IRF1310N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1310N

Type of IRF1310N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 160

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 42

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF1310N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.036

Package: TO220AB

Equivalent transistors for IRF1310N

IRF1310N PDF documents for downloads:

1.1. irf1310ns.pdf Size:156K _international_rectifier

PD - 91514B IRF1310NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF1310NS) Low-profile through-hole (IRF1310NL) 175°C Operating Temperature RDS(on) = 0.036? G Fast Switching Fully Avalanche Rated ID = 42A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the Pak TO-262 highest power capability and the lowest possible on- D 2 resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection

1.2. irf1310n.pdf Size:96K _international_rectifier

PD - 91504A IRF1310N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.036? Fully Avalanche Rated G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VG

3.1. irf1310s.pdf Size:182K _international_rectifier

PD - 9.1221 IRF1310S HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount VDSS = 100V Available in Tape & Reel Dynamic dv/dt Rating RDS(on) = 0.04? Repetitive Avalanche Rated 175°C Operating Temperature ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for SMD-220 high current applications because of its low internal connection resistance and can dis

See also transistors datasheet: IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRLR2905 , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRF150 .

Keywords