MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF1404
  IRF1404
  IRF1404
 
IRF1404
  IRF1404
  IRF1404
 
IRF1404
  IRF1404
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP04N70BI-H-HF
AP04N70BP-A ..AP2451GY-HF
AP2530AGY-HF ..AP4439GM-HF
AP4439GMT-HF ..AP73T02GJ-HF
AP73T03AGH-HF ..AP9575GH-HF
AP9575GI-HF ..AP9T15GH
AP9T15GJ ..APT8067HVR
APT8075BN ..AUIRFS4321
AUIRFS4410Z ..BF994
BF994S ..BLF7G27LS-150P
BLF7G27LS-200PB ..BSL215P
BSL307SP ..BUK203-50Y
BUK204-50Y ..BUK761R8-30C
BUK7620-100A ..BUK9E08-55B
BUK9E3R2-40B ..CEB21A2
CEB3060 ..CEM3060
CEM3083 ..CEU02N65A
CEU02N65G ..DMN3024LSS
DMN3030LSS ..FCA47N60
FCA47N60F ..FDC2612
FDC3512 ..FDG313N
FDG314P ..FDMS3672
FDMS3672 ..FDP6670AL
FDP7030BL ..FDS6930A
FDS6930B ..FMD15-06KC5
FMD15-06KC5 ..FQP12P20
FQP13N06L ..FRE460D
FRE460H ..FSL23AOR
FSL430D ..H7N0312AB
H7N0312LD ..HAT2185WP
HAT2187WP ..HUF76131SK8
HUF76132P3 ..IPB123N10N3G
IPB12CNE8NG ..IPD60R600E6
IPD60R750E6 ..IPP080N03LG
IPP080N06NG ..IRC220
IRC224 ..IRF3808
IRF3808S ..IRF6785
IRF6794M ..IRF7805
IRF7805A ..IRFB3307
IRFB3307Z ..IRFI5210
IRFI530A ..IRFP360LC
IRFP3703 ..IRFS23N20D
IRFS240 ..IRFSL41N15D
IRFSL4227 ..IRFZ44
IRFZ44A ..IRLML0030
IRLML0040 ..IXBJ40N140
IXBJ40N160 ..IXFH60N50P3
IXFH66N20Q ..IXFN130N30
IXFN132N50P3 ..IXFR80N15Q
IXFR80N20Q ..IXFX64N50P
IXFX64N50Q3 ..IXTE250N10
IXTF03N400 ..IXTK180N15
IXTK180N15P ..IXTP6N50P
IXTP70N075T2 ..IXTV26N50P
IXTV26N50PS ..KF7N60F
KF7N60P ..KP739A
KP739B ..MMBF4416
MMBF4416A ..MTDK1S6R
MTDK3S6R ..MTN6515J3
MTN6680Q8 ..NDF05N50Z
NDF06N60Z ..NTGS3455
NTGS4111P ..PHB110NQ08T
PHB11N50E ..PMN34LN
PMN34UN ..PSMN8R0-40PS
PSMN8R2-80YS ..RFP14N06L
RFP15N05L ..RJK2511DPK
RJK2555DPA ..RT1A050ZP
RT1A060AP ..SDF9130JAB
SDF9140 ..SI2300
SI2301 ..SML1004R2KN
SML1004RAN ..SMN01L20Q
SMN01Z30Q ..SSD02N65
SSD04N65 ..SSM3J01T
SSM3J02F ..SSM6L36FE
SSM6L36TU ..STB140NF75
STB141NF55 ..STD35N3LH5
STD35NF06 ..STF30NM50N
STF32N65M5 ..STL50N3LLH5
STL52N25M5 ..STP36N06L
STP36N06LFI ..STP9NK50Z
STP9NK60Z ..STW43NM60ND
STW45NM50 ..TK2A65D
TK2P60D ..TPC8086
TPC8087 ..TPCP8105
TPCP8106 ..UTN3055
UTP45N02 ..ZXM64P02X
ZXM64P035L3 ..ZXMS6006SG
 
IRF1404 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF1404 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1404

Type of IRF1404 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 40

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 162

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF1404 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 7360

Maximum drain-source on-state resistance (Rds), Ohm: 0.004

Package: TO220AB

Equivalent transistors for IRF1404

IRF1404 PDF doc:

1.1. irf1404l.pdf Size:306K _international_rectifier

IRF1404
IRF1404
PD -93853C IRF1404S IRF1404L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

1.2. irf1404.pdf Size:107K _international_rectifier

IRF1404
IRF1404
PD -91896E IRF1404 HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID

1.3. irf1404s.pdf Size:139K _international_rectifier

IRF1404
IRF1404
PD -93853B IRF1404S IRF1404L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

1.4. irf1404z.pdf Size:181K _international_rectifier

IRF1404
IRF1404
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25░C 190 Continuous Drain Current, VGS @ 10V ID @ TC = 100░C 130 A Continuous Drain Current, VGS

See also transistors datasheet: IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , STP75NF75 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 .

Keywords

 IRF1404 Datasheet  IRF1404 Datenblatt  IRF1404 RoHS  IRF1404 Distributor
 IRF1404 Application Notes  IRF1404 Component  IRF1404 Circuit  IRF1404 Schematic
 IRF1404 Equivalent  IRF1404 Cross Reference  IRF1404 Data Sheet  IRF1404 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages