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IRF330 MOSFET (IC) Datasheet. Cross Reference Search. IRF330 Equivalent

Type Designator: IRF330

Type of IRF330 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF330 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 620

Maximum drain-source on-state resistance (Rds), Ohm: 1.2

Package: TO3

IRF330 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF330 PDF doc:

1.1. 2n6760_irf330.pdf Size:146K _international_rectifier

IRF330
IRF330

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00? 5.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.1. irf3315s.pdf Size:197K _international_rectifier

IRF330
IRF330

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

5.2. irf3315.pdf Size:124K _international_rectifier

IRF330
IRF330

PD -91623A APPROVED IRF3315 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175°C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

5.3. irf3315l.pdf Size:197K _international_rectifier

IRF330
IRF330

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

5.4. irf3315sl.pdf Size:205K _international_rectifier

IRF330
IRF330

PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

See also transistors datasheet: IRF240 , IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRFZ44A , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 .

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