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IRF130 MOSFET (IC) Datasheet. Cross Reference Search. IRF130 Equivalent

Type Designator: IRF130

Type of IRF130 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 45

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF130 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 650

Maximum drain-source on-state resistance (Rds), Ohm: 0.21

Package: TO3

IRF130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF130 PDF doc:

1.1. irf1302.pdf Size:523K _international_rectifier

IRF130
IRF130

PD - 94591 AUTOMOTIVE MOSFET IRF1302 Benefits HEXFET® Power MOSFET ? Advanced Process Technology D ? Ultra Low On-Resistance VDSS = 20V ? Dynamic dv/dt Rating ? 175°C Operating Temperature ? Fast Switching RDS(on) = 4.0m? G ? Repetitive Avalanche Allowed up to Tjmax ID = 180A S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® P

1.2. 2n6756_irf130.pdf Size:147K _international_rectifier

IRF130
IRF130

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET?TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18? 14A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this

5.1. irf1310n.pdf Size:96K _international_rectifier

IRF130
IRF130

PD - 91504A IRF1310N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.036? Fully Avalanche Rated G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co

5.2. irf1310s.pdf Size:182K _international_rectifier

IRF130
IRF130

PD - 9.1221 IRF1310S HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount VDSS = 100V Available in Tape & Reel Dynamic dv/dt Rating RDS(on) = 0.04? Repetitive Avalanche Rated 175°C Operating Temperature ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-

5.3. irf1310ns.pdf Size:156K _international_rectifier

IRF130
IRF130

PD - 91514B IRF1310NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175°C Operating Temperature RDS(on) = 0.036? G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

5.4. irf1312.pdf Size:226K _international_rectifier

IRF130
IRF130

PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 10m? 95A† l Motor Control l Uninterrutible Power Supplies Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See TO-220AB D2Pak TO-262 App. Note AN1001) IRF1312 I

See also transistors datasheet: IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF1405 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 .

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