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PE5A1BA MOSFET (IC) Datasheet. Cross Reference Search. PE5A1BA Equivalent

Type Designator: PE5A1BA

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd), W: 20

Maximum Drain-Source Voltage |Vds|, V: 20

Maximum Gate-Source Voltage |Vgs|, V: 8

Maximum Drain Current |Id|, A: 43

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS: 53

Drain-Source Capacitance (Cd), pF: 551

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.0065

Package: PDFN3X3P

PE5A1BA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

PE5A1BA PDF doc:

1.1. pe5a1ba.pdf Size:880K _unikc

PE5A1BA
PE5A1BA

PE5A1BA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 6.5mΩ @VGS = -4.5V -20V -43A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 TC = 25 ° C -43 TC = 100 ° C -27 ID Continuous Drain Current4 TA = 25

See also transistors datasheet: PA610AD , PA610ATF , PA610DD , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , IRFZ44 , PE5G6EA , PK5A1BA , PK5C8EA , PK5G6EA , PB210BC , PB210BD , PB210BI , PB210BM .

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