MOSFET Datasheet


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2N7002
  2N7002
  2N7002
 
2N7002
  2N7002
  2N7002
 
2N7002
  2N7002
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..NDB4050
NDB4050L ..NTD4813NH
NTD4815N ..NTTFS5820NL
NTTFS5826NL ..PHX6NA60E
PHX6ND50E ..PSMN2R6-30YLC
PSMN2R6-40YS ..RFD14N06L
RFD14N06LSM ..RJK0652DPB
RJK0653DPB ..RQM2201DNS
RRF015P03 ..SDF20N60JEC
SDF20N60JED ..SFW9640
SFW9644 ..SMK0965FC
SMK0965FJ ..SML6070BN
SML6070CN ..SPP11N65C3
SPP11N80C3 ..SSH25N35A
SSH25N40 ..SSM6J08FU
SSM6J205FE ..SSS70N10A
SSS7N60A ..STD15N06L-1
STD15N06LT4 ..STF10N62K3
STF10N65K3 ..STK17N10
STK18N05 ..STP21N05LFI
STP21N06L ..STP78N75F4
STP7N20 ..STW13N95K3
STW13NK100Z ..TK13A55DA
TK13A60D ..TPC8018-H
TPC8020-H ..TPCC8064-H
TPCC8065-H ..UT4406
UT4410 ..ZVN4206AV
ZVN4206G ..ZXMS6006SG
 
2N7002 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7002 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7002

Type of 2N7002 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.2

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 0.115

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7002 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 7.5

Package: SOT23

Equivalent transistors for 2N7002

2N7002 PDF doc:

1.1. 2n7002lt1.pdf Size:98K _motorola

2N7002
2N7002
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1) ID 115 mAdc Drain Current Continuous TC = 100C(1) ID 75 Drain Current Pulsed(2) IDM 800 GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp ? 50 s) VGSM 40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board,(3) TA = 25C PD 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient R?JA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(4) TA = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient R?JA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150

1.2. 2n7002lt1rev2.pdf Size:94K _motorola

2N7002
2N7002
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN NChannel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDSS 60 Vdc CASE 31808, STYLE 21 SOT23 (TO236AB) DrainGate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current Continuous TC = 25C(1) ID 115 mAdc Drain Current Continuous TC = 100C(1) ID 75 Drain Current Pulsed(2) IDM 800 GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp ? 50 s) VGSM 40 Vpk THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board,(3) TA = 25C PD 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient R?JA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate,(4) TA = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient R?JA 417 C/W Junction and Storage Temperature TJ, Tstg 55 to +150

1.3. 2n7002.pdf Size:87K _philips

2N7002
2N7002
2N7002 N-channel TrenchMOS FET Rev. 06 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed line driver 1.4 Quick reference data VDS ? 60 V ID ? 300 mA RDSon ? 5 ? Ptot ? 0.83 W 2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 12 mbb076 S SOT23 2N7002 Philips Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version 2N7002 TO-236AB plastic surface mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter

1.4. 2n7002e.pdf Size:92K _philips

2N7002
2N7002
2N7002E N-channel TrenchMOS FET Rev. 03 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed line driver 1.4 Quick reference data VDS ? 60 V ID ? 385 mA RDSon ? 3 ? Ptot ? 0.83 W 2. Pinning information Table 1: Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 12 mbb076 S SOT23 2N7002E Philips Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version 2N7002E TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Paramet

1.5. 2n7002ps.pdf Size:354K _philips

2N7002
2N7002
2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tamb =25C- - 60 V VGS gate-source voltage Tamb =25C- - 20 V [1] ID drain current Tamb =25C; - - 320 mA VGS =10V RDSon drain-source on-state Tj =25 C; - 1 1.6 ? resistance VGS =10V; ID = 500 mA [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1

1.6. 2n7002pt.pdf Size:306K _philips

2N7002
2N7002
2N7002PT 60 V, 310 mA N-channel Trench MOSFET Rev. 1 2 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? AEC-Q101 qualified 1.3 Applications ? Relay driver ? High-speed line driver ? Low-side loadswitch ? Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb =25?C- - 60 V VGS gate-source voltage Tamb =25?C- - ?20 V [1] ID drain current Tamb =25?C; - - 310 mA VGS =10V RDSon drain-source on-state Tj =25 ?C; - 1 1.6 ? resistance VGS =10V; ID = 500 mA [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002PT NX

1.7. 2n7002bkt.pdf Size:334K _philips

2N7002
2N7002
2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tamb =25C- - 60 V VGS gate-source voltage Tamb =25C- - 20 V [1] ID drain current Tamb =25C; - - 290 mA VGS =10V RDSon drain-source on-state Tj =25 C; - 1 1.6 ? resistance VGS =10V; ID = 500 mA [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. 2N7002BKT NXP S

1.8. 2n7002ck.pdf Size:76K _philips

2N7002
2N7002
2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage - - 60 V ID drain current - - 300 mA IDM peak drain current single pulse; - - 1.2 A tp ? 10 s RDSon drain-source on-state VGS =10V; - 1.1 1.6 ? resistance ID = 500 mA 2N7002CK NXP Semiconductors 60 V, 0.3 A N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic sy

1.9. 2n7002ka.pdf Size:87K _philips

2N7002
2N7002
2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge (ESD) protection diodes 1.3 Applications Relay driver High-speed line driver 1.4 Quick reference data VDS ? 60 V ID ? 320 mA RDSon ? 4.4 ? Ptot ? 0.83 W 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 12 SOT23 (TO-236AB) S 003aac036 2N7002KA NXP Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2N7002KA TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting values Table 3. Limiting values In accordance with the Absol

1.10. 2n7002pw.pdf Size:148K _philips

2N7002
2N7002
2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tamb = 25 C - - 60 V voltage VGS gate-source -20 - 20 V voltage [1] ID drain current VGS =10V; Tamb =25C - - 310 mA Static characteristics RDSon drain-source VGS =10V; ID =500mA; - 1 1.6 ? on-state Tj =25C; tp ? 300 s; pulsed; resistance ?? 0.01 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

1.11. 2n7002p.pdf Size:311K _philips

2N7002
2N7002
2N7002P 60 V, 360 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source Tamb = 25 C - - 60 V voltage VGS gate-source -20 - 20 V voltage [1] ID drain current VGS =10V; Tamb =25C - - 360 mA Static characteristics RDSon drain-source VGS =10V; ID =500mA; - 1 1.6 ? on-state Tj = 25 C; pulsed; tp ? 300 s; resistance ?? 0.01 [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

