MOSFET Datasheet


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2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2737
2SK2738 ..2SK3131
2SK3132 ..2SK3625
2SK363 ..2SK427
2SK429L ..3N202
3N203 ..4N70K
4N80 ..AO4627
AO4629 ..AOD2606
AOD2610 ..AON3818
AON4420L ..AOP609
AOT10N60 ..AOW15S65
AOW20C60 ..AP15T20AGH-HF
AP15T20GH-HF ..AP3989I
AP3989P ..AP4933GM-HF
AP4936GM ..AP9412BGM-HF
AP9412CGM-HF ..AP9962AGD
AP9962AGH ..APT10086BVFR
APT10086BVR ..APT50M80JLC
APT50M85B2VFR ..AUIRF7103Q
AUIRF7207Q ..BF1101R
BF1101WR ..BLF404
BLF521 ..BSC019N02KSG
BSC019N04NSG ..BSS138K
BSS138L ..BUK662R4-40C
BUK662R5-30C ..BUK9277-55A
BUK9504-40A ..BUZ64
BUZ71 ..CED4060AL
CED40N10 ..CEP08N8
CEP09N7G ..CPH6341
CPH6347 ..DMP2240UW
DMP22D6UT ..FDA28N50F
FDA33N25 ..FDD3672
FDD3672 ..FDMA7632
FDMA7632 ..FDMS9620S
FDN302P ..FDQ7236AS
FDQ7238AS ..FDS9934C
FDS9934C ..FQB44N10
FQB47P06 ..FQPF17N40
FQPF17N40 ..FRM240R
FRM244D ..H02N60I
H02N60J ..HAT1094C
HAT1095C ..HITJ0204MP
HITJ0302MP ..IPA50R399CP
IPA50R520CP ..IPB80N06S2L-07
IPB80N06S2L-09 ..IPI200N25N3G
IPI22N03S4L-15 ..IPP60R750E6
IPP60R950C6 ..IRF1324L
IRF1324S ..IRF6215
IRF6215L ..IRF7343I
IRF7343Q ..IRF8734
IRF8736 ..IRFD9120
IRFD9210 ..IRFM210A
IRFM214A ..IRFR025
IRFR1010Z ..IRFS5615
IRFS5620 ..IRFU3711Z
IRFU3806 ..IRL520
IRL520A ..IRLSL3034
IRLSL3036 ..IXFH110N15T2
IXFH110N25T ..IXFK32N100Q3
IXFK32N50Q ..IXFN73N30
IXFN73N30Q ..IXFV110N25T
IXFV110N25TS ..IXTA1N100P
IXTA1N120P ..IXTH26P20P
IXTH27N35MA ..IXTP10P50P
IXTP110N055P ..IXTQ62N15P
IXTQ64N25P ..J113
J174 ..KMB012N40DA
KMB014P30QA ..KTK598V
KTK697TV ..MTB12N04J3
MTB12P04J3 ..MTN13N50E3
MTN13N50FP ..MTP3J15N3
MTP3J15Y3 ..NDT3055
NDT3055L ..NTMFS5844NL
NTMS10P02 ..PHP2N50E
PHP2N60E ..PSMN018-80YS
PSMN020-100YS ..RD07MVS1
RD07MVS1B ..RJK0353DPA
RJK0353DSP ..RP1L055SN
RP1L080SN ..SDF044JAA-D
SDF044JAA-S ..SFR9034
SFR9110 ..SMG2329P
SMG2330N ..SML5030AN
SML5030BN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB7NK80Z-1
STB80N20M5 ..STD7NM80
STD7NM80-1 ..STH7NA60FI
STH7NA80 ..STP15N05L
STP15N05LFI ..STP5N95K3
STP5NA50 ..STU60N55F3
STU65N3LLH5 ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
2N7000 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7000 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7000

Type of 2N7000 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7000 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 60

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO226

Equivalent transistors for 2N7000

2N7000 PDF doc:

