MOSFET Datasheet



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2N7000
  2N7000
  2N7000
  2N7000
 
2N7000
  2N7000
  2N7000
  2N7000
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
2N7000 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7000 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7000

Type of 2N7000 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.4

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 0.2

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7000 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 60

Maximum drain-source on-state resistance (Rds), Ohm: 5

Package: TO226

Equivalent transistors for 2N7000 - Cross-Reference Search

2N7000 PDF doc:

1.1. 2n7000r3.pdf Size:77K _motorola

2N7000
2N7000
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7000/D TMOS FET Transistor 2N7000 NChannel Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 3 Drain Source Voltage VDSS 60 Vdc CASE 2904, STYLE 22 DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc TO92 (TO226AA) GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp ? 50 s) VGSM 40 Vpk Drain Current mAdc Continuous ID 200 Pulsed IDM 500 Total Power Dissipation @ TC = 25C PD 350 mW Derate above 25C 2.8 mW/C Operating and Storage Temperature Range TJ, Tstg 55 to +150 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R?JA 357 C/W Maximum Lead Temperature for TL 300 C Soldering Purposes, 1/16? from case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V

1.2. 2n7000-03.pdf Size:274K _philips

2N7000
2N7000
2N7000 N-channel enhancement mode field-effect transistor Rev. 03 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOS technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator. c c 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description Simplified outline Symbol 1 drain (d) d 2 gate (g) 3 source (s) g 03ab40 03ab30 3 2 1 s SOT54 (TO-92 variant) N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 C - 60 V ID drain curre

1.3. 2n7000_2n7002.pdf Size:626K _st

2N7000
2N7000
2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT23-3L TO-92 Table 1. Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.4. 2n7000ta.pdf Size:84K _fairchild_semi

2N7000
2N7000
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 Ω n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25℃) 200 ID mA Continuous Drain Current (TC=100℃) 110 IDM Drain Current-Pulsed ① 1000 mA VGS Gate-to-Source Voltage ±30 V Total Power Dissipation (TC=25℃) 400 mW PD Linear Derating Factor 3.2 mW/℃ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ℃ Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units RθJA Junction-to-Ambient -- 312.5 ℃/W Rev. B N-CHANNEL 2N7000BU/2N7000TA Small Signal MOSFET Electrical Characteristics (TC=25

1.5. 2n7000.pdf Size:94K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.6. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

2N7000
2N7000
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.7. 2n7000bu.pdf Size:85K _fairchild_semi

2N7000
2N7000
Advanced Small Signal MOSFET 2N7000BU/2N7000TA FEATURES BVDSS = 60 V n Fast Switching Times RDS(on) = 5.0 ? n Improved Inductive Ruggedness n Lower Input Capacitance ID = 200 mA n Extended Safe Operating Area n Improved High Temperature Reliability TO-92 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25?) 200 ID mA Continuous Drain Current (TC=100?) 110 IDM Drain Current-Pulsed ? 1000 mA VGS Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25?) 400 mW PD Linear Derating Factor 3.2 mW/? Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R?JA Junction-to-Ambient -- 312.5 ?/W Rev. B N-CHANNEL 2N7000BU/2N7000TA Small Signal MOSFET Electrical Characteristics (TC=25? unless otherwise s

1.8. 2n7000.pdf Size:443K _samsung

2N7000
2N7000
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Fast Switching Times RDS(on) = 5.0 Improved Inductive Ruggedness Lower Input Capacitance ID = 200 mA Extended Safe Operating Area Improved High Temperature Reliability TO-92 1 2 3 1.Source 2. Gate 3. Drain Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 60 Continuous Drain Current (TC=25 ) 200 ID mA Continuous Drain Current (TC=100 ) 110 IDM Drain Current-Pulsed mA 1000 VGS Gate-to-Source Voltage 30 V Total Power Dissipation (TC=25 ) mW 400 PD Linear Derating Factor 3.2 mW/ Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R JA Junction-to-Ambient - 312.5 /W N-CHANNEL SmaII SignaI MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ. Max

1.9. 2n7000kl_bs170kl.pdf Size:93K _vishay

2N7000
2N7000
2N7000KL/BS170KL Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) (?) VGS(th) (V) ID (A) Pb-free ESD Protected: 2000 V Available 2 at VGS = 10 V 0.47 60 1.0 to 2.5 RoHS* APPLICATIONS COMPLIANT 4 at VGS = 4.5 V 0.33 Direct Logic-Level Interface: TTL/CMOS Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems TO-226AA TO-92-18RM D (TO-92) (TO-18 Lead Form) 1 1 Device Marking S D Device Marking Front View Front View 100 G S 2N S BS G G 2 7000KL 2 170KL xxyy xxyy S = Siliconix Logo S = Siliconix Logo D S 3 xxyy = Date Code 3 xxyy = Date Code Top View Top View S Ordering Information: 2N7000KL-TR1 Ordering Information: BS170KL-TR1 2N7000KL-TR1-E3 (Lead (Pb)-free) BS170KL-TR1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol Limit Unit Dra

1.10. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

2N7000
2N7000
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2.5 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 2.1 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low Input Capacitance: 22 pF D Easily Driven Without Buffer D Battery Operated Systems D Fast Switching Speed: 7 ns D High-Speed Circuits D Solid-State Relays D Low Input and Output Leakage D Low Error Voltage TO-226AA TO-236 (TO-92) (SOT-23) 1 S G 1 G 2 3 D S 2 D 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Cod

1.11. 2n7000g.pdf Size:92K _onsemi

2N7000
2N7000
2N7000G Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com AEC Qualified 200 mAMPS PPAP Capable 60 VOLTS This is a Pb-Free Device* RDS(on) = 5 W N-Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc G Gate-Source Voltage - Continuous VGS 20 Vdc S - Non-repetitive (tp ? 50 ms) VGSM 40 Vpk Drain Current mAdc - Continuous ID 200 - Pulsed IDM 500 TO-92 Total Power Dissipation @ TC = 25C PD 350 mW CASE 29 Derate above 25C 2.8 mW/C STYLE 22 Operating and Storage Temperature TJ, Tstg -55 to +150 C 1 Range 1 2 2 3 3 THERMAL CHARACTERISTICS STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL Characteristic Symbol Max Unit AMMO PACK Thermal Resistance, Junction-to-Ambient RqJA 357 C/W Maximum Lead Temperature for TL 300 C MARKING DIAGRAM Soldering Purposes, 1/16? from case AND PIN ASSIGNMENT for 10 seconds Stresses exceeding Maxim

1.12. 2n7000z.pdf Size:150K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000Z Power MOSFET 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION 1 The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching TO-92 performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000ZL-T92-B 2N7000ZG-T92-B TO-92 S G D Tape Box 2N7000ZL-T92-K 2N7000ZG-T92-K TO-92 S G D Bulk 2N7000ZL-T92-R 2N7000ZG-T92-R TO-92

1.13. 2n7000.pdf Size:355K _utc

2N7000
2N7000
UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1 resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is TO-92 particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications FEATURES *High density cell design for low R DS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7000L-T92-B 2N7000G-T92-B TO-92 S G D Tape Box 2N7000L-T92-K 2N7000G-T92-K TO-92 S G D Bulk 2N7000L-T92-R 2N7000G-T92-R TO-92 S G D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: So

1.14. 2n7000k.pdf Size:201K _auk

2N7000
2N7000
2N7000K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? Halogen free and RoHS compliant device S G D TO-92 Applications ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7000K 2N7000K TO-92 Tape Marking Information 2N 7000K Column 1,2 : Device Code Column 3 : Production Information YWW e.g.) YWW -. YWW : Date Code(year,week) Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 500 mA Pulsed drain current (Note 1) IDP 2 A Power dissipation (Note 2) PD 625 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient

1.15. 2n7000.pdf Size:358K _secos

2N7000
2N7000
2N7000 ? 200mA,60V,RDS(ON) 6 Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product TO-92 D Description E S1 The 2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drives. b1 SEATING PLANE C e1 b e Drain Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 4.45 4.7 D 4.44 4.7 S1 1.02 - E 3.30 3.81 b 0.36 0.51 L 12.70 - Source b1 0.36 0.76 e1 1.150 1.390 C 0.36 0.51 e 2.42 2.66 Absolute Maximum Ratings Parameter Symbol Ratings Unit V Drain-Source Voltage 60 VDS Gate-Source Voltage ±20 -Continuous VGS V ? ±40 -Non-Repetitive (tp 50us) VGSM V Drain Current ID 200 mA -Continuous IDM 500 -Pulsed mA Power Dissipation - TA=25o C W 0.35 PD 25o -Derate Above C 2.8 mW/ o C o Thermal Resistance, Junction-To-Ambient R?JA 357 C /W o Tj, Tstg -55~+150 C Operating Junction and Storage Temperature Range Max. Le