1.12. 2n7002-03.pdf Size:276K _philips

2N7002
2N7002
2N7002 N-channel enhancement mode field-effect transistor Rev. 03 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS1 technology. Product availability: 2N7002 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Relay driver High speed line driver c c Logic level translator. 4. Pinning information Table 1: Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 03ab44 03ab30 s 12 SOT23 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7002 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25to150 C - 60 V ID drain

1.13. 2n7000_2n7002.pdf Size:626K _st

2N7002
2N7002
2N7000 2N7002 N-channel 60 V, 1.8 ?, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type VDSS RDS(on) max ID 3 2N7000 60 V < 5 ?(@10V) 0.35 A 2 2N7002 60 V < 5 ?(@10V) 0.20 A 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This Power MOSFET is the second generation of Figure 1. Internal schematic diagram STMicroelectronics unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT23-3L TO-92 Table 1. Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.14. 2n7002v-va.pdf Size:506K _fairchild_semi

2N7002
2N7002
April 2010 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Pin4) SOT-563F Marking : AB Marking : AC * Pin1 and Pin4 are exchangeable. Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 280 mA Pulsed 1.5 A TJ , TSTG Junction and Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 250 mW Derating above TA = 25C 2.0 mW/C R?JA Thermal Resistance, Jun

1.15. 2n7002dw.pdf Size:257K _fairchild_semi

2N7002
2N7002
October 2007 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking : 2N Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/C R?JA Thermal Resistance, Junction to Ambient * 625 C/W * Dev

1.16. 2n7002t.pdf Size:332K _fairchild_semi

2N7002
2N7002
October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT - 523F Marking : AA Absolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ Junction Temperature 150 C TSTG Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/C R?JA Thermal Resistance, Junction to Ambient * 625 C/W * Device mounted on

1.17. 2n7002k.pdf Size:222K _fairchild_semi

2N7002
2N7002
January 2012 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage 20 V ID Drain Current Continuous 300 mA Pulsed 800 TJ Operating Junction Temperature Range -55 to +150 C TSTG Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 350 mW Derating above TA = 25C 2.8 mW/C R?JA Thermal R

1.18. 2n7000_2n7002_nds7002a.pdf Size:109K _fairchild_semi

2N7002
2N7002
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Max

1.19. 2n7002mtf.pdf Size:115K _fairchild_semi

2N7002
2N7002
N-Channel Small Signal MOSFET 2N7002MTF FEATURES BVDSS = 60 V Lower RDS(on) RDS(on) = 5.0 ? Improved Inductive Ruggedness Fast Switching Times ID = 200 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BVDSS RDS(on) ID 2N7002 60V 5.0? 115mA Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current (TC=25?) 115 mA ID Continuous Drain Current (TC=100?) 73 IDM Drain Current-Pulsed ? 800 mA VGS Gate-to-Source Voltage 20 V 0.2 Total Power Dissipation (TC=25?) W PD Linear Derating Factor 1.6 mW/? Operating Junction and ? TJ , TSTG - 55 to +150 Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units R?JA Junction-to-Ambient -- 625 ?/W Rev. C1 N-Channel 2N7002MTF Small Signal MOSFET Electrical Characteristics (TC=25? unless otherwise specified) Symbol C

1.20. 2n7002kw.pdf Size:286K _fairchild_semi

2N7002
2N7002
May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 20 V ID Maximum Drain Current - Continuous 310 mA TJ = 100C 195 mA - Pulsed 1.2 A TJ Operating Junction Temperature Range -55 to +150 C TSTG Storage Temperature Range -55 to +150 C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 300 mW Derating above TA = 25C 2.4 mW/C R?JA Thermal Resistance, Junction to Ambi

1.21. 2n7002w.pdf Size:291K _fairchild_semi

2N7002
2N7002
February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking : 2N Absolute Maximum Ratings * TA = 25C unless otherwise noted Symbol Parameter Value Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage RGS ? 1.0M? 60 V VGSS Gate-Source Voltage Continuous 20 V Pulsed 40 ID Drain Current Continuous 115 Continuous @ 100C 73 mA Pulsed 800 TJ , TSTG Junction and Storage Temperature Range -55 to +150 ?C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units PD Total Device Dissipation 200 mW Derating above TA = 25C 1.6 mW/?C R?JA Thermal Resistance, Junction to Ambient * 625 ?C/W * Device mounted on FR-4 PCB, 1 i

1.22. 2n7002.pdf Size:439K _samsung

2N7002
2N7002
N-CHANNEL SmaII SignaI MOSFET FEATURES BVDSS = 60 V Lower Rds(on) RDS(on) = 5.0 Improved Inductive Ruggedness Fast Switching Times ID = 115 mA Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability 2 1 3 1.Gate 2. Drain 3. Source Product Summary Part Number BVdss Rds(on) ID 115mA 60V 2N7002 5.0 Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 60 V Continuous Drain Current (TC=25 ) 115 ID mA Continuous Drain Current (TC=100 ) 73 IDM Drain Current-Pulsed mA 800 VGS Gate-to-Source Voltage 20 V Total Power Dissipation (TC=25 ) W 0.2 PD Linear Derating Factor 0.16 W/ Operating and Junction Storage TJ , TSTG - 55 to +150 Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units R JA Junction-to-Ambient - 62.5 /W N-CHANNEL SmaII SignaI MOSFET Electrical Characteristics (TC=25 unless otherwise specified) Symbol Characteristic Min. Typ.

1.23. 2n7002e_1.pdf Size:174K _vishay

2N7002
2N7002
2N7002E Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 60 3 at VGS = 10 V 240 Low On-Resistance: 3 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage Compliant to RoHS Directive 2002/95/EC BENEFITS Low Offset Voltage TO-236 Low-Voltage Operation (SOT-23) Easily Driven Without Buffer High-Speed Circuits Marking Code: 7E G 1 Low Error Voltage 3 D APPLICATIONS S 2 Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Top View Memories, Transistors, etc. Battery Operated Systems Ordering Information: 2N7002E-T1-E3 (Lead (Pb)-free) 2N7002E-T1-GE3 (Lead (Pb)-free and Halogen-free) Solid-State Relays ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VDS Drain-Source

1.24. 2n7002k.pdf Size:210K _vishay

2N7002
2N7002
2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 2 at VGS = 10 V 60 300 Low On-Resistance: 2 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET 2000 V ESD Protection Compliant to RoHS Directive 2002/95/EC TO-236 SOT-23 BENEFITS Low Offset Voltage G 1 Low-Voltage Operation Easily Driven Without Buffer 3 D High-Speed Circuits Low Error Voltage S 2 APPLICATIONS Top View Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, 2N7002K (7K)* * Marking Code Memories, Transistors, etc. Battery Operated Systems Ordering Information: 2N7002K-T1 2N7002K-T1-E3 (Lead (Pb)-free) Solid-State Relays 2N7002K-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA

