MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF3205
  IRF3205
  IRF3205
 
IRF3205
  IRF3205
  IRF3205
 
IRF3205
  IRF3205
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP02N60J
AP02N60J-H ..AP2310AGN-HF
AP2310CGN-HF ..AP4416GH
AP4417GH ..AP6903GH-HF
AP6904GH-HF ..AP9560GS-HF
AP9561AGH-HF ..AP9977GM
AP9978AGP-HF ..APT6015JVR
APT6015LVR ..AUIRFR2307Z
AUIRFR2405 ..BF900
BF901 ..BLF6G38-50
BLF6G38LS-100 ..BSC152N10NSFG
BSC159N10LSFG ..BSZ180P03NS3EG
BSZ180P03NS3G ..BUK7528-55A
BUK752R3-40C ..BUK9620-55
BUK9620-55A ..CEB02N7G
CEB02N9 ..CEF85N75
CEFF634 ..CEPF640
CES2301 ..DMN2004K
DMN2004TK ..EMH2408
EMH2409 ..FDB7030L
FDB7045L ..FDD8451
FDD8453LZ ..FDMC86520L
FDMC8878 ..FDP22N50N
FDP24N40 ..FDS6614A
FDS6630A ..FK16SM-5
FK16SM-6 ..FQD6N50C
FQD7N10L ..FQT4N25
FQT5P10 ..FS3KM-10
FSF055D ..H5N2522LS
H5N2801P ..HAT2129H
HAT2131R ..HUF75345G3
HUF75345P3 ..IPB054N06N3G
IPB054N08N3G ..IPD30N08S2L-21
IPD30N10S3L-34 ..IPP015N04NG
IPP023N04NG ..IPW50R199CP
IPW50R250CP ..IRF350
IRF3515L ..IRF6637
IRF6638 ..IRF750A
IRF7521D1 ..IRF9Z10
IRF9Z12 ..IRFH7932
IRFH7934 ..IRFP245
IRFP250 ..IRFR9012
IRFR9014 ..IRFS9521
IRFS9522 ..IRFY340C
IRFY430 ..IRLI3803
IRLI510A ..IRLZ24NS
IRLZ30 ..IXFH28N50F
IXFH28N50Q ..IXFL60N60
IXFL60N80P ..IXFR24N50Q
IXFR24N80P ..IXFX24N90Q
IXFX250N10P ..IXTA76N25T
IXTA76P10T ..IXTH6N120
IXTH6N150 ..IXTP32N20T
IXTP32P05T ..IXTT72N20
IXTT74N20P ..KF3N80F
KF3N80I ..KP504D
KP504E ..MCH6444
MCH6445 ..MTBA6C12J4
MTBB0P10J3 ..MTN3820F3
MTN3820J3 ..NDB6050
NDB6050L ..NTD4965N
NTD4969N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF320JDA
SDF340JAA ..SGSP222
SGSP230 ..SMK1430DI
SMK1430F ..SML60S18
SML60T38 ..SPP24N60C3
SPP24N60CFD ..SSH60N06
SSH60N06A ..SSM6J412TU
SSM6J501NU ..SSU2N60A
SSU3055A ..STD17N06L
STD17N06L-1 ..STF12NK65Z
STF12NM50ND ..STK4N30
STK4N30L ..STP25N06
STP25N06FI ..STP80N20M5
STP80N70F4 ..STW17N62K3
STW18NM60N ..TK15A60U
TK15D60U ..TPC8036-H
TPC8037-H ..TPCF8001
TPCF8002 ..UT60N03
UT60T03 ..ZVN4525Z
ZVNL110A ..ZXMS6006SG
 
IRF3205 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF3205 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF3205

Type of IRF3205 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 98

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF3205 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220AB

Equivalent transistors for IRF3205

IRF3205 PDF doc:

1.1. irf3205z.pdf Size:181K _international_rectifier

IRF3205
IRF3205
PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25░C 110 Continuous Drain Current, VGS @ 10V ID @ TC = 100░C 78 A Continuous Drain Current, VGS @

1.2. irf3205.pdf Size:92K _international_rectifier

IRF3205
IRF3205
PD-91279E IRF3205 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C

1.3. irf3205_.pdf Size:97K _international_rectifier

IRF3205
IRF3205
PD-91279E IRF3205 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C

1.4. irf3205s.pdf Size:160K _international_rectifier

IRF3205
IRF3205
PD - 94149 IRF3205S/L HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface D2Pak TO-262 mount package. The D2Pak is suitable for high current applications IRF3205S IRF3205L because of its low internal connection

See also transistors datasheet: IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRFP250N , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

Keywords

 IRF3205 Datasheet  IRF3205 Datenblatt  IRF3205 RoHS  IRF3205 Distributor
 IRF3205 Application Notes  IRF3205 Component  IRF3205 Circuit  IRF3205 Schematic
 IRF3205 Equivalent  IRF3205 Cross Reference  IRF3205 Data Sheet  IRF3205 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages