All MOSFET. AON6458 Datasheet

 

AON6458 MOSFET. Datasheet pdf. Equivalent

Type Designator: AON6458

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 57 nS

Drain-Source Capacitance (Cd): 167 pF

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: DFN5x6

AON6458 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6458 PDF doc:

1.1. aon6458.pdf Size:562K _aosemi

AON6458
AON6458

AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150℃ performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V) < 0.17Ω guaranteed avalanche capab

4.1. aon6454a.pdf Size:251K _aosemi

AON6458
AON6458

AON6454A 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 31A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 38mΩ converters and synchronous rectifiers for consumer, RDS(ON) (at VGS=7V) < 44mΩ telecom, industrial power

4.2. aon6452.pdf Size:399K _aosemi

AON6458
AON6458

AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 25mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 31mΩ

4.3. aon6450.pdf Size:274K _aosemi

AON6458
AON6458

AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 14.5mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 7V) < 17.5m

Datasheet: AON6435 , AON6440 , AON6442 , AON6444 , AON6448 , AON6450 , AON6452 , AON6454A , IRFP260 , AON6482 , AON6484 , AON6486 , AON6500 , AON6502 , AON6504 , AON6506 , AON6508 .

 


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