1.25. 2n7000_2n7002_vq1000j-p_ bs170.pdf Size:58K _vishay

2N7002
2N7002
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 2N7000 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 60 VQ1000J 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 2.5 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMOS D Low Threshold: 2.1 V D Low-Voltage Operation D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low Input Capacitance: 22 pF D Easily Driven Without Buffer D Battery Operated Systems D Fast Switching Speed: 7 ns D High-Speed Circuits D Solid-State Relays D Low Input and Output Leakage D Low Error Voltage TO-226AA TO-236 (TO-92) (SOT-23) 1 S G 1 G 2 3 D S 2 D 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code for 2N7002 w = Week Cod

1.26. 2n7002.pdf Size:86K _diodes

2N7002
2N7002
2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Low Input/Output Leakage (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) Terminal Connections: See Diagram "Green" Device (Note 2) Weight: 0.008 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability Drain SOT-23 D Gate G S Source Top View Equivalent Circuit Top View Ordering Information (Note 3) Part Number Case Packaging 2N7002-7-F SOT-23 3000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Product manufactur

1.27. 2n7002e.pdf Size:78K _diodes

2N7002
2N7002
2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Low Gate Threshold Voltage Case Material: UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Terminal Connections: See Diagram Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device (Notes 2 and 4) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate) SOT-23 D G S TOP VIEW TOP VIEW Pin Out Configuration Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Drain-Gate Voltage RGS ? 1.0M? VDGR 60 V Gate-Source Voltage Continuous 20 VGSS V Pulsed 40 Drain C

1.28. 2n7002dw.pdf Size:84K _diodes

2N7002
2N7002
2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Fast Switching Speed (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Terminal Connections: See Diagram Ultra-Small Surface Mount Package Marking Information: See Page 3 Lead Free/RoHS Compliant (Note 2) Ordering Information: See Page 3 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (approximate) "Green" Device (Note 3 and 4) SOT-363 D2 G1 S1 S2 G2 D1 TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25C unless otherwise specified Characteris

1.29. 2n7002t.pdf Size:77K _diodes

2N7002
2N7002
2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Solderable per MIL-STD-202, Method 208 Low Input/Output Leakage Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Ultra-Small Surface Mount Package leadframe). Lead Free/RoHS Compliant (Note 2) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Marking Information: See Page 3 "Green" Device (Notes 3 and 4) Ordering Information: See Page 3 Weight: 0.002 grams (approximate) Drain SOT523 D Gate Top View G S Source Top View Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value

1.30. 2n7002k.pdf Size:161K _diodes

2N7002
2N7002
2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish ? Matte Tin annealed over Alloy 42 Lead, Halogen and Antimony Free, RoHS Compliant "Green" leadframe. Solderable per MIL-STD-202, Method 208 Device (Notes 1 and 2) Terminal Connections: See Diagram ESD Protected Up To 2kV Weight: 0.008 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability Drain SOT-23 D Gate Gate G S Protection Source Diode ESD protected up to 2kV Top View Top View EQUIVALENT CIRCUIT Ordering Information (Note 3) Part Number Qualification Case Packaging 2N7002K-7 Commercial SOT-23 3000/Tape & Reel 2N7002KQ-7 Automotive SOT-23 3000/Tape & Reel

1.31. 2n7002a.pdf Size:147K _diodes

2N7002
2N7002
2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case: SOT-23 Low On-Resistance Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020D Low Input Capacitance Terminals: Solderable per MIL-STD-202, Method 208 Fast Switching Speed Lead Free Plating (Matte Tin Finish annealed over Copper Small Surface Mount Package leadframe). ESD Protected Gate, 1.2kV HBM Terminal Connections: See Diagram Lead, Halogen and Antimony Free, RoHS Compliant Marking Information: See Page 3 "Green" Device (Notes 2 and 4) Ordering Information: See Page 3 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.008 grams (approximate) Drain SOT-23 D Gate G S Gate ESD PROTECTED, 1.2kV Protection Source Diode TOP

1.32. 2n7002vc-vac.pdf Size:124K _diodes

2N7002
2N7002
2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminal Connections: See Diagram (Note 1) Fast Switching Speed Low Input/Output Leakage Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Marking Information: See Page 2 Lead Free By Design/RoHS Compliant (Note 3) Ordering Information: See Page 2 Green Device (Note 4) Weight: 0.003 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability SOT-563 D2 G1 S1 D2 S1 G1 S2 G2 D1 G2 S2 D1 TOP VIEW 2N7002VC 2N7002VAC (ASK Marking Code) (AYK Marking Code) Maximum Ratings

1.33. 2n7002w.pdf Size:120K _diodes

2N7002
2N7002
2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Finish - Matte Tin annealed over Alloy 42 Low Input/Output Leakage leadframe. Solderable per MIL-STD-202, Method 208 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Lead Free/RoHS Compliant (Note 2) Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approximate) SOT-323 Drain D Gate G S Source TOP VIEW TOP VIEW Equivalent Circuit Maximum Ratings @TA = 25C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V

1.34. 2n7002.pdf Size:257K _mcc

2N7002
2N7002
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2N7002 CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Advanced Trench Process Technology High Input Impedance N-Channel MOSFET High Speed Switching CMOS Logic Compatible Input Marking : 7002/S72 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol Rating Rating Unit VDS Drain-source Voltage 60 V SOT-23 ID Drain Current 115 mA A PD Total Power Dissipation 200 mW D Thermal Resistance Junction to Ambient 625 /W R JA 3 TJ Operating Junction Temperature -55 to +150 1.GATE TSTG Storage Temperature -55 to +150 2. SOURCE B C Electrical Characteristics @ 25OC Unless Otherwise Specified 3. DRAIN Symbol Parameter Min Typ Max Units 1 2 V(BR)DSS Drain-Source Breakdown Voltage F E 60 --- --- Vdc (VGS=0Vdc, ID=10Adc) Vtth(GS) Gate-T

1.35. 2n7002w.pdf Size:182K _mcc

2N7002
2N7002
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 SOT-323 A Mechanical Data D D Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 C B Terminal Connections: See Diagram G S Marking: K72 F E Maximum Ratings G H J Operating Temperature: -55Cto+150C Storage Temperature: -55Cto+150C K Maximum Thermal Resistance; 625K/W Junction To Ambient DIMENSIONS INCHES MM Parameter Symbol Value Unit DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 Drain-Source-Voltage VDSS 60 V D .026 Nominal 0.65Nominal E .04

