MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N7057
  2N7057
  2N7057
 
2N7057
  2N7057
  2N7057
 
2N7057
  2N7057
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP22N13GH-HF
AP22T03GH-HF ..AP4224LGM-HF
AP4226AGM ..AP62T03GJ
AP6618GM-HF ..AP9468GJ
AP9468GJ-HF ..AP9972GI-HF
AP9972GP-HF ..APT5019HVR
APT5020BN ..AUIRFI3205
AUIRFIZ34N ..BF256B
BF256C ..BLF6G22L-40P
BLF6G22LS-100 ..BSC084P03NS3EG
BSC084P03NS3G ..BSZ050N03LSG
BSZ050N03MSG ..BUK7507-55B
BUK7508-40B ..BUK9606-55A
BUK9606-55B ..BUZ908
BUZ908D ..CEF08N6A
CEF08N8 ..CEP6186
CEP630N ..DMG4466SSS
DMG4466SSSL ..ECH8655R
ECH8656 ..FDB3632
FDB3632 ..FDD6690A
FDD6760A ..FDMC7696
FDMC7696 ..FDP090N10
FDP090N10 ..FDS4559_F085
FDS4672A ..FDZ391P
FJN598J ..FQD20N06
FQD2N100 ..FQPF85N06
FQPF8N60C ..FRS440R
FRS9130D ..H5N2001LS
H5N2003P ..HAT2064R
HAT2065R ..HUF75329P3
HUF75329S3 ..IPB023N04NG
IPB023N06N3G ..IPD15N06S2L-64
IPD160N04LG ..IPI80N04S3-H4
IPI80N04S4-03 ..IPP90R1K2C3
IPP90R340C3 ..IRF2807ZS
IRF2903Z ..IRF6603
IRF6604 ..IRF7463
IRF7465 ..IRF9543
IRF9610 ..IRFH5025
IRFH5053 ..IRFP150
IRFP150A ..IRFR3707Z
IRFR3707ZC ..IRFS830A
IRFS831 ..IRFW630A
IRFW634A ..IRLB8743
IRLB8748 ..IRLU8259
IRLU8721 ..IXFH20N100P
IXFH20N60 ..IXFK78N50P3
IXFK80N15Q ..IXFR100N25
IXFR102N30P ..IXFX13N100
IXFX140N25T ..IXTA3N60P
IXTA42N15T ..IXTH450P2
IXTH460P2 ..IXTP220N055T
IXTP220N075T ..IXTT24P20
IXTT26N50P ..KF13N50P
KF13N60N ..KMC7D0CN20CA
KMD4D5P30XA ..MCH3374
MCH3375 ..MTB55N03J3
MTB55N03N3 ..MTN2N70FP
MTN2N70I3 ..MTS3572G6
MTW32N20E ..NTD3055L170
NTD40N03R ..NTTFS4824N
NTTFS4928N ..PHW8ND50E
PHW9N60E ..PSMN1R8-30PL
PSMN1R9-25YLC ..RFB18N10CS
RFD10P03L ..RJK0451DPB
RJK0452DPB ..RQK0603CGDQA
RQK0603CGDQS ..SDF150JAB
SDF150NA40HE ..SFW9510
SFW9520 ..SMK0825D
SMK0825D2 ..SML6040AN
SML6040BN ..SPP07N60C3
SPP07N60CFD ..SSH15N55A
SSH15N60 ..SSM5N15FE
SSM5N15FU ..SSS4N80AS
SSS4N90A ..STD12NF06
STD12NF06L ..STE40NK90ZD
STE45N50 ..STK0380D
STK0380F ..STP20NF20
STP20NK50Z ..STP6NK90Z
STP70N10F4 ..STW11NK90Z
STW11NM80 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3458
UT3N01Z ..ZVN2120G
ZVN2535A ..ZXMS6006SG
00000000..ZXMS6006SG
 
2N7057 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7057 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7057

Type of 2N7057 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 13

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7057 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3300

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO218

Equivalent transistors for 2N7057

2N7057 PDF doc:

5.1. 2n705.pdf Size:276K _rca

2N7057
2N7057

5.2. 2n7052_nzt7053_2n7053.pdf Size:314K _fairchild_semi

2N7057
2N7057
Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.5 A Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted S

5.3. 2n7051.pdf Size:27K _fairchild_semi

2N7057
2N7057
2N7051 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current 1.5 A TJ, TSTG Storage Temperature -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min.

See also transistors datasheet: 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 , 2N7055 , IRF150 , 2N7058 , 2N7060 , 2N7061 , 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 .

Keywords

 2N7057 Datasheet  2N7057 Datenblatt  2N7057 RoHS  2N7057 Distributor
 2N7057 Application Notes  2N7057 Component  2N7057 Circuit  2N7057 Schematic
 2N7057 Equivalent  2N7057 Cross Reference  2N7057 Data Sheet  2N7057 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages