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IRF360 MOSFET (IC) Datasheet. Cross Reference Search. IRF360 Equivalent

Type Designator: IRF360

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 300

Maximum Drain-Source Voltage |Vds|, V: 400

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 25

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF: 4200

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.23

Package: TO3

IRF360 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF360 PDF doc:

1.1. irf360.pdf Size:139K _international_rectifier

IRF360
IRF360

PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED IRF360 400V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20? 25A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very l

See also transistors datasheet: IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRLR2905 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 .

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