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IRF1010NS MOSFET (IC) Datasheet. Cross Reference Search. IRF1010NS Equivalent

Type Designator: IRF1010NS

Type of IRF1010NS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 180

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 84

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF1010NS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.011

Package: D2PAK

IRF1010NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1010NS PDF doc:

1.1. irf1010ns.pdf Size:146K _international_rectifier

IRF1010NS
IRF1010NS

PD - 94171 IRF1010NS IRF1010NL Advanced Process Technology HEXFET« Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 55V 175░C Operating Temperature Fast Switching RDS(on) = 11m? Fully Avalanche Rated G Description Advanced HEXFET« Power MOSFETs from ID = 85A International Rectifier utilize advanced processing S techniques to achieve extremely low on-resis

2.1. irf1010n.pdf Size:211K _international_rectifier

IRF1010NS
IRF1010NS

PD - 91278 IRF1010N HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 11m? G Fast Switching Fully Avalanche Rated ID = 85A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.1. irf1010e.pdf Size:195K _international_rectifier

IRF1010NS
IRF1010NS

PD - 91670 IRF1010E HEXFET« Power MOSFET Advanced Process Technology D VDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 12m? G Fast Switching Fully Avalanche Rated ID = 84A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.2. irf1010esl.pdf Size:196K _international_rectifier

IRF1010NS
IRF1010NS

PD - 9.1720 IRF1010ES/L HEXFET« Power MOSFET Advanced Process Technology D VDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175░C Operating Temperature RDS(on) = 0.012? G Fast Switching Fully Avalanche Rated ID = 83A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on

3.3. irf1010z.pdf Size:180K _international_rectifier

IRF1010NS
IRF1010NS

PD - 94652 AUTOMOTIVE MOSFET IRF1010Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 7.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techni

3.4. irf1010es.pdf Size:123K _international_rectifier

IRF1010NS
IRF1010NS

PD - 91720 IRF1010ES IRF1010EL Advanced Process Technology HEXFET« Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) D 175░C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche Rated RDS(on) = 12m? G Description Advanced HEXFET« Power MOSFETs from International ID = 84A Rectifier utilize advanced processing techniques to S achieve extr

See also transistors datasheet: IRCZ445 , IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , CEP83A3 , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 .

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