1.36. 2n7002e_2.pdf Size:95K _onsemi

2N7002
2N7002
2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features Low RDS(on) http://onsemi.com Small Footprint Surface Mount Package Trench Technology V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS (Note 1) Compliant 60 V 3.0 W @ 4.5 V 310 mA Applications 2.5 W @ 10 V Low Side Load Switch Level Shift Circuits Simplified Schematic DC-DC Converter N-Channel Portable Applications i.e. DSC, PDA, Cell Phone, etc. 3 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Rating Symbol Value Unit 1 Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS 20 V Drain Current (Note 1) ID mA 2 Steady State TA = 25C 260 (Top View) TA = 85C 190 t < 5 s TA = 25C 310 TA = 85C 220 MARKING DIAGRAM & PIN ASSIGNMENT Power Dissipation (Note 1) PD mW 3 Drain Steady State 300 3 t < 5 s 420 1 Pulsed Drain Current (tp = 10 ms) IDM 1.2 A 703 MG 2 Operating Junction and Storage TJ, TSTG -55 to

1.37. 2n7002l.pdf Size:92K _onsemi

2N7002
2N7002
2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features AEC Qualified http://onsemi.com PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N-Channel Drain-Source Voltage VDSS 60 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Drain Current ID 115 mAdc ID 75 - Continuous TC = 25C (Note 1) IDM 800 - Continuous TC = 100C (Note 1) 1 - Pulsed (Note 2) Gate-Source Voltage VGS 20 Vdc - Continuous VGSM 40 Vpk 2 - Non-repetitive (tp ? 50 ms) THERMAL CHARACTERISTICS MARKING 3 Characteristic Symbol Max Unit DIAGRAM Total Device Dissipation FR-5 Board PD 225 mW 1 1.8 mW/C (Note 3) TA = 25C Derate above 25C 2 702 MG Thermal Resistance, Junction-to-Ambient RqJA 556 C/W SOT-23 G Total Device Dissipation PD 300 mW CASE 318 1 mW/C Alumina Substrate,(Note 4) TA = 25C STYLE 21 2.4

1.38. 2n7002.pdf Size:286K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002L-AE2-R 2N7002G-AE2-R SOT-23-3 S G D Tape Reel MARKING 3P L: Lead Free G: Halogen Free www.unisonic.com.tw 1 of 6 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R203-037, L 2N7002 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (R ?1M?) V 60 V GS DGR Cont

1.39. 2n7002ll.pdf Size:160K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1 voltages. This device is suitable for use as a load switch or in 2 PWM applications. FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON) = 7.5? @VGS = 10 V * Low Reverse Transfer Capacitance ( CRSS = typical 5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3. Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002LLK-AE2-R 2N7002LLG-AE2-R SOT-23-3 S G D Tape Reel MARKING www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-284.d 2N7002LL Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PAR

1.40. 2n7002dw.pdf Size:285K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 2N7002DWL-AL6-R 2N7002DWG-AL6-R SOT-363 S1 G1 D2 S2 G2 D1 Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-534.C 2N7002DW Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (

1.41. 2n7002z.pdf Size:178K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002Z Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002Z uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) <7.5? * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002ZL-AE2-R 2N7002ZG-AE2-R SOT-23-3 S G D Tape Reel MARKING www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-273.G 2N7002Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (T A=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source

1.42. 2n7002t.pdf Size:173K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002TL-AN3-R 2N7002TG-AN3-R SOT-523 S G D Tape Reel ? MARKING www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R502-542.C 2N7002T Power MOSFET ? ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (R ?1M?) V 60 V GS DGR Continuous ?20 Gate Source Voltage

1.43. 2n7002zdw.pdf Size:171K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 6.Drain 3.Drain 2.Gate 5.Gate 1.Source 4.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 2N7002ZDWL-AL6-R 2N7002ZDWG-AL6-R SOT-363 S1 G1 D2 S2 G2 D1 Tape Reel MARKING CPL G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-540.C 2N7002ZDW Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C

1.44. 2n7002zt.pdf Size:159K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002ZTL-AN3-R 2N7002ZTG-AN3-R SOT-523 S G D Tape Reel MARKING www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-538.C 2N7002ZT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage

1.45. 2n7002k.pdf Size:159K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002K Preliminary Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 4 5 6 2N7002KL-AE2-R 2N7002KG-AE2-R SOT-23-3 S G D - - - Tape Reel MARKING www.unisonic.com.tw 1 of 4 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-541.b 2N7002K Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT

1.46. 2n7002w.pdf Size:153K _utc

2N7002
2N7002
UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N7002WL-AL3-R 2N7002WG-AL3-R SOT-323 S G D Tape Reel MARKING 3P G: Halogen Free L: Lead Free www.unisonic.com.tw 1 of 3 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-537.b 2N7002W Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V 60 V DSS Drain-Gate Voltage (

1.47. 2n7002b.pdf Size:237K _auk

2N7002
2N7002
2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 2000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-23 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002B 7B2 ? SOT-23 Tape & Reel Marking Information 7B2 = Specific Device Code 7B2 ? ? = Year & Week Code Marking Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 300 mA Pulsed drain current (Note 1) IDP 800 mA Power dissipation (Note 2) PD 350 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient (Note 2) Rth(j-a) 350 ?C/W Note 1) Limited only maximum junction temp

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2N7002
2N7002
2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-23 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002K 7K2 ? SOT-23 Tape & Reel Marking Information 7K2 = Specific Device Code 7K2 ? ? = Year & Week Code Marking Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 300 mA Pulsed drain current (Note 1) IDP 800 mA Power dissipation (Note 2) PD 350 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient (Note 2) Rth(j-a) 350 ?C/W Note 1) Limited only maximum junction temp

1.49. 2n7002ku.pdf Size:241K _auk

2N7002
2N7002
2N7002KU N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-323 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002KU 7K2 ? SOT-323 Tape & Reel Marking Information 7K2 = Specific Device Code 7K2 ? ? = Year & Week Code Marking Absolute Maximum Ratings (Tamb=25?, Unless otherwise specified) Characteristic Symbol Ratings Unit Drain-Source voltage VDS 60 V Gate-Source voltage VGS ?20 V Maximum drain current (Note 1) ID 300 mA Pulsed drain current (Note 1) IDP 800 mA Power dissipation (Note 2) PD 310 mW Operating junction temperature Tj 150 ?C Storage temperature range Tstg -55 ~ 150 ?C Thermal resistance junction to ambient (Note 2) Rth(j-a) 400 ?C/W Note 1) Limited only maximum junction

