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AOT7S65 MOSFET (IC) Datasheet. Cross Reference Search. AOT7S65 Equivalent

Type Designator: AOT7S65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 104

Maximum Drain-Source Voltage |Vds|, V: 650

Maximum Gate-Source Voltage |Vgs|, V: 30

Maximum Drain Current |Id|, A: 7

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS: 14

Drain-Source Capacitance (Cd), pF: 30

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.65

Package: TO-220

AOT7S65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOT7S65 PDF doc:

1.1. aot7s65.pdf Size:302K _aosemi

AOT7S65
AOT7S65

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65Ω performance and robustness in switching applications. Qg,typ 9.2nC By providing low

4.1. aot7s60.pdf Size:288K _aosemi

AOT7S65
AOT7S65

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6Ω performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

See also transistors datasheet: AOT502 , AOT5N100 , AOT5N50 , AOT5N60 , AOT7N60 , AOT7N65 , AOT7N70 , AOT7S60 , APT50M38JLL , AOT8N50 , AOT8N60 , AOT8N65 , AOT8N80 , AOT9N40 , AOT9N50 , AOT9N70 , AOTF10N50FD .

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