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JCS2N60F MOSFET (IC) Datasheet. Cross Reference Search. JCS2N60F Equivalent

Type Designator: JCS2N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 23

Maximum Drain-Source Voltage |Vds|, V: 600

Maximum Gate-Source Voltage |Vgs|, V: 30

Maximum Drain Current |Id|, A: 2

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS: 50

Drain-Source Capacitance (Cd), pF: 35

Maximum Drain-Source On-State Resistance (Rds), Ohm: 5

Package: TO220MF

JCS2N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

JCS2N60F PDF doc:

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JCS2N60F
JCS2N60F

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID 2.0 A VDSS 600 V Rdson 5 Ω (@Vgs=10V) Qg 15.3 nC APPLICATIONS 用途  High frequency switching  高频开关电源 mode power supply  电子镇流器  Electronic ballast  LED 电源  LED power supply 产品特性 FEATUR

See also transistors datasheet: BRA4N65 , BRA7N80 , AON6788 , CS2N60 , CS2N60F , JCS2N60V , JCS2N60R , JCS2N60C , IRFZ24N , SI4963DY , BRB50N06 , BRB7N60 , BRB7N65 , BRB7N80 , BRB80N06 , BRB80N08 , BRB80N10 .

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