1.1. 2n7000r3.pdf Size:77K _motorola

2N7000
2N7000
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29–04, STYLE 22 Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO–92 (TO–226AA) Gate–Source Voltage — Continuous VGS ±20 Vdc — Non–repetitive (tp ? 50 µs) VGSM ±40 Vpk Drain Current mAdc Continuous ID 200 Pulsed IDM 500 Total Power Dissipation @ TC = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R?JA 357 °C/W Maximum Lead Temperature for TL 300 °C Soldering Purposes, 1/16? from case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V

1.2. 2n7000-03.pdf Size:274K _philips

2N7000
2N7000
2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator. c c 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain (d) d 2 gate (g) 3 source (s) g 03ab40 03ab30 3 2 1 s SOT54 (TO-92 variant) N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 °C - 60 V ID drain curre

1.3. 2n7000_2n7002.pdf Size:626K _st

2N7000
2N7000
2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 ¦ Low Qg ¦ Low threshold drive SOT23-3L TO-92 Application ¦ Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT23-3L TO-92 Table 1. Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4. 2n7000.pdf Size:94K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.5. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.6. 2n7000bu.pdf Size:85K _fairchild_semi

2N7000
2N7000
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25?) 200 ID mA Continuous Drain Current (TC=100?) 110 IDM Drain Current-Pulsed ? 1000 mA VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25?) 400 mW PD Linear Derating Factor 3.2 mW/? Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R?JA Junction-to-Ambient -- 312.5 ?/W Rev. B N-CHANNEL 2N7000BU/2N7000TA Small Signal MOSFET Electrical Characteristics (TC=25? unless otherwise s

1.7. 2n7000.pdf Size:443K _samsung

2N7000
2N7000
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 200 ID mA Continuous Drain Current (TC=100 ) 110 IDM Drain Current-Pulsed mA 1000 VGS Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25 ) mW 400 PD Linear Derating Factor 3.2 mW/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R JA Junction-to-Ambient - 312.5 /W N-CHANNEL SmaII SignaI MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max

1.8. 2n7000kl_bs170kl.pdf Size:93K _vishay

2N7000
2N7000
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free • ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems TO-226AA TO-92-18RM D (TO-92) (TO-18 Lead Form) 1 1 Device Marking S D Device Marking Front View Front View 100 G “S” 2N “S” BS G G 2 7000KL 2 170KL xxyy xxyy “S” = Siliconix Logo “S” = Siliconix Logo D S 3 xxyy = Date Code 3 xxyy = Date Code Top View Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Dra

1.9. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

2N7000
2N7000
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2.5 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 2.1 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low Input Capacitance: 22 pF D Easily Driven Without Buffer D Battery Operated Systems D Fast Switching Speed: 7 ns D High-Speed Circuits D Solid-State Relays D Low Input and Output Leakage D Low Error Voltage TO-226AA TO-236 (TO-92) (SOT-23) 1 S G 1 G 2 3 D S 2 D 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Cod

1.10. 2n7000g.pdf Size:92K _onsemi

2N7000
2N7000
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable 60 VOLTS • This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 40 Vpk Drain Current mAdc - Continuous ID 200 - Pulsed IDM 500 TO-92 Total Power Dissipation @ TC = 25°C PD 350 mW CASE 29 Derate above 25°C 2.8 mW/°C STYLE 22 Operating and Storage Temperature TJ, Tstg -55 to +150 °C 1 Range 1 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 357 °C/W Maximum Lead Temperature for TL 300 °C MARKING DIAGRAM Soldering Purposes, 1/16? from case AND PIN ASSIGNMENT for 10 seconds Stresses exceeding Maxim

1.11. 2n7000z.pdf Size:150K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000ZL-T92-B 2N7000ZG-T92-B TO-92 S G D Tape Box 2N7000ZL-T92-K 2N7000ZG-T92-K TO-92 S G D Bulk 2N7000ZL-T92-R 2N7000ZG-T92-R TO-92