1.50. 2n7002kdw.pdf Size:425K _secos

2N7002
2N7002
2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A ? Low on-resistance E L ? Fast switching Speed 6 5 4 ? Low-voltage drive ? Easily designed drive circuits B ? ESD protected:2000V 1 2 3 F C H 6 5 4 MECHANICAL DATA J D2 G1 S1 D G K ? Case: SOT-363 ? Case Material-UL flammability rating 94V-0 ? Terminals: Solderable per MIL-STD-202, Millimeter Millimeter REF. REF. Min. Max. Min. Max. Method 208 A 2.00 2.20 G 0.100 REF. ? Weight: 0.006 grams(approx.) B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 S2 G2 D1 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. 1 2 3 F 0.15 0.35 DEVICE MARKING: RK MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS 60 V Gate – Source Voltage VGS ±20 V Continuous Drain Current ID 115 mA Pulsed Drain Current IDP1 800 mA

1.51. 2n7002t.pdf Size:283K _secos

2N7002
2N7002
2N7002T 0.115A , 60V , RDS(ON) 7.2? N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES ? High density cell design for low RDS(ON). A ? Voltage controlled small signal switch. M ? Rugged and reliable. 3 3 ? High saturation current capability. Top View C B 1 1 2 L 2 K MARKING E D K72 H J F G PACKAGE INFORMATION Millimeter Millimeter REF. REF. Min. Max. Min. Max. Package MPQ Leader Size A 1.5 1.7 G - 0.1 B 1.45 1.75 H 0.55 REF. C 0.75 0.85 J 0.1 0.2 SOT-523 3K 7 inch D 0.7 0.9 K - E 0.9 1.1 L 0.5 TYP. F 0.15 0.25 M 0.25 0.325 ?? Drain ?? Gate ?? Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 150 mW Maximum Junction to Ambient R?JA 833 °C / W Operating Junction Temperature Range TJ 150 °C Operat

1.52. s2n7002k.pdf Size:1005K _secos

2N7002
2N7002
S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of “-C” specifies halogen & lead-free A L 3 3 Top View C B FEATURES 1 1 2 3 DRAIN 2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1 H J F G GATE * Easily designed drive circuits. Easy to parallel. * Gate Millimeter Millimeter REF. REF. Pretection Min. Max. Min. Max. Pb-Free package is available. Diode A 2.70 3.04 G - 0.18 ESD protected:2000V SOURCE 2 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 DEVICE MARKING: RK F 0.30 0.50 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDSS 60 V Gate – Source Voltage VGSS ±20 V Continuous ID 115 mA Drain Current Pulsed IDP1 0.8 A Continuous IDR 115 mA Drain Reverse Current Pulsed IDRP1 0.8 A

1.53. 2n7002k.pdf Size:527K _secos

2N7002
2N7002
2N7002K 0.3A , 60V , RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A L ? Advanced Trench Process Technology 3 3 ? High Density Cell Design For Ultra Low On-Resistance Top View C B ? Very Low Leakage Current In Off Condition 1 ? Specially Designed for Battery Operated Systems, 1 2 2 Solid-State Relays Drivers:Relays, Displays, Lamps, K E Solenoids, Memories, etc. ? ESD Protected 2KV HBM D ? In compliance with EU RoHS 2002/95/EC directives H J F G MECHANICAL DATA ? Case: SOT-23 Package Millimeter Millimeter REF. REF. ? Terminals: Solderable per MIL-STD-750, Min. Max. Min. Max. A 2.80 3.04 G 0.09 0.18 Method 2026 B 2.10 2.55 H 0.45 0.60 ? Approx. Weight: 0.008 gram C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F

1.54. s2n7002w.pdf Size:87K _secos

2N7002
2N7002
S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 ? N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ¦ Low on-resistance ¦ Low gate threshold voltage ¦ Low input capacitance ¦ Fast switching speed ¦ Low input/output leakage ¦ Ultra-small surface mount package A L 3 3 Top View C B 1 1 2 2 K E D PACKAGE INFORMATION H J F G Drain 3 Drain Drain 1 3 3 Gate 6C 72 2 1 1 2 2 Source Millimeter Millimeter Gate Gate Source Source REF. REF. Min. Max. Min. Max. X=Date Code A 1.80 2.20 G 0.00 0.10 B 2.00 2.40 H 0.425 REF. C 1.15 1.35 J 0.10 0.25 D 0.80 1.00 K - - E 1.20 1.40 L 0.650 TYP. F 0.30 0.40 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDDS 60 Vdc Drain-Gate Voltage(RGS=1.0M?) VDGR 60 Vdc Continuous Drain Current1 (TA=25°C) ±115 ID Continuous Drain Current1(TA=100°C) ±75 mAdc

1.55. s2n7002kw.pdf Size:536K _secos

2N7002
2N7002
S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES Low on-resistance Fast switching Speed A L Low-voltage drive 3 3 Easily designed drive circuits Top View C B 1 1 2 ESD protected:1500V 2 K E D H J F G Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. DEVICE MARKING: RK B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDSS 60 V Continuous Gate – Source Voltage VGSS ±20 V Continuous Drain Current ID 115 mA Pulsed Drain Current IDP1 800 mA Continuous Reverse Drain Current IDR 115 mA Pulsed Reverse Drain Current IDRP1 800 mA Total Power Dissipation PD2 225 mW Channel & Storage Temperature Range TCH, TSTG 150, -55~150 °C

1.56. 2n7002kw.pdf Size:527K _secos

2N7002
2N7002
2N7002KW 115mA , 60V, RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A ? Advanced Trench Process Technology L ? High Density Cell Design For Ultra Low On-Resistance 3 3 ? Very Low Leakage Current In Off Condition Top View C B ? Specially Designed for Battery Operated Systems, 1 1 2 Solid-State Relays Drivers:Relays, Displays, Lamps, 2 K E Solenoids, Memories, etc. ? ESD Protected 2KV HBM D ? In compliance with EU RoHS 2002/95/EC directives H J F G MECHANICAL DATA ? Case: SOT-323 Package Millimeter Millimeter REF. REF. ? Terminals: Solderable per MIL-STD-750, Min. Max. Min. Max. A 1.80 2.20 G 0.100 REF. Method 2026 B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - MARKING E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 K72

