low as 1.8V. This RDS(ON) < 20mΩ (VGS = -4.5V) device is suitable for use as a load switch. AO8807 RDS(ON) < 24mΩ (VGS = -2

Datasheet: AO7417 , AO7600 , AO7800 , AO7801 , AO8801 , AO8801A , AO8804 , AO8807 , IRF9540N , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , AO8830 , AO9926B , AO9926C .

 


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