MOSFET Datasheet


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2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP03N70I-HF
AP03N70J-A-HF ..AP2327GN-HF
AP2328GN-HF ..AP4433GM-HF
AP4434AGH-HF ..AP70L02GJ
AP70L02GP ..AP9565GEH
AP9565GEJ ..AP9992GP-HF
AP9992GR-HF ..APT8015JVFR
APT8015JVR ..AUIRFS3004
AUIRFS3004-7P ..BF963
BF964 ..BLF7G22L-250P
BLF7G22LS-100P ..BSD223P
BSD314SPE ..BUK106-50L
BUK106-50LP ..BUK7606-75B
BUK7607-30B ..BUK9775-55
BUK98150-55 ..CEB12N6
CEB12N65 ..CEK01N7
CEK7002A ..CES2324
CES2331 ..DMN2170U
DMN2215UDM ..F5032
F5033 ..FDB8832_F085
FDB8832_F085 ..FDD8874
FDD8874 ..FDMS2504SDC
FDMS2506SDC ..FDP51N25
FDP52N20 ..FDS6690AS
FDS6690AS ..FK30SM-5
FK30SM-6 ..FQI50N06
FQI5N60C ..FQU2N90TU_AM002
FQU3N50C ..FSJ264D
FSJ264R ..H5N6001P
H6968CTS ..HAT2168H
HAT2168N ..HUF75842P3
HUF75852G3 ..IPB100N04S2L-03
IPB100N04S3-03 ..IPD50N06S4L-08
IPD50N06S4L-12 ..IPP052N06L3G
IPP052NE7N3G ..IPW60R250CP
IPW60R280C6 ..IRF3709ZCS
IRF3709ZL ..IRF6712S
IRF6713S ..IRF7705
IRF7705G ..IRFB11N50A
IRFB23N15D ..IRFI1310N
IRFI3205 ..IRFP331
IRFP332 ..IRFS130
IRFS131 ..IRFS9642
IRFS9643 ..IRFZ22FI
IRFZ24 ..IRLIZ34A
IRLIZ34G ..ITF86130SK8T
ITF86172SK8T ..IXFH40N50Q
IXFH40N50Q2 ..IXFM42N20
IXFM50N20 ..IXFR40N50Q2
IXFR40N90P ..IXFX38N80Q2
IXFX40N90P ..IXTC13N50
IXTC160N10T ..IXTH96N20P
IXTH96N25T ..IXTP4N80P
IXTP50N085T ..IXTU2N80P
IXTU4N60P ..KF5N53F
KF5N53FS ..KP723A
KP723AM ..MKE11R600DCGFC
MLD1N06CL ..MTC5806Q8
MTC8402S6R ..MTN4N65FP
MTN4N65I3 ..NDC632P
NDC651N ..NTD6416ANL
NTD70N03R ..NX3008PBKS
NX3008PBKT ..PMG85XP
PMGD280UN ..PSMN5R8-30LL
PSMN5R8-40YS ..RFG45N06
RFG45N06LE ..RJK1526DPJ
RJK1529DPK ..RSJ300N10
RSJ400N06 ..SDF4N100JAA
SDF4N100JAB ..SGSP382
SGSP461 ..SML1001R1BN
SML1001R1HN ..SML8030CFN
SML8075AN ..SPW12N50C3
SPW15N60C3 ..SSI1N50A
SSI1N60A ..SSM6K31FE
SSM6K32TU ..STB100NF04
STB10NK60Z ..STD26NF10
STD27N3LH5 ..STF20NK50Z
STF20NM60D ..STL15DN4F5
STL15N3LLH5 ..STP30NM30N
STP30NM50N ..STP8NK80ZFP
STP8NM50 ..STW25NM60ND
STW26NM50 ..TK1P90A
TK1Q90A ..TPC8059-H
TPC8060-H ..TPCL4203
TPCM8001-H ..UT9971P
UTC654 ..ZVP3310A
ZVP3310F ..ZXMS6006SG
 
2N7000 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7000 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7000

Type of 2N7000 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7000 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 60

