All MOSFET. FDMS0312AS Datasheet

 

FDMS0312AS MOSFET. Datasheet pdf. Equivalent

Type Designator: FDMS0312AS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2.5 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 18 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm

Package: PQFN5X6

FDMS0312AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDMS0312AS PDF doc:

1.1. fdms0312as.pdf Size:305K _fairchild_semi

FDMS0312AS
FDMS0312AS

October 2014 FDMS0312AS N-Channel PowerTrench® SyncFETTM 30 V, 22 A, 5.0 mΩ Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 mΩ at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A

2.1. fdms0312s.pdf Size:270K _fairchild_semi

FDMS0312AS
FDMS0312AS

January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m? Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m? at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m? at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advanced

3.1. fdms0310s.pdf Size:454K _fairchild_semi

FDMS0312AS
FDMS0312AS

January 2015 FDMS0310S N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 4 mΩ Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan

3.2. fdms0310as.pdf Size:337K _fairchild_semi

FDMS0312AS
FDMS0312AS

August 2014 FDMS0310AS N-Channel PowerTrench® SyncFETTM 30 V, 22 A, 4.3 mΩ Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A

Datasheet: FDMD84100 , FCH041N60E , FDMC6686P , FDMS86150A , FDMS8670S , FDMS0308AS , FDMS0309AS , FDMS0310AS , IRFZ46N , FQB27N25TM_F085 , FDBL9403_F085 , FDBL9406_F085 , FDMS86163P , FDBL9401_F085 , FDD9409_F085 , FDMA86265P , FDMC86265P .

 


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