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IRF3415L MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF3415L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 43 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: TO262

IRF3415L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3415L PDF doc:

3.1. irf3415.pdf Size:94K _international_rectifier

IRF3415L
IRF3415L

PD - 91477D IRF3415 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 150V 175°C Operating Temperature Fast Switching RDS(on) = 0.042? Fully Avalanche Rated G Description ID = 43A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

3.2. irf3415s.pdf Size:156K _international_rectifier

IRF3415L
IRF3415L

PD - 91509C IRF3415S/L HEXFET® Power MOSFET Advanced Process Technology D VDSS = 150V Surface Mount (IRF3415S) Low-profile through-hole (IRF3415L) 175°C Operating Temperature RDS(on) = 0.042? Fast Switching G Fully Avalanche Rated ID = 43A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r

5.1. irf340.pdf Size:145K _international_rectifier

IRF3415L
IRF3415L

PD - 90371 REPETITIVE AVALANCHE AND dv/dt RATED IRF340 400V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF340 400V 0.55? 10A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very l

Datasheet: IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , 2N3824 , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 .

 


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