1.16. tsm2n7000.pdf Size:85K _taiwansemi

2N7000
2N7000

1.17. 2n7000k.pdf Size:67K _kec

2N7000
2N7000
2N7000K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. B C FEATURES ESD Protected 2000V. High density cell design for low RDS(ON). Voltage controlled small signal switch. N DIM MILLIMETERS Rugged and reliable. A 4.70 MAX E K B 4.80 MAX High saturation current capablity. G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ MAXIMUM RATING (Ta=25 ) H J 14.00 + 0.50 K 0.55 MAX F F L 2.30 CHARACTERISTIC SYMBOL RATING UNIT M 0.45 MAX N 1.00 VDSS Drain-Source Voltage 60 V 1 2 3 VGSS Gate-Source Voltage V 20 1. SOURCE 2. GATE ID Continuous 500 3. DRAIN Drain Current mA IDP Pulsed (Note 1) 2000 PD Drain Power Dissipation 625 mW TO-92 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT BVDSS Drain-Source Break

1.18. 2n7000.pdf Size:63K _kec

2N7000
2N7000
2N7000 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. N DIM MILLIMETERS High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VGSS Gate-Source Voltage V 1 2 3 20 ID Continuous 500 1. SOURCE Drain Current mA 2. GATE IDP Pulsed(Note 1) 2000 3. DRAIN PD Drain Power Dissipation 625 mW Tj Junction Temperature 150 TO-92 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% EQUIVALENT CIRCUIT D G S PLEASE HANDLE WITH CAUTION. THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERIS

1.19. 2n7000a.pdf Size:61K _kec

2N7000
2N7000
2N7000A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. B C FEATURES ·High density cell design for low RDS(ON). ·Voltage controolled small signal switch. ·Rugged and reliable. N DIM MILLIMETERS ·High saturation current capablity. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25?) H 0.45 _ H J 14.00 + 0.50 CHARACTERISTIC SYMBOL RATING UNIT K 0.55 MAX F F L 2.30 VDSS Drain-Source Voltage 60 V M 0.45 MAX N 1.00 VDGR Drain-Gate Voltage (RGS?1?) 60 V 1 2 3 VGSS ±20 Gate-Source Voltage V 1. SOURCE 2. GATE ID Continuous 200 3. DRAIN Drain Current mA IDP Pulsed 500 PD Drain Power Dissipation 400 mW TO-92 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range EQUIVALENT CIRCUIT D G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25?) CHAR

1.20. 2n7000.pdf Size:239K _lge

2N7000
2N7000
2N7000 Mosfet (N-Channel) TO-92 1. SOURCE 2. GATE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters) ID Drain Current 200 mA PD Power Dissipation 350 mW Thermal Resistance, junction to Ambient R?JA 357 ?/W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10?A 60 V Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8 Gate-body Leakage lGSS VDS=0 V, VGS=В±15 V В±10 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=4.5 V, VDS=10 V 75 mA VGS=4.5V, ID=75mA 6 D

1.21. 2n7000.pdf Size:168K _wietron

2N7000
2N7000
WEITRON 2N7000 Small Signal MOSFET N-Channel 3 DRAIN TO-92 Features: 2 1 *Low On-Resistance : 5 ? GATE 1. SOURCE 2 3 *Low Input Capacitance: 60PF 2. GATE 3. DRAIN *Low Out put Capacitance : 25PF 1 SOURCE *Low Threshole :1.4V(TYE) *Fast Switching Speed : 10ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 200 mA Pulsed Drain Current(1) IDM 500 mA Power Dissipation (TA=25 C) PD 350 mW Maximax Junction-to-Ambient R ?JA 357 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7000=7000 Note 1: Pulse Width Limited by Maximum Junction Temperature WEITRON http://www.weitron.com.tw 2N7000 Electrical Characteristics (TA=25 C Unless otherwise noted) Symbol Min Max Unit Characteristic Static Drain-Source Breakdown Voltage V V(BR)DSS - 60 VGS=0V, I =10 uA D Gate-Threshold Voltage VG

1.22. h2n7000.pdf Size:51K _hsmc

2N7000
2N7000
Spec. No. : HE6267 HI-SINCERITY Issued Date : 1993.09.17 Revised Date : 2006.08.10 MICROELECTRONICS CORP. Page No. : 1/5 H2N7000 N-Channel Enhancement Mode Transistor Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) BVDSS Drain to

See also transistors datasheet: 2N6967JANTX , 2N6967JANTXV , 2N6968 , 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , IRF630 , 2N7000P , 2N7001 , 2N7002 , 2N7002L , 2N7004 , 2N7005 , 2N7006 , 2N7007 .

Keywords

 2N7000 Datasheet  2N7000 Datenblatt  2N7000 RoHS  2N7000 Distributor
 2N7000 Application Notes  2N7000 Component  2N7000 Circuit  2N7000 Schematic
 2N7000 Equivalent  2N7000 Cross Reference  2N7000 Data Sheet  2N7000 Fiche Technique

 

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