1.12. 2n7000.pdf Size:355K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000L-T92-B 2N7000G-T92-B TO-92 S G D Tape Box 2N7000L-T92-K 2N7000G-T92-K TO-92 S G D Bulk 2N7000L-T92-R 2N7000G-T92-R TO-92 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: So

1.13. 2n7000k.pdf Size:201K _auk

2N7000
2N7000
2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7000K 2N7000K TO-92 Tape Marking Information 2N 7000K Column 1,2 : Device Code Column 3 : Production Information YWW e.g.) YWW -. YWW : Date Code(year,week) Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 500 mA Pulsed drain current (Note 1) IDP 2 A Power dissipation (Note 2) PD 625 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient

1.14. 2n7000.pdf Size:358K _secos

2N7000
2N7000
2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - Source b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Ratings Unit V Drain-Source Voltage 60 VDS Gate-Source Voltage ±20 -Continuous VGS V ? ±40 -Non-Repetitive (tp 50us) VGSM V Drain Current ID 200 mA -Continuous IDM 500 -Pulsed mA Power Dissipation - TA=25o C W 0.35 PD 25o -Derate Above C 2.8 mW/ o C o Thermal Resistance, Junction-To-Ambient R?JA 357 C /W o Tj, Tstg -55~+150 C Operating Junction and Storage Temperature Range Max. Le

1.15. tsm2n7000.pdf Size:85K _taiwansemi

2N7000
2N7000

1.16. 2n7000k.pdf Size:67K _kec

2N7000
2N7000
2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 CHARACTERISTIC SYMBOL RATING UNIT M 0.45 MAX N 1.00 VDSS Drain-Source Voltage 60 V 1 2 3 VGSS Gate-Source Voltage V 20 1. SOURCE 2. GATE ID Continuous 500 3. DRAIN Drain Current mA IDP Pulsed (Note 1) 2000 PD Drain Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Break

1.17. 2n7000.pdf Size:63K _kec

2N7000
2N7000
2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VGSS Gate-Source Voltage V 1 2 3 20 ID Continuous 500 1. SOURCE Drain Current mA 2. GATE IDP Pulsed(Note 1) 2000 3. DRAIN PD Drain Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

1.18. 2n7000a.pdf Size:61K _kec

2N7000
2N7000
2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VDGR Drain-Gate Voltage (RGS?1?) 60 V 1 2 3 VGSS ±20 Gate-Source Voltage V 1. SOURCE 2. GATE ID Continuous 200 3. DRAIN Drain Current mA IDP Pulsed 500 PD Drain Power Dissipation 400 mW TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25?) CHAR

1.19. 2n7000.pdf Size:239K _lge

2N7000
2N7000
2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 200 mA PD Power Dissipation 350 mW Thermal Resistance, junction to Ambient R?JA 357 ?/W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10?A 60 V Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8 Gate-body Leakage lGSS VDS=0 V, VGS=В±15 V В±10 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=4.5 V, VDS=10 V 75 mA VGS=4.5V, ID=75mA 6 D

1.20. 2n7000.pdf Size:168K _wietron

2N7000
2N7000
WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 200 mA Pulsed Drain Current(1) IDM 500 mA Power Dissipation (TA=25 C) PD 350 mW Maximax Junction-to-Ambient R ?JA 357 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7000=7000 Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw 2N7000 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Max Unit Characteristic Static Drain-Source Breakdown Voltage V V(BR)DSS - 60 VGS=0V, I =10 uA D Gate-Threshold Voltage VG

1.21. h2n7000.pdf Size:51K _hsmc

2N7000
2N7000
Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) BVDSS Drain to

See also transistors datasheet: 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , IRF630 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 , 2N7005 , 2N7006 , 2N7007 .

Keywords

 2N7000 Datasheet  2N7000 Datenblatt  2N7000 RoHS  2N7000 Distributor
 2N7000 Application Notes  2N7000 Component  2N7000 Circuit  2N7000 Schematic
 2N7000 Equivalent  2N7000 Cross Reference  2N7000 Data Sheet  2N7000 Fiche Technique

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