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P2504EI MOSFET (IC) Datasheet. Cross Reference Search. P2504EI Equivalent

Type Designator: P2504EI

Type of P2504EI transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 42

Maximum drain-source voltage |Uds|, V: 40

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 30

Maximum junction temperature (Tj), °C: 150

Rise Time of P2504EI transistor (tr), nS: 29

Drain-source Capacitance (Cd), pF: 320

Maximum drain-source on-state resistance (Rds), Ohm: 0.0258

Package: TO251

P2504EI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

P2504EI PDF doc:

1.1. p2504ei.pdf Size:499K _unikc

P2504EI
P2504EI

P2504EI P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25.8mΩ @VGS = -10V -40V -30A TO-251 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 TC = 25 ° C -30 ID Continuous Drain Current TC = 70 ° A C -24 IDM -65 Pu

4.1. p2504edg.pdf Size:493K _unikc

P2504EI
P2504EI

P2504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25.8mΩ @VGS = -10V -40V -18A TO-252 100% UIS tested 100% Rg tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 TC = 25 ° C -18 ID Continuous Drain Current TC = 100 ° A

5.1. zxtp25040dfl.pdf Size:390K _diodes

P2504EI
P2504EI

ZXTP25040DFL 40V, SOT23, PNP low power transistor Summary BVCEO > -40V BVECO > -3V IC(cont) = -1.5A VCE(sat) < -115mV @ 1A RCE(sat) = 82m PD = 350mW Complementary part number ZXTN25040DFL Description C Advanced process capability has been used to achieve high current gain hold up making this device ideal for applications requiring high pulse currents. B Features High peak curr

5.2. zxtp25040dz.pdf Size:386K _diodes

P2504EI
P2504EI

ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC(cont) = -3.5A RCE(sat) = 55m VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this d

5.3. zxtp25040dfh.pdf Size:245K _diodes

P2504EI
P2504EI

ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC(CONT) = -3A RCE(sat) = 55 m ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of th

5.4. p2504bdg.pdf Size:487K _unikc

P2504EI
P2504EI

P2504BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25mΩ @VGS = 10V 40V 32A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 TC = 25 ° C 32 ID Continuous Drain Current TC = 100 ° C 20

See also transistors datasheet: PM600BZ , PM606BA , P2503BDG , P2503HEA , P2503HVG , P2503NVG , P2504BDG , P2504EDG , BUZ90A , P2804BDG , P2804BI , P2804BVG , P2804HVG , P2804ND5G , P2804NVG , P2806AT , P2806ATF .

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