All MOSFET Datasheet

 

HUF75639P3 MOSFET (IC) Datasheet. Cross Reference Search. HUF75639P3 Equivalent

Type Designator: HUF75639P3

Type of HUF75639P3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 56

Maximum junction temperature (Tj), °C: 150

Rise Time of HUF75639P3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.025

Package: TO220AB

HUF75639P3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF75639P3 PDF doc:

1.1. huf75639g3_huf75639p3_huf75639s3s_huf75639s3.pdf Size:229K _fairchild_semi

HUF75639P3
HUF75639P3

HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber Thermal Impe

2.1. huf75639s_f085a.pdf Size:230K _fairchild_semi

HUF75639P3
HUF75639P3

HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Peak Current vs Pulse Width Curve are manufactured using the • UIS Rating Curve innovative UltraFET® process. This advanced process technology • Related Literature achieves the lowest possible on-resistance per silicon ar

3.1. huf75631sk8.pdf Size:254K _fairchild_semi

HUF75639P3
HUF75639P3

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

3.2. huf75631s3s.pdf Size:202K _fairchild_semi

HUF75639P3
HUF75639P3

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.040?, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice and SABER Therm

3.3. huf75637.pdf Size:201K _fairchild_semi

HUF75639P3
HUF75639P3

HUF75637P3, HUF75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.030Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice and S

See also transistors datasheet: HUF75545P3 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , HUF75637P3 , HUF75637S3S , HUF75639G3 , 2SK105 , HUF75639S3S , HUF75645P3 , HUF75645S3S , HUF75652G3 , HUF76105DK8 , HUF76105SK8 , HUF76107D3 , HUF76107D3S .

Search Terms:

 HUF75639P3 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


HUF75639P3
  HUF75639P3
  HUF75639P3
  HUF75639P3
 
HUF75639P3
  HUF75639P3
  HUF75639P3
  HUF75639P3
 

social 

LIST

Last Update

MOSFET: 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H | RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers