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IRF350 MOSFET (IC) Datasheet. Cross Reference Search. IRF350 Equivalent

Type Designator: IRF350

Type of IRF350 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF350 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2600

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO3

IRF350 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF350 PDF doc:

1.1. irf350.pdf Size:341K _st2

IRF350
IRF350

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1.2. 2n6768_irf350.pdf Size:144K _international_rectifier

IRF350
IRF350

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET?TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300? 14A The HEXFET?technology is the key to International Rectifierĺs advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

5.1. irf3515s.pdf Size:126K _international_rectifier

IRF350
IRF350

PD- 91899B IRF3515S SMPS MOSFET IRF3515L HEXFET« Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045? 41A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cu

See also transistors datasheet: IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , SPA11N60C3 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 .

Search Terms:

 IRF350 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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