MOSFET Datasheet


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2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP3055A
MTP3055AFI ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF130JAA-S
SDF130JAA-U ..SFU9024
SFU9034 ..SMK0270F
SMK0460F ..SML601R3BN
SML601R3CN ..SPP02N60C3
SPP02N60S5 ..SSG9435
SSG9435BDY ..SSM3K48FU
SSM3K7002AF ..SSS1N50A
SSS1N60A ..STD12N05L
STD12N05L-1 ..STE250NS10
STE26N50 ..STI55NF03L
STI6N62K3 ..STP200NF04
STP200NF04L ..STP6N60FI
STP6N62K3 ..STV60N05
STV60N05-16 ..TK11A60D
TK11A65D ..TPC6105
TPC6106 ..TPCA8121
TPCA8128 ..UT3401
UT3401Z ..ZVN0120A
ZVN0124A ..ZXMS6002G
ZXMS6003G ..ZXMS6006SG
 
2N7000 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7000 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7000

Type of 2N7000 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7000 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 60

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO226

Equivalent transistors for 2N7000

2N7000 PDF doc:

1.1. 2n7000r3.pdf Size:77K _motorola

2N7000
2N7000
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 29–04, STYLE 22 Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO–92 (TO–226AA) Gate–Source Voltage — Continuous VGS ±20 Vdc — Non–repetitive (tp ? 50 µs) VGSM ±40 Vpk Drain Current mAdc Continuous ID 200 Pulsed IDM 500 Total Power Dissipation @ TC = 25°C PD 350 mW Derate above 25°C 2.8 mW/°C Operating and Storage Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R?JA 357 °C/W Maximum Lead Temperature for TL 300 °C Soldering Purposes, 1/16? from case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V

1.2. 2n7000-03.pdf Size:274K _philips

2N7000
2N7000
2N7000 N-channel enhancement mode field-effect transistor Rev. 03 — 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS™ technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator. c c 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain (d) d 2 gate (g) 3 source (s) g 03ab40 03ab30 3 2 1 s SOT54 (TO-92 variant) N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 °C - 60 V ID drain curre

1.3. 2n7000_2n7002.pdf Size:626K _st

2N7000
2N7000
2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 ¦ Low Qg ¦ Low threshold drive SOT23-3L TO-92 Application ¦ Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT23-3L TO-92 Table 1. Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4. 2n7000.pdf Size:94K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.5. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.6. 2n7000bu.pdf Size:85K _fairchild_semi

2N7000
2N7000
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25?) 200 ID mA Continuous Drain Current (TC=100?) 110 IDM Drain Current-Pulsed ? 1000 mA VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25?) 400 mW PD Linear Derating Factor 3.2 mW/? Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R?JA Junction-to-Ambient -- 312.5 ?/W Rev. B N-CHANNEL 2N7000BU/2N7000TA Small Signal MOSFET Electrical Characteristics (TC=25? unless otherwise s

1.7. 2n7000.pdf Size:443K _samsung

2N7000
2N7000
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 200 ID mA Continuous Drain Current (TC=100 ) 110 IDM Drain Current-Pulsed mA 1000 VGS Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25 ) mW 400 PD Linear Derating Factor 3.2 mW/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R JA Junction-to-Ambient - 312.5 /W N-CHANNEL SmaII SignaI MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max

1.8. 2n7000kl_bs170kl.pdf Size:93K _vishay

2N7000
2N7000
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free • ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 • Direct Logic-Level Interface: TTL/CMOS • Solid-State Relays • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. • Battery Operated Systems TO-226AA TO-92-18RM D (TO-92) (TO-18 Lead Form) 1 1 Device Marking S D Device Marking Front View Front View 100 G “S” 2N “S” BS G G 2 7000KL 2 170KL xxyy xxyy “S” = Siliconix Logo “S” = Siliconix Logo D S 3 xxyy = Date Code 3 xxyy = Date Code Top View Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Dra

1.9. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

2N7000
2N7000
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2.5 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 2.1 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low Input Capacitance: 22 pF D Easily Driven Without Buffer D Battery Operated Systems D Fast Switching Speed: 7 ns D High-Speed Circuits D Solid-State Relays D Low Input and Output Leakage D Low Error Voltage TO-226AA TO-236 (TO-92) (SOT-23) 1 S G 1 G 2 3 D S 2 D 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Cod

1.10. 2n7000g.pdf Size:92K _onsemi

2N7000
2N7000
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable 60 VOLTS • This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS ± 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM ± 40 Vpk Drain Current mAdc - Continuous ID 200 - Pulsed IDM 500 TO-92 Total Power Dissipation @ TC = 25°C PD 350 mW CASE 29 Derate above 25°C 2.8 mW/°C STYLE 22 Operating and Storage Temperature TJ, Tstg -55 to +150 °C 1 Range 1 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 357 °C/W Maximum Lead Temperature for TL 300 °C MARKING DIAGRAM Soldering Purposes, 1/16? from case AND PIN ASSIGNMENT for 10 seconds Stresses exceeding Maxim

1.11. 2n7000z.pdf Size:150K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000ZL-T92-B 2N7000ZG-T92-B TO-92 S G D Tape Box 2N7000ZL-T92-K 2N7000ZG-T92-K TO-92 S G D Bulk 2N7000ZL-T92-R 2N7000ZG-T92-R TO-92

1.12. 2n7000.pdf Size:355K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000L-T92-B 2N7000G-T92-B TO-92 S G D Tape Box 2N7000L-T92-K 2N7000G-T92-K TO-92 S G D Bulk 2N7000L-T92-R 2N7000G-T92-R TO-92 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: So

1.13. 2n7000k.pdf Size:201K _auk

2N7000
2N7000
2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7000K 2N7000K TO-92 Tape Marking Information 2N 7000K Column 1,2 : Device Code Column 3 : Production Information YWW e.g.) YWW -. YWW : Date Code(year,week) Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 500 mA Pulsed drain current (Note 1) IDP 2 A Power dissipation (Note 2) PD 625 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient

1.14. 2n7000.pdf Size:358K _secos

2N7000
2N7000
2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - Source b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Ratings Unit V Drain-Source Voltage 60 VDS Gate-Source Voltage ±20 -Continuous VGS V ? ±40 -Non-Repetitive (tp 50us) VGSM V Drain Current ID 200 mA -Continuous IDM 500 -Pulsed mA Power Dissipation - TA=25o C W 0.35 PD 25o -Derate Above C 2.8 mW/ o C o Thermal Resistance, Junction-To-Ambient R?JA 357 C /W o Tj, Tstg -55~+150 C Operating Junction and Storage Temperature Range Max. Le

1.15. tsm2n7000.pdf Size:85K _taiwansemi

2N7000
2N7000

1.16. 2n7000k.pdf Size:67K _kec

2N7000
2N7000
2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 CHARACTERISTIC SYMBOL RATING UNIT M 0.45 MAX N 1.00 VDSS Drain-Source Voltage 60 V 1 2 3 VGSS Gate-Source Voltage V 20 1. SOURCE 2. GATE ID Continuous 500 3. DRAIN Drain Current mA IDP Pulsed (Note 1) 2000 PD Drain Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Break

1.17. 2n7000.pdf Size:63K _kec

2N7000
2N7000
2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VGSS Gate-Source Voltage V 1 2 3 20 ID Continuous 500 1. SOURCE Drain Current mA 2. GATE IDP Pulsed(Note 1) 2000 3. DRAIN PD Drain Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

1.18. 2n7000a.pdf Size:61K _kec

2N7000
2N7000
2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VDGR Drain-Gate Voltage (RGS?1?) 60 V 1 2 3 VGSS ±20 Gate-Source Voltage V 1. SOURCE 2. GATE ID Continuous 200 3. DRAIN Drain Current mA IDP Pulsed 500 PD Drain Power Dissipation 400 mW TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25?) CHAR

1.19. 2n7000.pdf Size:239K _lge

2N7000
2N7000
2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 200 mA PD Power Dissipation 350 mW Thermal Resistance, junction to Ambient R?JA 357 ?/W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10?A 60 V Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8 Gate-body Leakage lGSS VDS=0 V, VGS=В±15 V В±10 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=4.5 V, VDS=10 V 75 mA VGS=4.5V, ID=75mA 6 D

1.20. 2n7000.pdf Size:168K _wietron

2N7000
2N7000
WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 200 mA Pulsed Drain Current(1) IDM 500 mA Power Dissipation (TA=25 C) PD 350 mW Maximax Junction-to-Ambient R ?JA 357 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7000=7000 Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw 2N7000 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Max Unit Characteristic Static Drain-Source Breakdown Voltage V V(BR)DSS - 60 VGS=0V, I =10 uA D Gate-Threshold Voltage VG

1.21. h2n7000.pdf Size:51K _hsmc

2N7000
2N7000
Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) BVDSS Drain to

See also transistors datasheet: 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , IRF630 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 , 2N7005 , 2N7006 , 2N7007 .

Keywords

 2N7000 Datasheet  2N7000 Datenblatt  2N7000 RoHS  2N7000 Distributor
 2N7000 Application Notes  2N7000 Component  2N7000 Circuit  2N7000 Schematic
 2N7000 Equivalent  2N7000 Cross Reference  2N7000 Data Sheet  2N7000 Fiche Technique

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