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APT12067B2LL MOSFET (IC) Datasheet. Cross Reference Search. APT12067B2LL Equivalent

Type Designator: APT12067B2LL

Type of APT12067B2LL transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 565

Maximum drain-source voltage |Uds|, V: 1200

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C: 150

Rise Time of APT12067B2LL transistor (tr), nS: 11

Drain-source Capacitance (Cd), pF: 690

Maximum drain-source on-state resistance (Rds), Ohm: 0.67

Package: TMAX

APT12067B2LL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT12067B2LL PDF doc:

1.1. apt12067b2ll.pdf Size:69K _apt

APT12067B2LL
APT12067B2LL

APT12067B2LL APT12067LLL 1200V 18A 0.670W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX™ TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast

2.1. apt12067jll.pdf Size:69K _apt

APT12067B2LL
APT12067B2LL

APT12067JLL 1200V 17A 0.670W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

3.1. apt12060b2vr.pdf Size:38K _apt

APT12067B2LL
APT12067B2LL

APT12060B2VR APT12060LVR 1200V 20A 0.600W B2VR POWER MOS V® T-MAX™ Power MOS V® is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. LVR • Identical Specificati

3.2. apt12060b2vfr.pdf Size:117K _apt

APT12067B2LL
APT12067B2LL

APT12060B2VFR APT12060LVFR Ω 1200V 20A 0.600Ω Ω Ω Ω POWER MOS V® T-MAX™ TO-264 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster S

See also transistors datasheet: APT12040JVFR , APT12040L2LL , APT12045L2VFR , APT12045L2VR , APT12057B2LL , APT12057JLL , APT12060B2VFR , APT12060B2VR , STF5N52U , APT12067JLL , APT12080B2VFR , APT12080JVFR , APT14050JVFR , APT17N80BC3 , APT17N80SC3 , APT20M10JFLL , APT20M10JLL .

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