1.57. s2n7002dw.pdf Size:247K _secos

2N7002
2N7002
S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA ? Case: SOT-363,Molded Plastic. ? Case Material-UL Flammability Rating 94V-0 ? Terminals: Solderable per MIL-STD-202, Method 208 ? Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INFORMATION Package MPQ Leader Size Millimeter Millimeter REF. REF. Min. Max. Min. Max. SOT-363 3K 7’ inch A 2.00 2.20 G 0.100 REF. B 2.15 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.15 D 0.90 1.10 K 8° E 1.20 1.40 L 0.650 TYP. F 0.15 0.35 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS 60 V Drain – Gate Voltage RGS=1M? VDGR 60 V Gate – Source Voltage VGS ±20 V Continuous Drain Current ID 115 mA Power Dissipation PD 380 mW Maximum Junction-to-Ambient R?JA 328 °C / W Operating Junction & Storage Temperature Range TJ,

1.58. s2n7002.pdf Size:82K _secos

2N7002
2N7002
S2N7002 115 mA, 60 V, RDS(ON) = 7.5 ? Elektronische Bauelemente N-Ch Small Signal MOSFET RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A L FEATURES 3 3 Pb-Free Package is Available Top View C B PACKAGING INFORMATION 1 1 2 2 K E Drain Drain 3 3 D H J F G 702 W 1 Millimeter Millimeter REF. REF. Min. Max. Min. Max. Gate A 2.80 3.04 G 0.013 0.10 1 2 B 2.10 2.55 H 0.45 0.60 Gate Source C 1.20 1.40 J 0.08 0.177 702 =Device Code D 0.89 1.15 K 0.6 REF. 2 W =Date Code E 1.80 2.00 L 0.89 1.02 Source F 0.30 0.50 MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage(RGS=1.0 M?) VDGR 60 Vdc 1 TC=25°C ±115 mAdc Continuous Drain Current ID 1 TC=100°C ±75 mAdc Pulsed Drain Current 2 IDM ±800 mAdc Continuous Gate-Source Voltage VGS ±20 Vdc Non-Repetitive Gate-Source Voltage(tP?50µS

1.59. tsm2n7002e_a07.pdf Size:143K _taiwansemi

2N7002
2N7002

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2N7002
2N7002

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2N7002
2N7002
2N7002 SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controlled small signal switch. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 P P L 0.55 MAXIMUM RATING (Ta=25 ) M 0.20 MIN N 1.00+0.20/-0.10 CHARACTERISTIC SYMBOL RATING UNIT P 7 VDSS M Drain-Source Voltage 60 V VGSS Gate-Source Voltage V 20 1. SOURCE ID Continuous 300 2. GATE Drain Current mA 3. DRAIN IDP Pulsed (Note 1) 1200 PD Drain Power Dissipation (Note 2) 300 mW Tj Junction Temperature 150 SOT-23 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) EQUIVALENT CIRCUIT D Marking Lot No. G Typ

1.62. 2n7002k.pdf Size:68K _kec

2N7002
2N7002
2N7002K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ESD Protected 2000V. DIM MILLIMETERS High density cell design for low RDS(ON). _ A + 2.93 0.20 B 1.30+0.20/-0.15 Voltage controlled small signal switch. C 1.30 MAX 2 3 Rugged and reliable. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High saturation current capablity. 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 P P L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25 ) P 7 CHARACTERISTIC SYMBOL RATING UNIT M VDSS Drain-Source Voltage 60 V 1. SOURCE VGSS Gate-Source Voltage V 20 2. GATE 3. DRAIN ID Continuous 300 Drain Current mA IDP Pulsed (Note 1) 1200 PD Drain Power Dissipation (Note 2) 300 mW SOT-23 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Note 1) Pulse Width 10 , Duty Cycle 1% Note 2) Package mounted on a glass epoxy PCB(100mm2 1mm) EQUIVALENT CIRCUIT D Marking Lot No.

1.63. 2n7002ka.pdf Size:552K _kec

2N7002
2N7002
2N7002KA SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ·ESD Protected 2000V. DIM MILLIMETERS _ + ·High density cell design for low RDS(ON). A 2.93 0.20 B 1.30+0.20/-0.15 ·Voltage controlled small signal switch. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Rugged and reliable. E 2.40+0.30/-0.20 1 G 1.90 ·High saturation current capablity. H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q L 0.55 P P M 0.20 MIN N 1.00+0.20/-0.10 MAXIMUM RATING (Ta=25?) P 7 Q 0.1 MAX M CHARACTERISTIC SYMBOL RATING UNIT VDSS Drain-Source Voltage 60 V 1. SOURCE 2. GATE VGSS ±20 Gate-Source Voltage V 3. DRAIN ID Continuous 300 Drain Current mA IDP Pulsed (Note 1) 1200 PD Drain Power Dissipation (Note 2) 350 mW SOT-23 Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range Note 1) Pulse Width?10?, Duty Cycle?1% Note 2) Package mounted on 99% Alumina 10?8?0.6mm EQUIVALENT CIRCUIT

1.64. 2n7002a.pdf Size:51K _kec

2N7002
2N7002
2N7002A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controolled small signal switch. _ A + 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 P P L 0.55 MAXIMUM RATING (Ta=25 ) M 0.20 MIN N 1.00+0.20/-0.10 CHARACTERISTIC SYMBOL RATING UNIT P 7 M VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS 1 ) 60 V 1. SOURCE VGSS 2. GATE Gate-Source Voltage V 20 3. DRAIN ID Continuous 115 Drain Current mA IDP Pulsed 800 PD Drain Power Dissipation 200 mW SOT-23 Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range Marking EQUIVALENT CIRCUIT Lot No. D Type Name WB G S THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HAN

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2N7002
2N7002
2N7002 Mosfet (N-Channel) SOT-23 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: 7002 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10 ?A 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 ?A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS=В±25 V В±80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500mA 1 7.5 Drain-Source On-Resistance rDS(0n)

1.66. 2n7002w.pdf Size:241K _lge

2N7002
2N7002
2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking: K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V ID Drain Current 115 mA PD Power Dissipation 225 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT VGS=0 V, ID=10 ?A 60 Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=3mA 60 V Gate-Threshold Voltage Vth(GS) VDS=VGS, ID=250 ?A 1 2.5 Gate-body Leakage lGSS VDS=0 V, VGS=В±25 V В±100 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 1 ?A On-state Drain Current ID(ON) VGS=10 V, VDS=7 V 500 mA VGS=10 V, ID=500 mA 7.5 Drain-Source

1.67. 2n7002.pdf Size:298K _wietron

2N7002
2N7002
WEITRON 2N7002 Small Signal MOSFET 3 DRAIN N-Channel 3 P b Lead(Pb)-Free 1 2 1 GATE SOT-23 2 SOURCE Maximum Ratings (T =25°C Unless Otherwise Specified) A Rating Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage(RGS = 1.0M?) VDGR 60 V ±115 Drain Current ID Continuous TC = 25°C (Note 1.) ±75 ID mA – Con tinuous IDM ±800 TC= 100°C (Note 1.) Pulsed (Note2.) Gate Source Voltage VGS Con tinuous ±20 V VGSM Non–repe titive (tp? 50µs) V ±40 Thermal Characteristics (T =25°C Unless Otherwise Specified) A Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board 225 mW PD (Note3.) TA=25°C mW/°C 1.8 Derate above 25°C R?JA Thermal Resistance, Junction to Ambient 556 °C/W Total Device Dissipation mW 300 PD Alumina Substrate,(Note4.)TA =25°C mW/°C 2.4 Derate above 25°C R?JA Thermal Resistance, Junction to Ambient 417 °C/W TJ Junction Temperature -55 to +150 °C Tstg Storage Temperature -55

1.68. 2n7002kdw.pdf Size:161K _wietron

2N7002
2N7002
2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead(Pb)-Free 4 1 2 3 Features: * Low On-Resistance SOT-363(SC-88) * Fast Switching Speed * Low-voltage drive 6 5 4 * Easily designed drive circuits D2 G1 S1 * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 S2 G2 D1 *Terminals: Solderable per MIL-STD-202, Method 208 1 2 3 *Weight: 0.006 grams(approx.) Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current ID 115 Continuous mA *1 Pulsed IDP 800 Reverse Drain Current ID 115 Continuous mA *1 Pulsed IDRP 800 Power Dissipation (TA=25°C) PD 225 mW Operating Junction and Storage TJ,Tstg -55 to 150 °C Temperature Range Device Marking 2N7002KDW=RK Note *2 When mounted on a 1*0.75*0.062 inch glass epoxy board WEITRON 1/4 09-Jan-09 http://www.weitron.com.tw 2N7002KDW Electrical Characteris

1.69. 2n7002dw.pdf Size:212K _wietron

2N7002
2N7002
2N7002DW Dual N-Channel MOSFET 6 5 4 1 2 3 Features: * We declare that the material of product are Halogen Free and SOT-363(SC-88) compliance with RoHS requirements. * ESD Protected:1000V 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage RGS<1.0M? _ VDGR 60 V Gate-Source Voltage VGS ±20 V Drain Current ID ±115 @Continuous(TC=25 C)(Note 1) mA ID ±75 (TC=100 C)(Note 1) IDM ±800 @Pulsed(Note 2) Power Dissipation 380 Per Device mW PD 250 FR-5 Board (Note 1) (TA=25 C) 3.0 mW/ C Derate Above 25 C Thermal Resistance, Junction-to-Ambient R 326 C/W JA ? Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7002DW=702 Note 1: FR-5 = 1.0 x 0.75 x 0.062 in WEITRON 1/4 13-May-2011 http://www.weitron.com.tw 2N7002DW Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol M

1.70. 2n7002t.pdf Size:287K _wietron

2N7002
2N7002
2N7002T N-Channel ENHANCEMENT MODE POWER MOSFET 3 1. GATE 1 P b Lead(Pb)-Free 2 2. SOURCE 3. DRAIN SOT-523(SC-75) FEATURES: * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers Maximum Ratings (TA=25°C unless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 60 V VGSS ±20 Gate-Source Voltage V Drain Current 115 mA ID PD Total Power Dissipation 150 mW Junction temperature Range T 150 °C j Storage Temperature Range Tstg -55 to +150 °C Device Marking 2N7002T = K72 WEITRON 1/4 17-Sep-09 http://www.weitron.com.tw 2N7002T ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise specified) A Parameter Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V(BR)DSS 60 - - V VGS=0V,ID=10µA Gate-Threshold Voltage Vth(GS) 1 -

1.71. 2n7002k.pdf Size:335K _wietron

2N7002
2N7002
2N7002K N-Channel Enhancement 3 DRAIN Mode Power MOSFET 3 1 P b Lead(Pb)-Free 1 GATE * 2 * Gate Pretection Diode SOURCE 2 SOT-23 Features: * Low on-resistance. * Fast switching speed. * Low-voltage drive. * Easily designed drive circuits. * Easy to parallel. * Pb-Free package is available. * Esd Protected:2000V Maximum Ratings(T = 25? Unless Otherwise Specified) A Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Continuous ID 115 mA Drain current 1 * Pulsed IDP 0.8 A Continuous IDR 115 mA Drain reverse current 1 * Pulsed IDRP 0.8 A 2 * PD 225 mW Total power dissipation Channel temperature Tch 150 °C Storage temperature + Tstg -55~ 150 °C 1. Pw ? 10µs, Duty cycle ? 1%. 2. When mounted on a 1?0.75?0.062 inch glass epoxy board. Device Marking 2N7002K = RK WEITRON 1/5 02-Mar-10 http://www.weitron.com.tw 2N7002K ° Parameter Symbol Min. Typ. Max. Unit Gate-source leakage current IGS

1.72. 2n7002kt.pdf Size:626K _wietron

2N7002
2N7002
2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed Drain * Low On-Resistance * Low Voltage Driver 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits 1 (Top View) 2 * Load/Power Switching Cell Phones, Pagers Gate Source Maximum Ratings (TA=25°C unless otherwise specified) Characteristic Symbol Values Unit Drain-Source Voltage VDSS 60 V VGSS ±20 Gate-Source Voltage Continuous V Drain Current Continuous 115 mA ID IDP1 Pulsed 800 mA Reverse drain current Continuous ID 115 mA IDRP1 Pulsed 800 mA PD2 Total Power Dissipation 225 mW Junction temperature Range T 150 °C j Storage Temperature Range Tstg -55 to +150 °C Note 1. Pw ? 10µs, Duty cycle ? 1% 2. When mounted on a 1 x 0.75 x 0.062 inch glass epoxy board Device Marking 2N7002KT = RS WEITRON 1/5 14-Sep-09

