MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N7057
  2N7057
  2N7057
 
2N7057
  2N7057
  2N7057
 
2N7057
  2N7057
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRF7805Q
AUIRF9540N ..BF1203
BF1204 ..BLF6G10LS-200RN
BLF6G10LS-260PRN ..BSC042NE7NS3G
BSC046N02KSG ..BSS84AKM
BSS84AKS ..BUK7109-75ATE
BUK714R1-40BT ..BUK9516-75B
BUK9518-30 ..BUZ900X4S
BUZ901 ..CED830G
CED83A3 ..CEP16N10L
CEP20A03 ..DMC2004VK
DMC2020USD ..DMP57D5UV
DMP58D0SV ..FDB050AN06A0
FDB060AN08A0 ..FDD5202P
FDD5353 ..FDMC5614P
FDMC6296 ..FDN361BN
FDN372S ..FDS3572
FDS3580 ..FDT86244
FDT86246 ..FQD10N20L
FQD11P06 ..FQPF33N10
FQPF33N10L ..FRM9240H
FRM9240R ..H07N65F
H10N60E ..HAT2020R
HAT2022R ..HR3N200
HRF3205 ..IPA60R600E6
IPA60R750E6 ..IPD040N03LG
IPD042P03L3G ..IPI60R125CP
IPI60R165CP ..IPP80N04S3-06
IPP80N04S3-H4 ..IRF142
IRF143 ..IRF630NS
IRF630S ..IRF740S
IRF741 ..IRF9395M
IRF9410 ..IRFF024
IRFF110 ..IRFN440
IRFN450 ..IRFR220
IRFR220A ..IRFS650A
IRFS654A ..IRFU9024
IRFU9024N ..IRL620A
IRL620S ..IRLU230A
IRLU2703 ..IXFH14N100Q2
IXFH14N60P ..IXFK44N80Q3
IXFK48N50 ..IXFP22N60P3
IXFP230N075T2 ..IXFV22N50PS
IXFV22N60P ..IXTA240N055T7
IXTA24P085T ..IXTH35N25MA
IXTH35N25MB ..IXTP160N075T
IXTP160N10T ..IXTR40P50P
IXTR48P20P ..JANSR2N7396
JANSR2N7398 ..KMB4D5DN60QA
KMB4D5NP55Q ..KU086N10P
KU2303D ..MTB25A04Q8
MTB25N04J3 ..MTN2306ZN3
MTN2310M3 ..MTP452L3
MTP452M3 ..NTB45N06
NTB45N06L ..NTP5863N
NTP5864N ..PHP6N10E
PHP6N50E ..PSMN069-100YS
PSMN070-200B ..RF1K49223
RF1K49224 ..RJK0397DPA
RJK03A4DPA ..RQJ0202VGDQA
RQJ0203WGDQA ..SDF120JAA-D
SDF120JAA-S ..SFS9Z34
SFT1341 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPI11N60C3
SPI11N60CFD ..SSG4920N
SSG4930N ..SSM3K329R
SSM3K333R ..SSQ6N60
SSR1N50 ..STD10N10LT4
STD10N10T4 ..STD95N4LF3
STD9NM50N ..STI200N6F3
STI21N65M5 ..STP18N10FI
STP18N55M5 ..STP60NF03L
STP60NF06 ..STV36N06
STV3NA80 ..TJ8S06M3L
TK07H90A ..TPC6003
TPC6004 ..TPCA8081
TPCA8082 ..UT2312
UT2316 ..WTL2622
WTM2310A ..ZXMP6A13F
ZXMP6A13G ..ZXMS6006SG
 
2N7057 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7057 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7057

Type of 2N7057 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 13

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7057 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3300

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO218

Equivalent transistors for 2N7057

2N7057 PDF doc:

5.1. 2n705.pdf Size:276K _rca

2N7057
2N7057

5.2. 2n7052_nzt7053_2n7053.pdf Size:314K _fairchild_semi

2N7057
2N7057
Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.5 A Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted S

5.3. 2n7051.pdf Size:27K _fairchild_semi

2N7057
2N7057
2N7051 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current 1.5 A TJ, TSTG Storage Temperature -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min.

See also transistors datasheet: 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 , 2N7055 , IRF150 , 2N7058 , 2N7060 , 2N7061 , 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 .

Keywords

 2N7057 Datasheet  2N7057 Datenblatt  2N7057 RoHS  2N7057 Distributor
 2N7057 Application Notes  2N7057 Component  2N7057 Circuit  2N7057 Schematic
 2N7057 Equivalent  2N7057 Cross Reference  2N7057 Data Sheet  2N7057 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages