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GFD30N03 MOSFET (IC) Datasheet. Cross Reference Search. GFD30N03 Equivalent

Type Designator: GFD30N03

Type of GFD30N03 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 38

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 40

Maximum junction temperature (Tj), °C: 150

Rise Time of GFD30N03 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 850

Maximum drain-source on-state resistance (Rds), Ohm: 0.015

Package: TO252

GFD30N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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See also transistors datasheet: FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 , 2SK2545 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS , H5N2503P , H5N5004PL , H5N5005PL , H7N0302LS .

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