MOSFET Datasheet


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IRF1404
  IRF1404
  IRF1404
 
IRF1404
  IRF1404
  IRF1404
 
IRF1404
  IRF1404
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTK6679
WTK6680 ..ZXMP3F35N8
ZXMP3F36N8 ..ZXMS6006SG
 
IRF1404 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF1404 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1404

Type of IRF1404 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 40

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 162

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF1404 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 7360

Maximum drain-source on-state resistance (Rds), Ohm: 0.004

Package: TO220AB

Equivalent transistors for IRF1404

IRF1404 PDF doc:

1.1. irf1404s.pdf Size:139K _international_rectifier

IRF1404
IRF1404
PD -93853B IRF1404S IRF1404L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

1.2. irf1404z.pdf Size:181K _international_rectifier

IRF1404
IRF1404
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25░C 190 Continuous Drain Current, VGS @ 10V ID @ TC = 100░C 130 A Continuous Drain Current, VGS

1.3. irf1404.pdf Size:107K _international_rectifier

IRF1404
IRF1404
PD -91896E IRF1404 HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID

1.4. irf1404l.pdf Size:306K _international_rectifier

IRF1404
IRF1404
PD -93853C IRF1404S IRF1404L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

See also transistors datasheet: IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , STP75NF75 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 .

Keywords

 IRF1404 Datasheet  IRF1404 Datenblatt  IRF1404 RoHS  IRF1404 Distributor
 IRF1404 Application Notes  IRF1404 Component  IRF1404 Circuit  IRF1404 Schematic
 IRF1404 Equivalent  IRF1404 Cross Reference  IRF1404 Data Sheet  IRF1404 Fiche Technique

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