MOSFET Datasheet


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IRF1404
  IRF1404
  IRF1404
 
IRF1404
  IRF1404
  IRF1404
 
IRF1404
  IRF1404
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
APT6010B2LL ..AUIRFL024N
AUIRFP064N ..BF351
BF352 ..BLF6G22LS-180RN
BLF6G22LS-40P ..BSC0908NS
BSC0909NS ..BSZ067N06LS3G
BSZ076N06NS3G ..BUK7509-55A
BUK7509-75A ..BUK9608-55
BUK9608-55A ..BUZ908P
BUZ90A ..CEF10N4
CEF10N6 ..CEP730G
CEP73A3G ..DMG4468LK3
DMG4496SSS ..ECH8659
ECH8660 ..FDB3652_F085
FDB3672_F085 ..FDD6778A
FDD6780A ..FDMC8026S
FDMC8026S ..FDP100N10
FDP10N60NZ ..FDS4685
FDS4897AC ..FK10KM-10
FK10KM-12 ..FQD2N60C
FQD2N80 ..FQPF8N60CF
FQPF8N60CF ..FRS9130R
FRS9140D ..H5N2004DS
H5N2005DL ..HAT2070R
HAT2071R ..HUF75329S3ST
HUF75332G3 ..IPB025N10N3G
IPB027N10N3G ..IPD170N04NG
IPD180N10N3G ..IPI80N04S4L-04
IPI80N06S2-07 ..IPP90R800C3
IPS0151S ..IRF2903ZS
IRF2907Z ..IRF6608
IRF6609 ..IRF7469
IRF7470 ..IRF9612
IRF9613 ..IRFH5110
IRFH5204 ..IRFP150V
IRFP151 ..IRFR3711Z
IRFR3711ZC ..IRFS841
IRFS842 ..IRFW730A
IRFW740A ..IRLBA3803P
IRLBL1304 ..IRLW510A
IRLW520A ..IXFH21N50F
IXFH21N50Q ..IXFK80N60P3
IXFK88N20Q ..IXFR140N30P
IXFR14N100Q2 ..IXFX160N30T
IXFX16N90 ..IXTA48P05T
IXTA4N60P ..IXTH50N20
IXTH50N25T ..IXTP22N50PM
IXTP230N075T2 ..IXTT30N50P
IXTT30N60L2 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..MCH3475
MCH3476 ..MTB60A06Q8
MTB60B06Q8 ..MTN3055L3
MTN3055M3 ..NCV8405
NCV8406 ..NTD4808N
NTD4809N ..NTTFS4939N
NTTFS4941N ..PHX3N60E
PHX4N60E ..PSMN2R2-25YLC
PSMN2R2-30YLC ..RFD14N05L
RFD14N05LSM ..RJK0629DPE
RJK0629DPK ..RQK0608BQDQS
RQK0609CQDQS ..SDF1NA60JDA
SDF200NA10HE ..SFW9620
SFW9624 ..SMK0860P
SMK0870F ..SML6060AN
SML6060BN ..SPP08P06PH
SPP11N60C3 ..SSH20N50
SSH20N50A ..SSM5P16FE
SSM5P16FU ..SSS6N60
SSS6N70A ..STD150N3LLH6
STD155N3H6 ..STE53NC50
STE70NM50 ..STK14N05
STK14N06 ..STP20NM60FP
STP20NM65N ..STP75NF68
STP75NF75 ..STW12NK60Z
STW12NK80Z ..TK13A25D
TK13A45D ..TPC8013-H
TPC8014 ..TPCC8008
TPCC8009 ..UT40N03T
UT40N04 ..ZVN3320A
ZVN3320F ..ZXMS6006SG
 
IRF1404 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF1404 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF1404

Type of IRF1404 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 40

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 162

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF1404 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 7360

Maximum drain-source on-state resistance (Rds), Ohm: 0.004

Package: TO220AB

Equivalent transistors for IRF1404

IRF1404 PDF doc:

1.1. irf1404l.pdf Size:306K _international_rectifier

IRF1404
IRF1404
PD -93853C IRF1404S IRF1404L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

1.2. irf1404.pdf Size:107K _international_rectifier

IRF1404
IRF1404
PD -91896E IRF1404 HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID

1.3. irf1404s.pdf Size:139K _international_rectifier

IRF1404
IRF1404
PD -93853B IRF1404S IRF1404L HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak TO-262 D2Pak is suitable for high current applications because of IRF1404S IRF1404L its lo

1.4. irf1404z.pdf Size:181K _international_rectifier

IRF1404
IRF1404
PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25░C 190 Continuous Drain Current, VGS @ 10V ID @ TC = 100░C 130 A Continuous Drain Current, VGS

See also transistors datasheet: IRF1010NL , IRF1010NS , IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , STP75NF75 , IRF141 , IRF142 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 .

Keywords

 IRF1404 Datasheet  IRF1404 Datenblatt  IRF1404 RoHS  IRF1404 Distributor
 IRF1404 Application Notes  IRF1404 Component  IRF1404 Circuit  IRF1404 Schematic
 IRF1404 Equivalent  IRF1404 Cross Reference  IRF1404 Data Sheet  IRF1404 Fiche Technique

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