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IRF3315 MOSFET (IC) Datasheet. Cross Reference Search. IRF3315 Equivalent

Type Designator: IRF3315

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 94

Maximum Drain-Source Voltage |Vds|, V: 150

Maximum Gate-Source Voltage |Vgs|, V: 10

Maximum Drain Current |Id|, A: 21

Maximum Junction Temperature (Tj), ┬░C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.082

Package: TO220AB

IRF3315 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3315 PDF doc:

1.1. irf3315s.pdf Size:197K _international_rectifier

IRF3315
IRF3315

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175░C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

1.2. irf3315.pdf Size:124K _international_rectifier

IRF3315
IRF3315

PD -91623A APPROVED IRF3315 HEXFET« Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175░C Operating Temperature Fast Switching RDS(on) = 0.07? Fully Avalanche Rated G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This bene

1.3. irf3315l.pdf Size:197K _international_rectifier

IRF3315
IRF3315

PD - 9.1617A IRF3315S/L PRELIMINARY HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175░C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

1.4. irf3315sl.pdf Size:205K _international_rectifier

IRF3315
IRF3315

PD - 9.1617B IRF3315S/L PRELIMINARY HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF3315S) VDSS = 150V Low-profile through-hole (IRF3315L) 175░C Operating Temperature Fast Switching RDS(on) = 0.082? G Fully Avalanche Rated ID = 21A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

See also transistors datasheet: IRF250 , IRF2807 , IRF2807L , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRFP260N , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S .

Search Terms:

 IRF3315 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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