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IRC830-007 MOSFET (IC) Datasheet. Cross Reference Search. IRC830-007 Equivalent

Type Designator: IRC830-007

Type of IRC830-007 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 74

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRC830-007 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 610

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: TO220

IRC830-007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRC830-007 PDF doc:

4.1. irc830.pdf Size:222K _international_rectifier

IRC830-007
IRC830-007

See also transistors datasheet: IRC6345 , IRC6405 , IRC6445 , IRC720 , IRC7305 , IRC7405 , IRC820 , IRC830 , IRF630 , IRC830-008 , IRC8305 , IRC830A , IRC832 , IRC832-007 , IRC832-008 , IRC833 , IRC833A .

Search Terms:

 IRC830-007 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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