1.73. 2n7002w.pdf Size:359K _wietron

2N7002
2N7002
2N7002W N-Channel MOSFET 3 DRAIN 3 Features: 1 1 2 *Low On-Resistance : 7.5 ? GATE *Low Input Capacitance: 22PF SOT-323(SC-70) *Low Output Capacitance : 11PF 2 *Low Threshold Voltage :1 .5V(TYE) SOURCE *Fast Switching Speed : 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TA=25 C) ID 115 mA Power Dissipation (TA=25 C) PD 200 mW Maximax Junction-to-Ambient R ?JA 625 C/W Operating Junction and Storage TJ, Tstg -55 to 150 C Temperature Range Device Marking 2N7002W = 6C WEITRON http://www.weitron.com.tw 2N7002W Electrical Characteristics (TA=25 C Unless otherwise noted) Characteristic Symbol Min Typ Max Unit Static(1) Drain-Source Breakdown Voltage V(BR)DSS 60 70 - V VGS=0V, I =10 uA D Gate-Threshold Voltage VGS (th) 1.0 1.5 2.0 V VDS=V , I =-250uA GS D Gate-body Leakage IGSS +10 _ nA - - + _ VGS= 20V, VDS=0V Zero G

1.74. 2n7002elt1.pdf Size:382K _willas

2N7002
2N7002
FM120-M WILLAS 2N7002ELT1 THRU Small Signal MOSFET 310 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounte N–Channel SOT–23d application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. SOT– 23 • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 310 mAMPS MAXIMUM RATINGS Mechanical data

1.75. 2n7002nt1.pdf Size:429K _willas

2N7002
2N7002
FM120-M WILLAS THRU 2N7002NT1 30 V, 154 mA, Single, N-Channel, Gate FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ESD Protection, SC-89 SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) Features • Ultra high-speed switching. 0.056(1.4) • Silic•on epitaxial planar chip, metal silicon junction. Low Gate Charge for Fast Switching • Lead-free parts meet environmental standards of • Small 1.6 X 1.6 mm Footprint MIL-STD-19500 /228 • ESD Protected Gate • RoHS product for packing code suffix "G" Haloge

1.76. 2n7002lt1.pdf Size:370K _willas

2N7002
2N7002
FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Channel SOT–23 3 optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) • • We declare that the material of product are Halogen Free and 0.012(0.3) Typ. • High current capability, low forward voltage drop. 1 compliance with RoHS requirements. • High surge capability. 2 ESD Protected:1000V • • Guardring for overvoltage protection. • Ultra high-speed switching. SOT– 23 0.071(1.8) • 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • R

1.77. 2n7002wt1.pdf Size:368K _willas

2N7002
2N7002
FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to N–Channel SOT–323 optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • We declare that the material of product • High scompliance with RoHS requirements. urge capability. • Guardring for overvoltage protection. • ESD Protected:1000V 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of SOT– 323 MIL-STD-19500 /228 • RoHS product for packing code suffix

1.78. 2n7002dw1t1.pdf Size:375K _willas

2N7002
2N7002
FM120-M WILLAS THRU 2N7002DW1T1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Small Signal MOSFET 115 mAmps,60 Volts SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers N–Channel SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimi We declare that the material of product are Halogen Free and • • ze board space. 0.146(3.7) • Low power loss, high efficiency. compliance with RoHS requirements. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. • ESD Protected:1000V • High surge capability. • • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 MAXIMUM RATINGS •

1.79. 2n7002t.pdf Size:412K _willas

2N7002
2N7002
FM120-M WILLAS THRU 2N7002T SOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H MOSFET (N-Channel) nted application in order to • Low profile surface mou optimize bo FEATURES ard space. 0.146(3. SOT-523 7) • Low power loss, high efficiency. 0.130(3.3) High density cell design for low RDS(ON) 0.012(0.3) Typ. • High current capability, low forward voltage drop. Voltage controlled small signal switch • High surge capability. 3 • Guardring for overvoltage protection. Rugged and reliable 0.071(1.8) • Ultra high-speed switching. 1. GATE 0.056(1.4) High saturation current capability • Silicon epitaxial planar chip, metal silicon junction. 1 2. SOURCE • Lead-free parts meet e

1.80. h2n7002.pdf Size:129K _hsmc

2N7002
2N7002
Spec. No. : MOS200503 HI-SINCERITY Issued Date : 2005.04.01 Revised Date : 2009.10.09 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002 N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. SOT-23 Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1M?)............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... ±20 V Continuous Drain Current (TA=25°C)(1)............................................................................................................. 200 mA Continuous Drain Current (TA=100°C)(1).........................................

1.81. h2n7002ksn.pdf Size:156K _hsmc

2N7002
2N7002
Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1M?)............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... ±20 V Continuous Drain Current (TA=25°C)(1)......................................................................

1.82. h2n7002sn.pdf Size:114K _hsmc

2N7002
2N7002
Spec. No. : MOS200605 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002SN Pin Assignment & Symbol H2N7002SN 3 3-Lead Plastic SOT-323 Package Code: SN N-Channel MOSFET (60V, 0.2A) Pin 1: Gate 2: Source 3: Drain 2 1 D Description G N-channel enhancement-mode MOS transistor. S Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1M?) ............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... ±20 V Continuous Drain Current (TA=25°C)(1) ...................................................................................

1.83. h2n7002k.pdf Size:136K _hsmc

2N7002
2N7002
Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................................................ 60 V Drain-Gate Voltage (RGS=1M?)............................................................................................................................. 60 V Gate-Source Voltage ........................................................................................................................................... ±20 V Continuous Drain Current (TA=25°C)(1)............................................................................................................. 200 mA Continuous Drain Current (TA=100°C)(1)..................................

1.84. ap2n7002k-hf.pdf Size:58K _a-power

2N7002
2N7002
AP2N7002K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Small Package Outline RDS(ON) 2? Ў Surface Mount Device ID 450mA S Ў RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G The SOT-23 package is universally used for all commercial-industrial applications. S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V Continuous Drain Current3, VGS @ 10V ID@TA=25? 450 mA Continuous Drain Current3, VGS @ 10V ID@TA=70? 360 mA IDM Pulsed Drain Current1 950 mA PD@TA=25? Total Power Dissipation 0.7 W Linear Derating Factor 0.005 W/? TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range -55 to 150 ? Thermal Data Symbo

See also transistors datasheet: 2N6968JANTX , 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , 2N7000 , 2N7000P , 2N7001 , IRF530 , 2N7002L , 2N7004 , 2N7005 , 2N7006 , 2N7007 , 2N7008 , 2N7012 , 2N7013 .

Keywords

 2N7002 Datasheet  2N7002 Datenblatt  2N7002 RoHS  2N7002 Distributor
 2N7002 Application Notes  2N7002 Component  2N7002 Circuit  2N7002 Schematic
 2N7002 Equivalent  2N7002 Cross Reference  2N7002 Data Sheet  2N7002 Fiche Technique

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