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IRF150 MOSFET (IC) Datasheet. Cross Reference Search. IRF150 Equivalent

Type Designator: IRF150

Type of IRF150 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 38

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF150 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 3700

Maximum drain-source on-state resistance (Rds), Ohm: 0.055

Package: TO3

IRF150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF150 PDF doc:

1.1. irf150-1-2-3.pdf Size:380K _st2

IRF150
IRF150

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1.2. irf1503.pdf Size:552K _international_rectifier

IRF150
IRF150

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET« Power MOSFET ? 14V Automotive Electrical Systems D ? 14V Electronic Power Steering VDSS = 30V Features ? Advanced Process Technology RDS(on) = 3.3m? ? Ultra Low On-Resistance G ? 175░C Operating Temperature ? Fast Switching ID = 75A S ? Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for

1.3. irf150.pdf Size:150K _international_rectifier

IRF150
IRF150

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET?TRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055? 38A The HEXFET?technology is the key to International Rectifierĺs advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

See also transistors datasheet: IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 , IRFZ24N , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S .

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