HUF76145P3 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: HUF76145P3

Type of HUF76145P3 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 75

Maximum junction temperature (Tj), °C: 150

Rise Time of HUF76145P3 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0045

Package:

Equivalent transistors for HUF76145P3

HUF76145P3 PDF documents for downloads:

3.1. huf76143.pdf Size:109K _intersil

HUF76143P3, HUF76143S3S Data Sheet September 1999 File Number 4400.7 75A, 30V, 0.0055 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 75A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.0055? innovative UltraFET™ process. This advanced process technology • Temperature Compensating PSPICE® Model achieves the lowest possible on-resistance per silicon area, • Temperature Compensating SABER© Mode resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • Thermal Impedance SPICE Model diode exhibits very low reverse recovery time and stored • Thermal Impedance SABER Model charge. It was designed for use in applications where power • Peak Current vs Pulse Width Curve efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- • UIS Rating Curve voltage bus switches,

4.1. huf76139.pdf Size:121K _intersil

HUF76139P3, HUF76139S3S Data Sheet September 1999 File Number 4399.5 75A, 30V, 0.0075 Ohm, N-Channel, Logic Features Level UltraFET Power MOSFETs • Logic Level Gate Drive These N-Channel power MOSFETs • 75A, 30V are manufactured using the • Ultra Low On-Resistance, rDS(ON) = 0.0075? innovative UltraFET™ process. This advanced process technology • Temperature Compensating PSPICE® Model achieves the lowest possible on-resistance per silicon area, • Temperature Compensating SABER© Model resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • Thermal Impedance SPICE Model diode exhibits very low reverse recovery time and stored • Thermal Impedance SABER Model charge. It was designed for use in applications where power • Peak Current vs Pulse Width Curve efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- • UIS Rating Curve voltage bus switches

5.1. huf76423p3.pdf Size:241K _fairchild_semi

HUF76423P3, HUF76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN • Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.030?, VGS = 10V GATE - rDS(ON) = 0.035?, VGS = 5V GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Models (FLANGE) - www.fairchildsemi.com HUF76423P3 HUF76423S3S • Peak Current vs Pulse Width Curve • UIS Rating Curve Symbol • Switching Time vs RGS Curves D Ordering Information PART NUMBER PACKAGE BRAND G HUF76423P3 TO-220AB 76423P HUF76423S3S TO-263AB 76423S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76423S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76423P3, HUF76423S3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . .

5.2. huf76429d3-s.pdf Size:288K _fairchild_semi

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023?, VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027?, VGS = 5V GATE • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Models (FLANGE) - www.fairchildsemi.com HUF76429D3 HUF76429D3S • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Symbol D Ordering Information PART NUMBER PACKAGE BRAND G HUF76429D3 TO-251AA 76429D HUF76429D3S TO-252AA 76429D S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76429D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76429D3, HUF76429D3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . .

5.3. huf76407d3_huf76407d3s.pdf Size:234K _fairchild_semi

HUF76407D3, HUF76407D3S Data Sheet December 2001 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN DRAIN SOURCE • Ultra Low On-Resistance (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.092?, VGS = 10V - rDS(ON) = 0.107?, VGS = 5V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ HUF76407D3S HUF76407D3 Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol • Peak Current vs Pulse Width Curve D • UIS Rating Curve • Switching Time vs RGS Curves G Ordering Information S PART NUMBER PACKAGE BRAND HUF76407D3 TO-251AA 76407D HUF76407D3S TO-252AA 76407D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF76407D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76407D3, HUF76407D3S UNITS Drain to Source Voltage (Note 1) . . . . . .

5.4. huf76429s3s.pdf Size:207K _fairchild_semi

HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022?, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025?, VGS = 5V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Models (FLANGE) - www.fairchildsemi.com HUF76429P3 HUF76429S3S • Peak Current vs Pulse Width Curve • UIS Rating Curve Symbol • Switching Time vs RGS Curves D Ordering Information PART NUMBER PACKAGE BRAND G HUF76429P3 TO-220AB 76429P HUF76429S3S TO-263AB 76429S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76429S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76429P3, HUF76429S3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . .

5.5. huf76439s3s.pdf Size:210K _fairchild_semi

HUF76439P3, HUF76439S3S Data Sheet December 2001 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance - rDS(ON) = 0.012?, VGS = 10V SOURCE DRAIN - rDS(ON) = 0.014?, VGS = 5V DRAIN (FLANGE) GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models DRAIN - www.fairchildsemi.com (FLANGE) • Peak Current vs Pulse Width Curve HUF76439P3 HUF76439S3S • UIS Rating Curve • Switching Time vs RGS Curves Symbol D Ordering Information PART NUMBER PACKAGE BRAND G HUF76439P3 TO-220AB 76439P HUF76439S3S TO-263AB 76439S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76439S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76439P3, HUF76439S3S UNITS Drain to Source Voltage (Note 1). . . . . . . . . .

5.6. huf76423d3s.pdf Size:199K _fairchild_semi

HUF76423D3, HUF76423D3S Data Sheet December 2001 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETFairchild Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance - rDS(ON) = 0.032?, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.037?, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models HUF76423D3S HUF76423D3 - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Symbol Ordering Information D PART NUMBER PACKAGE BRAND HUF76423D3 TO-251AA 76423D G HUF76423D3S TO-252AA 76423D S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76423D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76423D3, HUF76423D3S UNITS Drain to Source Voltage (Note 1) . . . . . . .

5.7. huf76629d3-s.pdf Size:203K _fairchild_semi

HUF76629D3, HUF76629D3S Data Sheet December 2001 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance DRAIN SOURCE (FLANGE) - rDS(ON) = 0.052?, VGS = 10V DRAIN - rDS(ON) = 0.054?, VGS = 5V GATE • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Electriecal Models DRAIN (FLANGE) - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com HUF76629D3 HUF76629D3S • Peak Current vs Pulse Width Curve • UIS Rating Curve Symbol • Switching Time vs RGS Curves D Ordering Information PART NUMBER PACKAGE BRAND G HUF76629D3 TO-251AA 76629D HUF76629D3S TO-252AA 76629D S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76629D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76629D3, HUF76629D3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . .

5.8. huf76609d3s.pdf Size:220K _fairchild_semi

HUF76609D3, HUF76609D3S Data Sheet December 2001 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance DRAIN DRAIN - rDS(ON) = 0.160?, VGS = 10V SOURCE (FLANGE) (FLANGE) DRAIN GATE - rDS(ON) = 0.165?, VGS = 5V GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models - Spice and SABER Thermal Impedance Models HUF76609D3S HUF76609D3 - www.Fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve Symbol • Switching Time vs RGS Curves D Ordering Information PART NUMBER PACKAGE BRAND G HUF76609D3 TO-251AA 76609D HUF76609D3S TO-252AA 76609D S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76609D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76609D3, HUF76609D3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . .

5.9. huf76639s3s.pdf Size:218K _fairchild_semi

HUF76639P3, HUF76639S3S Data Sheet December 2001 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.026?, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.027?, VGS = 5V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and SABER Thermal Impedance Models (FLANGE) - www.fairchildsemi.com HUF76639P3 HUF76639S3S • Peak Current vs Pulse Width Curve • UIS Rating Curve Symbol • Switching Time vs RGS Curves D Ordering Information PART NUMBER PACKAGE BRAND G HUF76639P3 TO-220AB 76639P HUF76639S3S TO-263AB 76639S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76639S3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76639P3, HUF76639S3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . .

5.10. huf76419d3s.pdf Size:197K _fairchild_semi

HUF76419D3, HUF76419D3S Data Sheet December 2001 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA • Ultra Low On-Resistance - rDS(ON) = 0.037?, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.043?, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical Models SOURCE - Spice and SABER Thermal Impedance Models HUF76419D3S - www.fairchildsemi.com HUF76419D3 • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Symbol D Ordering Information PART NUMBER PACKAGE BRAND G HUF76419D3 TO-251AA 76419D HUF76419D3S TO-252AA 76419D S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76419D3ST Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF76419D3, HUF76419D3S UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . .

See also transistors datasheet: HUF76132S3S , HUF76132SK8 , HUF76137P3 , HUF76137S3S , HUF76139P3 , HUF76139S3S , HUF76143P3 , HUF76143S3S , IRFP064N , HUF76145S3S , HUF76407D3 , HUF76407D3S , HUF76407DK8 , HUF76407P3 , HUF76409D3 , HUF76409D3S , HUF76409P3 .

Keywords