MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF3205
  IRF3205
  IRF3205
 
IRF3205
  IRF3205
  IRF3205
 
IRF3205
  IRF3205
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT6013JVR
APT6015B2VR ..AUIRFR1010Z
AUIRFR1018E ..BF861B
BF861C ..BLF6G38-100
BLF6G38-10G ..BSC12DN20NS3G
BSC130P03LSG ..BSZ160N10NS3G
BSZ165N04NSG ..BUK7526-100B
BUK7528-100A ..BUK9618-55A
BUK96180-100A ..CEB02N65A
CEB02N65G ..CEF830G
CEF840A ..CEP9060N
CEP93A3 ..DMG9933USD
DMN100 ..EMH1307
EMH1405 ..FDB6035L
FDB603AL ..FDD8445
FDD8445_F085 ..FDMC86244
FDMC86324 ..FDP19N40
FDP19N40 ..FDS6574A
FDS6575 ..FK14VS-10
FK14VS-9 ..FQD5P20
FQD6N25 ..FQT1N80
FQT3P20 ..FRX130R2
FRX130R3 ..H5N2510DS
H5N2514P ..HAT2114R
HAT2116H ..HUF75343S3S
HUF75344G3 ..IPB049NE7N3G
IPB050N06NG ..IPD30N06S2L-13
IPD30N06S2L-23 ..IPI90R800C3
IPL60R199CP ..IPU103N08N3G
IPU135N03LG ..IRF340
IRF3415 ..IRF6633
IRF6633A ..IRF7507(P)
IRF7509 ..IRF9952Q
IRF9953 ..IRFH7911
IRFH7914 ..IRFP244A
IRFP245 ..IRFR9010
IRFR9012 ..IRFS9520
IRFS9521 ..IRFY340
IRFY340C ..IRLI3705N
IRLI3803 ..IRLZ24NL
IRLZ24NS ..IXFH26N60Q
IXFH28N50F ..IXFL44N80
IXFL60N60 ..IXFR24N50
IXFR24N50Q ..IXFX24N100F
IXFX24N90Q ..IXTA76N075T
IXTA76N25T ..IXTH6N100D2
IXTH6N120 ..IXTP30N10MB
IXTP32N20T ..IXTT72N10
IXTT72N20 ..KF3N80D
KF3N80F ..KP504B
KP504D ..MCH6437
MCH6444 ..MTBA5Q10Q8
MTBA6C12J4 ..MTN3607F3
MTN3820F3 ..NDB603AL
NDB6050 ..NTD4963N
NTD4965N ..NVD5862N
NVD5863NL ..PMBFJ109
PMBFJ110 ..PSMN3R5-80PS
PSMN3R7-25YLC ..RFD3055
RFD3055LE ..RJK1008DPE
RJK1008DPN ..RSC002P03
RSD050N06 ..SDF320JAB
SDF320JDA ..SGSP201
SGSP222 ..SMK1360FD
SMK1430DI ..SML60S16
SML60S18 ..SPP21N50C3
SPP24N60C3 ..SSH5N90A
SSH60N06 ..SSM6J410TU
SSM6J412TU ..SSU1N60A
SSU2N60A ..STD17N06-1
STD17N06L ..STF12NK60Z
STF12NK65Z ..STK4N25
STK4N30 ..STP25N05FI
STP25N06 ..STP7NM80
STP80N20M5 ..STW16NK60Z
STW17N62K3 ..TK15A60D
TK15A60U ..TPC8035-H
TPC8036-H ..TPCC8A01-H
TPCF8001 ..UT5504
UT60N03 ..ZVN4525G
ZVN4525Z ..ZXMS6006SG
 
IRF3205 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF3205 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF3205

Type of IRF3205 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 55

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 98

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF3205 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.008

Package: TO220AB

Equivalent transistors for IRF3205

IRF3205 PDF doc:

1.1. irf3205z.pdf Size:181K _international_rectifier

IRF3205
IRF3205
PD - 94653 AUTOMOTIVE MOSFET IRF3205Z HEXFET« Power MOSFET Features D ? Advanced Process Technology VDSS = 55V ? Ultra Low On-Resistance ? 175░C Operating Temperature RDS(on) = 6.5m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175░C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25░C 110 Continuous Drain Current, VGS @ 10V ID @ TC = 100░C 78 A Continuous Drain Current, VGS @

1.2. irf3205.pdf Size:92K _international_rectifier

IRF3205
IRF3205
PD-91279E IRF3205 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C

1.3. irf3205_.pdf Size:97K _international_rectifier

IRF3205
IRF3205
PD-91279E IRF3205 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal TO-220AB resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25░C

1.4. irf3205s.pdf Size:160K _international_rectifier

IRF3205
IRF3205
PD - 94149 IRF3205S/L HEXFET« Power MOSFET Advanced Process Technology D VDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 8.0m? G Fast Switching Fully Avalanche Rated ID = 110A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface D2Pak TO-262 mount package. The D2Pak is suitable for high current applications IRF3205S IRF3205L because of its low internal connection

See also transistors datasheet: IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRFP250N , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 .

Keywords

 IRF3205 Datasheet  IRF3205 Datenblatt  IRF3205 RoHS  IRF3205 Distributor
 IRF3205 Application Notes  IRF3205 Component  IRF3205 Circuit  IRF3205 Schematic
 IRF3205 Equivalent  IRF3205 Cross Reference  IRF3205 Data Sheet  IRF3205 Fiche Technique

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