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2N7002L MOSFET (IC) Datasheet. Cross Reference Search. 2N7002L Equivalent

Type Designator: 2N7002L

Type of 2N7002L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 0.2

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.115

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7002L transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 50

Maximum drain-source on-state resistance (Rds), Ohm: 7.5

Package: SOT23

2N7002L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7002L PDF doc:

1.1. 2n7002lt1.pdf Size:98K _motorola

2N7002L
2N7002L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N–Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc CASE 318–08, STYLE 21 SOT–23 (TO–236AB) Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current — Continuous TC = 25°C(1

1.2. 2n7002lt1rev2.pdf Size:94K _motorola

2N7002L
2N7002L

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N7002LT1/D TMOS FET Transistor 2N7002LT1 3 DRAIN N–Channel Enhancement Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc CASE 318–08, STYLE 21 SOT–23 (TO–236AB) Drain–Gate Voltage (RGS = 1.0 M?) VDGR 60 Vdc Drain Current — Continuous TC = 25°C(1

1.3. 2n7002l.pdf Size:92K _onsemi

2N7002L
2N7002L

2N7002L Small Signal MOSFET 60 V, 115 mA, N-Channel SOT-23 Features • AEC Qualified http://onsemi.com • PPAP Capable • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant 7.5 W @ 10 V, 60 V 115 mA 500 mA MAXIMUM RATINGS Rating Symbol Value Unit N-Channel Drain-Source Voltage VDSS 60 Vdc 3 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vd

1.4. 2n7002ll.pdf Size:160K _utc

2N7002L
2N7002L

UNISONIC TECHNOLOGIES CO., LTD 2N7002LL Preliminary Power MOSFET 60V, 115mA N-CHANNEL POWER MOSFET DESCRIPTION 3 The UTC 2N7002LL uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate 1 voltages. This device is suitable for use as a load switch or in 2 PWM applications. FEATURES SOT-23-3 (JEDEC TO-236) * RDS(ON) = 7.5? @VGS

1.5. 2n7002lt1.pdf Size:370K _willas

2N7002L
2N7002L

FM120-M WILLAS THRU 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Nâ€

See also transistors datasheet: 2N6968JANTXV , 2N6969 , 2N6969JANTX , 2N6969JANTXV , 2N7000 , 2N7000P , 2N7001 , 2N7002 , IRF1404 , 2N7004 , 2N7005 , 2N7006 , 2N7007 , 2N7008 , 2N7012 , 2N7013 , 2N7014 .

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 2N7002L - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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