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HUF75639P3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF75639P3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 56 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO220AB

HUF75639P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF75639P3 PDF doc:

1.1. huf75639g3_huf75639p3_huf75639s3s_huf75639s3.pdf Size:229K _fairchild_semi

HUF75639P3
HUF75639P3

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber Thermal Impe

2.1. huf75639s_f085a.pdf Size:230K _fairchild_semi

HUF75639P3
HUF75639P3

HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Peak Current vs Pulse Width Curve are manufactured using the • UIS Rating Curve innovative UltraFET® process. This advanced process technology • Related Literature achieves the lowest possible on-resistance per silicon ar

3.1. huf75631sk8.pdf Size:254K _fairchild_semi

HUF75639P3
HUF75639P3

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

3.2. huf75631s3s.pdf Size:202K _fairchild_semi

HUF75639P3
HUF75639P3

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.040?, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice and SABER Therm

3.3. huf75637.pdf Size:201K _fairchild_semi

HUF75639P3
HUF75639P3

HUF75637P3, HUF75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.030Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice and S

Datasheet: HUF75545P3 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , HUF75637P3 , HUF75637S3S , HUF75639G3 , 2SK105 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 , HUF76105SK8 , HUF76107D3 , HUF76107D3S .

 


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