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IRF1104 MOSFET (IC) Datasheet. Cross Reference Search. IRF1104 Equivalent

Type Designator: IRF1104

Type of IRF1104 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 170

Maximum drain-source voltage |Uds|, V: 40

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 100

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF1104 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.009

Package: TO220AB

IRF1104 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF1104 PDF doc:

1.1. irf1104.pdf Size:101K _international_rectifier

IRF1104
IRF1104

PD- 9.1724A IRF1104 PRELIMINARY HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.009? Fast Switching G Fully Avalanche Rated ID = 100A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

1.2. irf1104s.pdf Size:208K _international_rectifier

IRF1104
IRF1104

PD -91845 IRF1104S/L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Surface Mount (IRF1104S) Low-profile through-hole (IRF1104L) RDS(on) = 0.009? 175░C Operating Temperature G Fast Switching ID = 100A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ac

See also transistors datasheet: IRF044 , IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRFP260 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 .

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 IRF1104 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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