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO226

Equivalent transistors for 2N7000

2N7000 PDF doc:

1.1. 2n7000r3.pdf Size:77K _motorola

2N7000
2N7000
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29–04, STYLE 22 Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO–92 (TO–226AA) Gate–Source Voltage — Continuous VGS ±20 Vdc — Non–repetitive (tp ? 50 µs) VGSM ±40 Vpk Drain Current mAdc Continuous ID 200 Pulsed IDM 500 Total Power Dissipation @ TC = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R?JA 357 °C/W Maximum Lead Temperature for TL 300 °C Soldering Purposes, 1/16? from case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V

1.2. 2n7000-03.pdf Size:274K _philips

2N7000
2N7000
2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator. c c 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain (d) d 2 gate (g) 3 source (s) g 03ab40 03ab30 3 2 1 s SOT54 (TO-92 variant) N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 °C - 60 V ID drain curre

1.3. 2n7000_2n7002.pdf Size:626K _st

2N7000
2N7000
2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 ¦ Low Qg ¦ Low threshold drive SOT23-3L TO-92 Application ¦ Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT23-3L TO-92 Table 1. Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4. 2n7000.pdf Size:94K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.5. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.6. 2n7000bu.pdf Size:85K _fairchild_semi

2N7000
2N7000
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25?) 200 ID mA Continuous Drain Current (TC=100?) 110 IDM Drain Current-Pulsed ? 1000 mA VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25?) 400 mW PD Linear Derating Factor 3.2 mW/? Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R?JA Junction-to-Ambient -- 312.5 ?/W Rev. B N-CHANNEL 2N7000BU/2N7000TA Small Signal MOSFET Electrical Characteristics (TC=25? unless otherwise s

1.7. 2n7000.pdf Size:443K _samsung

2N7000
2N7000
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 200 ID mA Continuous Drain Current (TC=100 ) 110 IDM Drain Current-Pulsed mA 1000 VGS Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25 ) mW 400 PD Linear Derating Factor 3.2 mW/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R JA Junction-to-Ambient - 312.5 /W N-CHANNEL SmaII SignaI MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max

1.8. 2n7000kl_bs170kl.pdf Size:93K _vishay

2N7000
2N7000
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free • ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems TO-226AA TO-92-18RM D (TO-92) (TO-18 Lead Form) 1 1 Device Marking S D Device Marking Front View Front View 100 G “S” 2N “S” BS G G 2 7000KL 2 170KL xxyy xxyy “S” = Siliconix Logo “S” = Siliconix Logo D S 3 xxyy = Date Code 3 xxyy = Date Code Top View Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Dra

1.9. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

2N7000
2N7000
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2.5 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 2.1 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low Input Capacitance: 22 pF D Easily Driven Without Buffer D Battery Operated Systems D Fast Switching Speed: 7 ns D High-Speed Circuits D Solid-State Relays D Low Input and Output Leakage D Low Error Voltage TO-226AA TO-236 (TO-92) (SOT-23) 1 S G 1 G 2 3 D S 2 D 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Cod

1.10. 2n7000g.pdf Size:92K _onsemi

2N7000
2N7000
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable 60 VOLTS • This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 40 Vpk Drain Current mAdc - Continuous ID 200 - Pulsed IDM 500 TO-92 Total Power Dissipation @ TC = 25°C PD 350 mW CASE 29 Derate above 25°C 2.8 mW/°C STYLE 22 Operating and Storage Temperature TJ, Tstg -55 to +150 °C 1 Range 1 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 357 °C/W Maximum Lead Temperature for TL 300 °C MARKING DIAGRAM Soldering Purposes, 1/16? from case AND PIN ASSIGNMENT for 10 seconds Stresses exceeding Maxim

1.11. 2n7000z.pdf Size:150K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000ZL-T92-B 2N7000ZG-T92-B TO-92 S G D Tape Box 2N7000ZL-T92-K 2N7000ZG-T92-K TO-92 S G D Bulk 2N7000ZL-T92-R 2N7000ZG-T92-R TO-92

1.12. 2n7000.pdf Size:355K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000L-T92-B 2N7000G-T92-B TO-92 S G D Tape Box 2N7000L-T92-K 2N7000G-T92-K TO-92 S G D Bulk 2N7000L-T92-R 2N7000G-T92-R TO-92 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: So

1.13. 2n7000k.pdf Size:201K _auk

2N7000
2N7000
2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7000K 2N7000K TO-92 Tape Marking Information 2N 7000K Column 1,2 : Device Code Column 3 : Production Information YWW e.g.) YWW -. YWW : Date Code(year,week) Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 500 mA Pulsed drain current (Note 1) IDP 2 A Power dissipation (Note 2) PD 625 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient

1.14. 2n7000.pdf Size:358K _secos

2N7000
2N7000
2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - Source b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Ratings Unit V Drain-Source Voltage 60 VDS Gate-Source Voltage ±20 -Continuous VGS V ? ±40 -Non-Repetitive (tp 50us) VGSM V Drain Current ID 200 mA -Continuous IDM 500 -Pulsed mA Power Dissipation - TA=25o C W 0.35 PD 25o -Derate Above C 2.8 mW/ o C o Thermal Resistance, Junction-To-Ambient R?JA 357 C /W o Tj, Tstg -55~+150 C Operating Junction and Storage Temperature Range Max. Le

1.15. tsm2n7000.pdf Size:85K _taiwansemi

2N7000
2N7000

1.16. 2n7000k.pdf Size:67K _kec

2N7000
2N7000
2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 CHARACTERISTIC SYMBOL RATING UNIT M 0.45 MAX N 1.00 VDSS Drain-Source Voltage 60 V 1 2 3 VGSS Gate-Source Voltage V 20 1. SOURCE 2. GATE ID Continuous 500 3. DRAIN Drain Current mA IDP Pulsed (Note 1) 2000 PD Drain Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Break

1.17. 2n7000.pdf Size:63K _kec

2N7000
2N7000
2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VGSS Gate-Source Voltage V 1 2 3 20 ID Continuous 500 1. SOURCE Drain Current mA 2. GATE IDP Pulsed(Note 1) 2000 3. DRAIN PD Drain Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

1.18. 2n7000a.pdf Size:61K _kec

2N7000
2N7000
2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VDGR Drain-Gate Voltage (RGS?1?) 60 V 1 2 3 VGSS ±20 Gate-Source Voltage V 1. SOURCE 2. GATE ID Continuous 200 3. DRAIN Drain Current mA IDP Pulsed 500 PD Drain Power Dissipation 400 mW TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25?) CHAR

1.19. 2n7000.pdf Size:239K _lge

2N7000
2N7000
2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 200 mA PD Power Dissipation 350 mW Thermal Resistance, junction to Ambient R?JA 357 ?/W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10?A 60 V Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8 Gate-body Leakage lGSS VDS=0 V, VGS=В±15 V В±10 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=4.5 V, VDS=10 V 75 mA VGS=4.5V, ID=75mA 6 D

1.20. 2n7000.pdf Size:168K _wietron

2N7000
2N7000
WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 200 mA Pulsed Drain Current(1) IDM 500 mA Power Dissipation (TA=25 C) PD 350 mW Maximax Junction-to-Ambient R ?JA 357 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7000=7000 Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw 2N7000 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Max Unit Characteristic Static Drain-Source Breakdown Voltage V V(BR)DSS - 60 VGS=0V, I =10 uA D Gate-Threshold Voltage VG

1.21. h2n7000.pdf Size:51K _hsmc

2N7000
2N7000
Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) BVDSS Drain to

See also transistors datasheet: 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , IRF630 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 , 2N7005 , 2N7006 , 2N7007 .

Keywords

 2N7000 Datasheet  2N7000 Datenblatt  2N7000 RoHS  2N7000 Distributor
 2N7000 Application Notes  2N7000 Component  2N7000 Circuit  2N7000 Schematic
 2N7000 Equivalent  2N7000 Cross Reference  2N7000 Data Sheet  2N7000 Fiche Technique

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