MOSFET Datasheet


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2N7057
  2N7057
  2N7057
 
2N7057
  2N7057
  2N7057
 
2N7057
  2N7057
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB2572
FDB2614 ..FDD8876
FDD8878 ..FDMS8622
FDMS86252 ..FDS4672A
FDS4675_F085 ..FKP202
FKP250A ..FQP13N06L
FQP13N10 ..FRE460D
FRE460H ..FSL23AOR
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPB12CNE8NG ..IPD60R600E6
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3717
IRF3805 ..IRF6726M
IRF6727M ..IRF7756G
IRF7759L2 ..IRFB3207ZG
IRFB3256 ..IRFI460
IRFI4905 ..IRFP353
IRFP354 ..IRFS232
IRFS233 ..IRFSL4010
IRFSL4115 ..IRFZ40
IRFZ40FI ..IRLM120A
IRLM210A ..IXBH40N160
IXBH9N140 ..IXFH60N20
IXFH60N20F ..IXFN110N20
IXFN110N60P3 ..IXFR64N60Q3
IXFR66N50Q2 ..IXFX55N50F
IXFX60N55Q2 ..IXTC75N10
IXTC96N25T ..IXTK170N10P
IXTK170P10P ..IXTP64N055T
IXTP6N100D2 ..IXTV230N85TS
IXTV250N075T ..KF7N50F
KF7N50I ..KP737B
KP737G ..MMBF4392L
MMBF4393 ..MTDA0P10FP
MTDA4N20J3 ..MTN6515E3
MTN6515F3 ..NDF04N60Z
NDF04N60Z ..NTGS3441
NTGS3443 ..PH2520U
PH2925U ..PMN27UN
PMN27UP ..PSMN7R6-60PS
PSMN8R0-30YL ..RFP14N05
RFP14N05L ..RJK2055DPA
RJK2057DPA ..RSU002N06
RSU002P03 ..SDF40N50JAM
SDF420 ..SGS150MA010D1
SGS30MA050D1 ..SMK0965F
SMK0965FC ..SML6070AN
SML6070BN ..SPI07N60S5
SPI07N65C3 ..SSG4890N
SSG4902N ..SSM3K315T
SSM3K316T ..SSPS7334N
SSPS922NE ..STB80NF55-08T4
STB80NF55L-06 ..STD7N52K3
STD7NK40Z ..STH250N55F3-6
STH260N6F6-2 ..STM4806
STM4808 ..STP27N3LH5
STP28NM50N ..STP7NA60FI
STP7NK30Z ..STT6802
STT812A ..STW16N65M5
STW16NK60Z ..TK16J55D
TK17A25D ..TPC8049-H
TPC8050-H ..TPCF8201
TPCF8301 ..UT7410
UT75N02 ..ZVP1320A
ZVP1320F ..ZXMS6006SG
 
2N7057 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

2N7057 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N7057

Type of 2N7057 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V: 40

Maximum drain current |Id|, A: 13

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N7057 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3300

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO218

Equivalent transistors for 2N7057

2N7057 PDF doc:

5.1. 2n705.pdf Size:276K _rca

2N7057
2N7057

5.2. 2n7052_nzt7053_2n7053.pdf Size:314K _fairchild_semi

2N7057
2N7057
Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.5 A Operating and Storage Junction Temperature Range -55 to +150 TJ, Tstg C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted S

5.3. 2n7051.pdf Size:27K _fairchild_semi

2N7057
2N7057
2N7051 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25C unless otherwise noted Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current 1.5 A TJ, TSTG Storage Temperature -55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These rtings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Parameter Test Condition Min.

See also transistors datasheet: 2N7008 , 2N7012 , 2N7013 , 2N7014 , 2N7016 , 2N7022 , 2N7054 , 2N7055 , IRF150 , 2N7058 , 2N7060 , 2N7061 , 2N7063 , 2N7064 , 2N7066 , 2N7071 , 2N7072 .

Keywords

 2N7057 Datasheet  2N7057 Datenblatt  2N7057 RoHS  2N7057 Distributor
 2N7057 Application Notes  2N7057 Component  2N7057 Circuit  2N7057 Schematic
 2N7057 Equivalent  2N7057 Cross Reference  2N7057 Data Sheet  2N7057 Fiche Technique

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